Power Electronics

POWER ELECTRONICS POWER ELECTRONICS
INTRODUCTION TO POWER ELECTRONICS

Dr. Adel Gastli
Email: adel@gastli.net http://adel.gastli.net
CONTENTS
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. Definitions and History Applications of Power Electronics Power Semiconductor Devices Control characteristics of power devices Characteristics & specifications of switches Design of power electronics equipment Rms values of waveforms Types of power electronic circuits Peripheral effects Power modules Intelligent modules Journals & References
Power Electronics: Introduction 2
Dr. Adel Gastli
DEFINITION & HISTORY

Power electronics refers to control and conversion of electrical power by power semiconductor devices wherein these devices operate as switches. Advent of Silicon-Controlled Rectifiers, abbreviated as SCRs, led to the development of a new area of application called the Power Electronics.
Dr. Adel Gastli Power Electronics: Introduction 3
Prior to the introduction of SCRs, mercuryarc rectifiers (1900) were used for controlling electrical power, but such rectifier circuits were part of industrial electronics and the scope for applications of mercury-arc rectifiers was limited. Once the SCRs were available (1957), the application area spread to many fields such as drives, power supplies, aviation electronics, high frequency inverters and power electronics originated.
APPLICATIONS OF POWER ELECTRONICS

Power electronics has applications that span the whole field of electrical power systems, with the power range of these applications extending from a few VA/Watts to several MVA/MW. The main task of power electronics is to control and convert electrical power from one form to another form.
Power electronics is a subject of interdisciplinary nature.
Power Control Analog|Digital
Electronics Devices|Circuits
Power Equipment Static|Rotating Electronics
Dr. Adel Gastli
Power Electronics: Introduction
Some Applications of Power Electronics

Adverting Air conditioning Aircraft power supplies Alarms Household Appliances Battery charger Chemical processing Computers Cranes, hoists, elevators Dimmers Displays Electric door openers Electric dryers, fans
Dr. Adel Gastli
Electric vehicles & traction Electromagnets Gas turbine starting Generator exciters High voltage dc (HVDC) Motor drives Movie projector Oil well drilling Paper mills Photograph, photocopy machines TV, Radio, VCR Solar power supplies, etc
POWER SEMICONDUCTOR DEVICES

Since the first thyristor (SCR) was developed in late 1957, there has been tremendous advances in the power semiconductor devices. Since 1970 various types of power semiconductor devices were developed and became commercially available.
Dr. Adel Gastli
Power semiconductor devices are made of either silicon or silicon carbide. These devices can be divided broadly into three main types:
Power diodes Thyristors Transistors
Dr. Adel Gastli
10
Classification of power semiconductors

Power Diodes
General purpose
Rating up to 6000V, 4500A
High speed (or fast recovery)

Rating up to 6000V, 1100A Reverse recovery time 0.1 to 5s Essential for high-frequency switching
Dr. Adel Gastli
12
Power Diodes (cont.)

Schottky
Low on-state voltage Very small recover time (typically nanoseconds). Leakage current increases with voltage rating Rating limited to 100V, 300A
Dr. Adel Gastli
13
Power Diodes (cont.)

Anode Cathode 2 terminals
Conducts when its anode voltage is higher then that of the cathode (VA > VC) Forward voltage drop (when on) is very low (typically 0.5 and 1.2V) If VC > VA the diode is said to be in blocking mode.
Stud-mounted type
Disk, press pak, or hokey puck type
Dr. Adel Gastli
15
Thyristors
Anode Gate Cathode 3 terminals
When a small current is passed through the gate terminal to cathode, the thyristor conducts provided that the anode terminal is at higher potential than that of the cathode:
iG >0 VA > VC
Thyristors (Cont.)
Once a Thyristor is in a conduction mode, the gate circuit has no control and the thyristor continues to conduct. In conduction mode, forward voltage is very small (0.5 to 2 V). Thyristor can be turned off by making VAC 0V
Line-commutated thyristors are turned off due to the sinusoidal nature of their input voltage Forced-commutated thyristors are turned off by an extra circuit called commutation circuitry.
Dr. Adel Gastli
17
Thyristors (Cont.)
Natural or line-commutated thyristors are available with rating up to 6000 V, 4500A. Turn-off-time became very small (10 to 20 s in 3000 V, 3600A).
ti=0
Turn-off-time
tVAC0
Instant when the principle current has decreased to zero after external switching of the principle voltage circuit
Dr. Adel Gastli
Instant when thyristor is capable of supporting a specified voltage without turning on.
18
Thyristors (Cont.)
Can be subdivided into 11 types:
1. 2. 3. 4. Forced-commutated Line-commutated Gate-Turn-Off (GTO) Reverse Conducting Thyristor (RCT) 5. Static Induction Thyristor (SITH) 6. Gate-Assisted turn off Thyristor (GATT)
Dr. Adel Gastli
7. Light-activated Silicon-Controlled Rectifier (LASCR) 8. MOS Turn-Off (MTO) 9. Emitter Turn-Off (ETO) 10. Integrated GateCommutated Thyristor (IGCT) 11. MOS Controlled Thyristors (MCTs)
19
Self-Study
(Outcome i: a recognition of the need for, and an ability to engage in life-long learning)
Page 8: main characteristics and applications of different types of thyristors.
Dr. Adel Gastli
20
Power Transistors
There are 4 types:
Bipolar Junction Transistors (BJTs) Power MOSFETS Insulated-Gate Bipolar Transistors (IGBTs) Static Induction Transistors (SITs)
Dr. Adel Gastli
21
Power Transistors (Cont.)

Bipolar Junction Transistors (BJTs)
NPN-BJT B IB C IC IC IB1 saturation IB2 VCE IBn IBn> IB1
Operates like a switch (on-off)
IE
Used in power converters at frequency below 10 kHz Power ratings up to 1200V, 400A. VBE> 0, IB >ITH conduction (on) mode VBE< 0, IB <ITH nonconduction (off) mode

Power MOSFETs
N-channel G S 0 D ID ID VGS0 VGS1> VGSn VGSn VDS
Used in high-speed power converters at frequency range of several tens of kHz. Power ratings up to 1000V, 100A (relatively low power ratings).
Dr. Adel Gastli
23

IGBTs
C G E IE 0 IC IC VT VGEn VGEn> VGE1 VGE1 VCE
Voltage controlled power transistors (better drive circuit) faster than BJTs but slower than MOSFETs. Used in power converters at frequency up to 20 kHz Power ratings up to 1700V, 2400A (high voltage high current).
Dr. Adel Gastli
24

SITs
D G S IS 0 ID ID VGSn VGS1=0V VGSn> VGS1
VDS
Used in high-power high frequency applications (audio, VHF/UHF, and microwave amplifiers) Power ratings up to 1200V, 300A. Has low-noise, low-distortion, high-audio-frequency power capability. Very short turn-on and turn-off times (typically 0.25s) On-characteristic and high on-state drop limit its applications for general power conversions.
Power ranges of commercially available power semiconductor devices

V [V] 12000 7500 6000 5500
6500V/600A (Eupec) 12000V/1500A (Mitsubishi) 7500V/1650A (Eupec) 6500V/2650A (ABB) 5500V/2300A (ABB)
SCR (Market)
IGBT (Market) IGCT (Market)
GTO (Market)
6000V/6000A GTO (Mitsubishi) 6000V/6000A IGCT (Mitsubishi announced) 4800V/5000A (Westcode)
1000 Power MOSFET (Market)
4500V/4000A (Mitsubishi)
200 100
1000 V/100A (SanRex)
60 V/1000A (Semikron)
100 Dr. Adel Gastli
200
500
1000 2400 4000 6000 10000 I [A] 26
Dr. Adel Gastli
27
CONTROL CHARACTERISTICS OF POWER DEVICES

Thyristor switch
1
Gate signal vG
vG
0
+ Input voltage Vs _
Thyristor
+ Output voltage v0 _
-1
Vs
v0
First pulse turns it on and stays always on
Dr. Adel Gastli
28
GTO/MTO/ETO/IGCT/MCT/SITH switch
SITH
A + vG
_
Polarity of vG is reversed for MCT
vG
1 0 -1
+ A Input voltage Vs A _
GTO MCT
R
K G
Vs
v0
t1 T t
Positive pulse turns them on and negative pulse turns them off
Dr. Adel Gastli
29
BJT/MOSFET/IGBT switch
+ Input voltage Vs _ C G + D Input voltage Vs _ S
vGS +
vB +
vB/vGS
1 0 t1 T t
Vs
v0
t1 T t
Positive voltage turns them on and zero voltage turns them off
Classification
1. Uncontrolled turn on and turn off (e.g. diode) 2. Controlled turn on and uncontrolled turn off (e.g. SCR) 3. Controlled turn on and off (e.g. BJT, MOSFET, IGBT, GTO, SITH, SIT, MCT) 4. Continuous gate signal requirement (e.g. BJT, MOSFET, IGBT, SIT) 5. Pulse gate requirement (e.g. SCR, GTO,MCT) 6. Bipolar voltage-withstanding capability (e.g. SCR, GTO) 7. Unipolar voltage-withstanding capability (e.g. BJT, MOSFET,GTO, IGBT, MCT) 8. Bidirectional current capability (e.g. TRIAC, RCT) 9. Unidirectional current capability (e.g. SCR, GTO, BJT, MOSFET, MCT,IGBT, SITH, SIT, Diode)
(See Table 1.4 page 15 of the textbook)
CHARACTERISTICS & SPECIFICATIONS OF SWITCHES

Ideal Switch
On state:
carry high forward current, IF= Low forward voltage drop, VON=0 low on-state resistance, RON=0
Turn-on & turn-off processes:

Controllable
Must turn on with gate signal (e.g. positive) Must turn off with another gate signal (e.g. zero or negative)
Off state:
High forward or reverse voltage, VBR = Low off-state leak current, IOFF=0 High off-state resistance, ROFF= (low off-state power losses)
Instantaneous (high frequency)

Low delay time, td=0 Low rise time, tr=0 Low storage time, ts=0 Low fall time, tf=0
Requires very low thermal impedance from internal junction to ambient, RJA=0, so that it transmits heat easily to the ambient Must have high i2t, to sustain any fault current for a long time.
Device must be capable of handling rapid voltage changes across it, dv/dt= Device must be capable of handling rapid current changes across it, di/dt=
32
Low gate-drive power, PG=0 Low gate-drive voltage, VG=0 Low gate-drive current, IG=0
Dr. Adel Gastli
Practical Devices
VCC RL IG + _ iSW + VSW _ Controlled switch
tON
VCC VSW(sat)
vSW
ISWs iSW ISW0 iG IG(sat) vG VG(sat) td
ton
toff
t tr tn ts tf t0
VG
Ts=1/fs
PON
1 = Ts
pdt
PSW Switching power losses
tr ts tf PSW = f s pdt + pdt + pdt 0 0 0 PD = PON + PSW + PG
Conduction Switching power losses power losses

Dr. Adel Gastli
Gate-driver power
Switch Specifications
Voltage ratings
Forward & reverse repetitive peak voltages On-state forward drop-voltage drop
Current ratings
Average, rms, repetitive peak, nonrepetitive peak, off-state leakage
Switching speed or frequency
di/dt dv/dt Switching losses Gate drive requirements Safe operating area (SOA): limits on the allowable steady-state operating points in the v-i coordinates I2t for fusing Temperatures Thermal resistance
Dr. Adel Gastli
34
Device Choices
Non of the existing switching devices is ideal. For high power applications from the ac 5060Hz main supply, phase control and bidirectional thyristors are the most economical choices. COOLMOS and IGBTs are potential replacements for MOSFETS and BJTs, respectively, in low and medium power applications.
Dr. Adel Gastli
35
Device Choices (cont.)

GTOs and IGCTs are most suited for high-power applications requiring forced commutation. With the increased advances in technology, IGBTs are increasingly employed in high-power applications and MCTs may find potential applications that require bidirectional blocking voltages.
DESIGN OF POWER ELECTRONICS EQUIPMENT 1. Design of power circuits 2. Protection of power devices 3. Determination of control strategy 4. Design of logic and gating circuits
Dr. Adel Gastli
37
In this course, power devices are assumed ideal switches unless stated otherwise. Effect of stray inductance, circuit resistances, and source inductance are usually neglected. Before prototype is built, the designer should investigate the effects of the circuit parameters and device imperfections. The design should be modified if necessary. Only after the prototype is built and tested, the designer can be confident about the validity of the design proposed and can estimate more accurately some circuit parameters (e.g. stray inductance).
RMS VALUES OF WAVEFORMS rms values of current waveforms must be known:

To accurately determine losses in a device To accurately determine current ratings of the device and components
Current waveforms are rarely sinusoids or rectangles

I rms
1 = T
i 2 dt
See page 25 (Fig. 1.17) for some rms values of commonly encountered waveforms
Time period If a waveform can be broken into harmonics whose rms values can be calculated individually, the rms value of the actual waveform can be approximated satisfactory as:
2 2 2 2 I rms = I dc + I rms (1) + I rms ( 2 ) L + I rms ( n )
dc component
Dr. Adel Gastli
Harmonics rms values

40
Problems Solving: Find the average and rms values of the following waveforms. 100V vo 8ms 20ms 100V t 0 vo 2
100V 0
vo 2
100V
vo /2 2
Dr. Adel Gastli
41
TYPES OF POWER ELECTRONIC CIRCUITS Diode rectifiers Ac-dc converters (controlled rectifiers) Ac-ac converters (ac voltage controllers) Dc-dc converters (dc choppers) Dc-ac converters (inverters) Static switches (ac or dc)
Diode rectifiers
Converts ac into a fixed dc voltage. Input could be either single phase or three phase v
Diode D1
+
Vm 0 Vm 0
vs = Vm sin t
vi
ac supply
vs = Vm sin t
vo
_ Load resistance R + + _s
vo
Diode D2
Dr. Adel Gastli
Find the expressions of average and rms values.

Ac-dc converters
Converts ac into a variable dc voltage. Input could be either single phase or three phase v
Thyristor T1
+
Vm
vs = Vm sin t
vi
ac supply
vs = Vm sin t
_ Load resistance R + + _s
vo
0 -Vm v Vm o 0
Thyristor T2
Dr. Adel Gastli
Find the expressions of average and rms values as a function of .

Ac-ac converters
Converts fixed ac into a variable ac voltage. Input could be either single phase or three phase
Triac
+ ac supply
Vm
vs
vs = Vm sin t
vs = Vm sin t
vo
Load resistance R
0 -Vm v Vm o 0
Find the expressions of average and rms values as a function of .

Dc-dc converters (Choppers)

Converts fixed dc into a variable dc voltage.
+
Transistor Q1
dc supply + _ VGE +
1 0 Vs
vs
vs
t1 vo
t
V0=Vs
vo
Load
t = 1 Duty cycle T
Dr. Adel Gastli Power Electronics: Introduction
t
46
Dc-ac converters (Inverters)

Converts fixed dc into a variable ac voltage. Output can be single phase or three phase
+
1
M1 M3
+ Load _ + _ vg3
G G + vg1 _
vg1, vg2 T/2 T
vs dc supply
0v , v g3 g4 vo
t t
vo
M4
G
M2
G
vs -vs
t
47
Dr. Adel Gastli
Static switches
Power electronic devices can operate as static switches or contactors to transmit either ac or dc power to loads. Example: Uninterruptible Power Supply (UPS)
Mains 1 ac supply Mains 2 Rectifier/charger Battery Inverter Isolation transformer Static bypass switch Load
Dr. Adel Gastli
48
PERIPHERIAL EFFECTS (Effects of Power Converters) Problems: Problems

Introduce current and voltage harmonics into the supply system and on converters output. Distortion of the output voltage. Harmonic generation into supply system Interference with communication and signaling circuits
Solutions: Solutions
It is normally necessary to introduce filters in the input and output of a converter system to reduce the harmonic level to an acceptable magnitude.
Power Source Input filter Power converter Switching control signal generator
Output filter
Output
Power quality issues

Application of power electronics poses a challenge on the power quality issues and raises problems and concerns to be resolved by researchers. Important factors that measure the quality of a waveform are:
Total harmonic distortion (THD) Displacement Factor (DF) Input power factor (IPF)
Harmonic content of the waveforms is required to find these factors.

To evaluate the performance of a converter, the input and output voltages and currents of a converter are expressed in a Fourier series. series The control strategy of a power converter play an important part on the harmonic generation and output waveform distortion, and can be aimed to minimize or reduce these problems. Electromagnetic radiation and interference can be avoided by grounded shielding.
POWER MODULES
Power devices are available as a single unit or a module. A power converter often requires two, four, or six devices, depending on its topology. Power modules with dual (in half-bridge configuration), or quad (in full bridge) or six (in three phase) are available for almost all types of power devices.
Modules offer the advantages of

lower on-state losses, high voltage and current switching characteristics, high speed (switching frequency) Some modules include transient protection and gate drive circuitry. Gate drive circuits are commercially available to drive individual devices or modules.
INTELLIGENT MODULES
Intelligent modules, which are the state of the art of power electronics, integrate the power module and the peripheral circuit. Peripheral circuits consists of:
Input or output isolation from, and interface with, the signal and high-voltage system, A drive circuit Protection and diagnostic circuit Microcomputer control Control power supply
Users need only to connect external (floating) power supplies. An intelligent module is also known as smart power. Smart power technology can be viewed as a box that interfaces power source to any load. These modules are used increasingly in power electronics.
Page 28: list of websites of some manufacturers of these modules
JOURNAL & REFERENCES

See section 1.11 in your textbook at page 28. Search the internet for more recent sites (keywords: power electronics, tutorials, circuits, devices,)
Dr. Adel Gastli
57

Power Electronics

Transféré par

Informations du document

Description originale:

Copyright

Formats disponibles

Partager ce document

Partager ou intégrer le document

Options de partage

Avez-vous trouvé ce document utile ?

Ce contenu est-il inapproprié ?

Droits d'auteur :

Formats disponibles

Power Electronics

Transféré par

Droits d'auteur :

Formats disponibles

POWER ELECTRONICS POWER ELECTRONICS

INTRODUCTION TO POWER ELECTRONICS

Dr. Adel Gastli

DEFINITION & HISTORY

APPLICATIONS OF POWER ELECTRONICS