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TO-39
2N3725
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 C/W C/W
V BE (s at )*
h F E*
DC Current Gain
V CE V CE V CE V CE V CE V CE
hfe C CB O C EB O t o n ** t o f f **
High Frequency Current Gain Collector-base Capacitance Emitter-base Capacitance Turn-on Time Turn off Time
V CE = 10 V V CB = 10 V V CB = 0.5 V V CC = 30 V
I C = 500 mA V CC = 30 V I B1 = I B2 = 50 mA
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DC Current Gain. Collector-emitter Saturation Voltage.
Switching Characteristics.
Switching Characteristics.
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Test Circuit for ton, toff.
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D G I H E F
L B
P008B
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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