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=
|
\
|
1
kT
eV
s C
BE
e I I
W N
n D qA
W
n D qA
I
A
i n e
po n e
s
2
= =
Collector-base diode is reverse biased therefore V
CB
> 0
where
A
e
Area of base-emitter junction
W Width of base region
I
C
is independent of collector voltage
10
N
A
Doping concentration in base
D
n
Electron diffusion constant
n
i
Intrinsic carrier concentration = f(T)
Base current
Base current consists of two components: i
B1
and i
B2
:
i
B1
, due to forward bias of EBJ, is an exponential function of V
BE
.
i
B2
, due to recombination, is directly proportional to the numbers of
electrons injected from the emitter, which in turn is an exponential function of V
BE
.
Forward Active Mode common base current gain ()
In common base configuration, the current transfer mode ratio () of a
bipolar transistor in the forward active mode is defined as the ratio of
the collector current (I
C
) to the emitter current (I
E
):
E
C
I
I
=
B C E
I I I + =
Forward Active Mode common emitter current gain ()
11
C
B
C
E
I
I
I
I
+ =1
1
1
1
+ =
=
1
Forward Active Mode common emitter current gain ()
The current gain () of a bipolar transistor under common emitter forward
active mode is defined as the ratio of the collector current (I
C
) to the base
current (I
B
):
B
C
I
I
=
I-V Characteristics of npn BJT under forward active mode
Common Base configuration
12
Input characteristics Output characteristics
Input characteristics are like a normal forward biased diode. As V
CB
increased I
E
also increased due to Early Effect (increased reverse biased at CB junction causes
reduction in effective base width) .
As the CB junction is reverse biased, the current I
C
depends totally on I
E
. When I
E
=0
, I
C
=I
CB0
is the current caused by the minority carriers crossing the pn-junction. I
cB0
is
leakage current called as collector base current with emitter open. When I
E
is
increased, I
C
is increased correspondingly.