TIC106 SERIES SILICON CONTROLLED RECTIFIERS

5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 A
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) Surge on-state current at (or below) 25C (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITSM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT

NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

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TIC106 SERIES SILICON CONTROLLED RECTIFIERS

electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 12 V VAA = 12 V tp(g) 20 s VGT Gate trigger voltage VAA = 12 V tp(g) 20 s VAA = 12 V tp(g) 20 s VAA = 12 V IH Holding current Initiating IT = 10 mA VAA = 12 V Initiating IT = 10 mA VT dv/dt NOTE Peak on-state voltage Critical rate of rise of off-state voltage IT = 5 A VD = rated VD (See Note 6) RGK = 1 k TC = 110C 10 RGK = 1 k TEST CONDITIONS RGK = 1 k IG = 0 RL = 100 RL = 100 RGK = 1 k RL = 100 RGK = 1 k RL = 100 RGK = 1 k RGK = 1 k TC = - 40C TC = 110C 0.4 0.2 8 mA 5 1.7 V V/s 0.6 TC = 110C TC = 110C tp(g) 20 s TC = - 40C 5 MIN TYP MAX 400 1 200 1.2 1 V UNIT A mA A

6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.5 62.5 UNIT C/W C/W

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

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TIC106 SERIES SILICON CONTROLLED RECTIFIERS

THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT DERATING CURVE
IT(AV) - Maximum Average Anode Forward Current - A 6 Continuous DC 5 PA - Anode Power Dissipated - W
TI20AA

ANODE POWER DISSIPATED vs ON-STATE CURRENT

100 TJ = 110C
TI20AB

4 = 180 3

10

2 0 1 180 Conduction Angle 0 30

1 40 50 60 70 80 90 100 110 1 10 IT - On-State Current - A 100 TC - Case Temperature - C

Figure 1.

Figure 2.

SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION

100 TC 80 C ITM - Peak Half-Sine-Wave Current - A No Prior Device Conduction Gate Control Guaranteed
TI20AC

TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION

10 RJC(t) - Transient Thermal Resistance - C/W
TI20AD

10

1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100

01 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100

Figure 3.

Figure 4.

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

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TIC106 SERIES SILICON CONTROLLED RECTIFIERS

TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE vs CASE TEMPERATURE
1 VAA = 12 V VGT - Gate Trigger Voltage - V 08 RL = 100 tp(g) 20 s 06 IH - Holding Current - mA RGK = 1 k
TC20AB

HOLDING CURRENT vs CASE TEMPERATURE

10 VAA = 12 V RGK = 1 k Initiating IT = 10 mA
TC20AD

04

02

0 -50

-25

25

50

75

100

125

0.1 -50

-25

25

50

75

100

125

TC - Case Temperature - C

TC - Case Temperature - C

Figure 5.

Figure 6.

PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT

2.5
TC20AE

VTM - Peak On-State Voltage - V

2.0

TC = 25 C t p = 300 s Duty Cycle 2 %

1.5

1.0

0.5

0.0 01

10

ITM - Peak On-State Current - A

Figure 7.

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP