EXPERIMENT : NO

02
VI CHARACTERISTICS OF A SILICON DIODE

TITLE

DATE OF EXPERIMENT

20th October, 2010

INSTRUCTOR

Amena Ejaz Aziz

NAME ROLL NO

______________________________________ ___________________

ELECTRONIC DEVICES LAB (CSE 202L) LAB # 2: VI CHARACTERISTICS OF A SILICON DIODE

Objective:
In this lab you have to measure VI characteristics of a Silicon Diode in both forward and reverse-bias mode, as well as learn to recognize what mechanisms cause current flow in each region of diode operation. We will also see more clearly how real diode characteristics are different from those of the ideal diode.

Background:
The diode is a device formed from a junction of n-type and p-type semiconductor material. The lead connected to the p-type material is called the anode and the lead connected to the n-type material is the cathode. In general, the cathode of a diode is marked by a solid line on the diode.

When analyzing circuits, the real diode is usually replaced with a simpler model. In smplest form, the diode is modeled by a switch. The switch is closed when the diode is forward biased and open when the diode is reverse biased.

Forward Biased Silicon Diodes: When you take your measurements for this experiment, you will find the response of your diode for both the forward and the reverse bias modes of operation. If you took your data from both modes of operation and plotted it on a linear scale it would look similar to the figure shown.

CSE 202L (VI characteristics of a Silicon Diode)

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Reverse Biased Silicon Diodes: A Silicon diode can start conducting large current in the reverse direction once the reverse breakdown voltage, Vbr, is reached. Breakdown conduction is nondestructive as long as the current is limited to a safe value (e.g., the diode is connected in series with a current limiting resistor). The reverse bias current just below Vbr, is given in equation:

The variable m is a fitting parameter that depends on the doping concentration of the diode. For a very heavily doped n-type region and a comparatively lightly doped p-type region (denoted as np) in a silicon diode, m is approximately 2.0; for a pn silicon diode, m is approximately 4.0.

Procedure:
1. Using the 1N4148, set up the circuit on your bred-board using the DC Power Supply as the voltage source.

2. Take the specified reading and fill the following table:

CSE 202L (VI characteristics of a Silicon Diode)

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S. No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Supply Voltage (Vs) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0

Diode Voltage (Vr)

(forward biased)

Circuit Current (I)

CSE 202L (VI characteristics of a Silicon Diode)

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3. Now connect the circuit in reverse-biased mode and take the same readings as before. Fill the readings in eh following table: S. No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Supply Voltage (Vs) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 Diode Voltage (Vr)
(reverse biased)

Circuit Current (I)

CSE 202L (VI characteristics of a Silicon Diode)

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Post lab activities:

1. Create a Linear (I) vs. Linear (V) plot and a Log (I) vs. Linear (V) plot for each set of data. Make sure both axes are labeled and the graph is appropriately titled. You have to make a combined graph of forward and reverse biased region. 2. Compare the important features of silicon versus a germanium diode. 3. Draw the following circuit in Multisim and submit the circuit-diagram of multi-sim along with the voltage readings at point X:

4. Diode as logic gates: Implement the following circuits on bred-board and fill the truth-table. (It will also give you an idea, that in case of nonavailability of ICs, how you can implement the basic logic gates with diodes). a.

b.

CSE 202L (VI characteristics of a Silicon Diode)

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