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Product Specifications

Ref No. Total Page Page No.

A-1 8 1

AN7580
Structure Appearance Application Function Silicon Monolithic Bipolar IC SIL-12 Pins Plastic Package (FP-12S Power Type With Fin) Audio

25W (6) x 2ch BTL Power Amplifier Built-in Standby and Muting Features Incorporating Various Protection Circuits

A No. 1 2 3 4 5 6 7 8 Item
Storage Temperature

Absolute Maximum Ratings Symbol

Tstg Topr Popr Gopr Sopr Vcc Icc PD

Ratings
-55 ~ +150 -25 ~ +75
1.013x105 0.61x105

Unit
C C Pa m/s m/s V A W
2 2

Note

Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Power Supply V oltage Power Supply Current Power Dissipation

9,810 4,900

24 8.0 37.5

Operating Supply V oltage Range Note: 1) Without input signal, Vcc is up to 27V 2) Ta = 75C with infinite heatsink

Vcc

8.0 V ~ 20.0 V

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1

Prepared Checked Approved

Product Specifications

Ref No. Total Page Page No.

B-1 8 2

AN7580

B
No. 1 2 3 4 5 6 7 8 9 10 11 12

Electrical Characteristics < Vcc = 12V RL = 4, freq. = 1 kHz, 2 Channel Outputs > , (Unless otherwise specified, the ambient temperature is 25C2C) Item
Quiescent Circuit Current Output Noise V oltage V oltage Gain Total Harmonic Distortion Maximum Output Power 1 Maximum Output Power 2 Channel Balance Channel Crosstalk Output Offset V oltage Ripple Rejection Standby Current Muting Effects

Symbol Test Cct.

Icq Vno Gvc THD Po1 Po2 CB CT V off RR 1 1 1 1 1 1 1 1 1 1 1 1

Condition
Vin=0mV

Limit Unit Note Min Typ Max

-

150 0.27 40 0.07 15 25 0 70 0 60 1 80

300 0.5 42 0.4

-

mA
mVrms

Vin=0mV Rg=20k ,

Vin=20mV

38
-

dB % W W dB dB
mV

Vin=20mV

THD=10% VCC=18V, RL=6, THD=10% Vin=20mV

12 21.5 -1 55 -350 50
-

1
-

Vin=20mV Rg =20k ,

Rg=20k Vr=1Vrms, fr=120Hz, Rg=20k Vin=0mV Vin=20mV

350
-

dB A dB

I STB
MT

10
-

70

Note : 1) With a filter band 20Hz ~20kHz (12 dB/OCT) used. 2) With a filter band 400Hz ~30kHz used.

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1

Prepared Checked Approved

Product Specifications

Ref No. Total Page Page No.

C-1 8 3

AN7580

Description of Test Circuits and Test Methods

[Test Circuit 1]

AN7580
1
Vcc

3
V out1 RL 4

4
10

5 +
51k 20k STB ON

8
33

9 +

10

11
V out2 RL 4

12

2200

8.2k 20k

MUTE ON 3V

OFF Vin1 5V Vin2

OFF

Note : * STB 'OFF' means 5V . MUTE 'OFF' means 0V .

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1

Prepared Checked Approved

Product Specifications

Ref No. Total Page Page No.

D-1 8 4

AN7580

Circuit Function Block Diagram

REF MUTE Standby Circuit

Pin Descriptions
Pin No. 1 2 3 4 5 6 Pin Descriptions Vcc Ch1 +ve Phase Output Ch1 Output GND Ch1 -ve Phase Output Standby Ch1 Input Pin No. 7 8 9 10 11 12 Pin Descriptions Pre GND Ch2 Input Mute Ch2 -ve Phase Output Ch2 Output GND Ch2 +ve Phase Output

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

FMSC-PSDA-002-01 Rev.1

10

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

+ + -

Protection Circuit Thermal Shutdown Load Short Vcc Short Ground Short ASO Protect

11

12

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Product Specifications

Ref No. Total Page Page No.

E 8 5

AN7580
Package Name Unit : mm

FP-12S

3.6

6.4 0.3

7.7 0.3
12

7.8 0.3

29.96 0.3

28.0 0.3

20.00.1

0.6

R1.8

1.2 0.1

+0.1 0.25 -0.05

2.54

0.6 0.1

3.5 0.3

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1

29.6 0.3
Name of item Date Code Company insignia

Prepared Checked Approved

Product Specifications

Ref No. Total Page Page No.

F-1 8 6

AN7580
SiN, Fe group, Ag plating, Solder plating, Ag paste, PSG, Cu group, Au plating, Solder dip,

(Structure Description)
Chip surface passivation Lead frame material Inner lead surface process Outer lead surface process Chip mounting method Wire bonding method Wire material, Diameter Mold material Molding method Fin material Others ( Others ( Others ( Others ( ) ) ) ) ) ) ) ) ) )

1 2 , 6 2 6 3 4 4 5 5 7

Au-Si alloy, Solder, Others ( Others ( Others ( Others ( Multiplunger mold, Others ( Others (

Thermalsonic bonding, Au, Epoxy, Transfer mold, Cu Group Diameter 38 m

Package FP-12S

1 4 3

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1

Prepared Checked Approved

Product Specifications

Ref No. Total Page Page No.

G-1 8 7

AN7580

Application Circuit
VCC 12V

Input GND

VCC

2200

1
OUT1 Output1 GND

40dB IN 1

2 3

RL 4

51k STB

40dB

5
10 STB Vref MUTE 8.2k

OUT1

MUTE

9
33 40dB

10 11

OUT2 Output2 GND

IN 2

8
40dB

RL 4

12
OUT2

STB 'OFF' STB 'ON' Mute 'OFF' Mute 'ON' Eff. Date 09-JUL-2001
FMSC-PSDA-002-01 Rev.1

5V 0V 0V 3V Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

Eff. Date

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Product Specifications

Ref No. Total Page Page No.

G-2 8 8

AN7580
(1) Tc = Ta, 62.5W ( j-c = 2 C/W ) (2) 20.83W ( f = 4.0 C/W )

PD - Ta Curves

With a 100cm 2 X 3mm Al heat sink (black colour coated) or a 200cm 2 X 2mm Al heat sink (not lacquered) (3) 15.63W ( f = 6.0 C/W ) With a 100cm X 2mm Al heat sink (not lacquered) (4) 3.0W at Ta = 25C ( j-a = 42C/W )
2

80 70
62.5W

Without heat sink

60 Power Dissipation PD ( W )
(1)

50 40 30 20 10
3.0W (4) 20.8W 15.6W (2) (3)

0 0 25 50 75 100 125 150

Ambient Temperature Ta ( C )

Eff. Date 09-JUL-2001

Eff. Date

Eff. Date

Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd.

FMSC-PSDA-002-01 Rev.1