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Product specification
BY329 series
SYMBOL
k 1
a 2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(AV) PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Average forward current1 square wave; = 0.5; Tmb 122 C sinusoidal; a = 1.57; Tmb 125 C CONDITIONS BY329 MIN. -800 800 800 600 MAX. -1000 -1200 1000 1200 1000 800 8 7 11 16 75 82 1200 1000 UNIT V V V A A A A A A
I2t Tstg Tj
RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Tmb 122 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature
-40 -
28 150 150
A2s C C
1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200
Philips Semiconductors
Product specification
BY329 series
TYP. 60
MAX. 2.0 -
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A VR = VRWM; Tj = 125 C MIN. TYP. 1.5 0.1 MAX. 1.85 1.0 UNIT V mA
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL trr Qs dIR/dt PARAMETER Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current CONDITIONS IF = 1 A; VR > 30 V; -dIF/dt = 50 A/s IF = 2 A; VR > 30 V; -dIF/dt = 20 A/s IF = 2 A; -dIF/dt = 20 A/s MIN. TYP. 100 0.5 50 MAX. 135 0.7 60 UNIT ns C A/s
September 1998
Rev 1.200
Philips Semiconductors
Product specification
BY329 series
dI F dt
100 90 80
IFS (RMS) / A
BY329
trr time
70 60 50 40
IFSM
Qs
25%
100%
30 20 10
rrm
0 1ms
10ms
0.1s tp / s
1s
10s
Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM.
IF / A Tj = 150 C Tj = 25 C BY229F
20
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
BY329
30
15
20
10
130
tp T t
5
T
D=
10
140
typ
max
0 0 2 4 6 IF(AV) / A 8 10
150 12
0 0 0.5 1 VF / V
1.5
Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
BY329 Tmb(max) / C a = 1.57 1.9 10 4 5 140 2.2 2.8 130
15
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
120
10
Qs / uC Tj = 150 C Tj = 25 C
BY329
IF = 10 A 10 A 2A 1 1A 2A 1A
0 0 2 4 IF(AV) / A 6
150 8
0.1 1
10 -dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).
September 1998
Rev 1.200
Philips Semiconductors
Product specification
BY329 series
1000
trr / ns
BY329 IF = 10 A 10A 1A 1A
10
100
0.1
0.01
P D
tp
D=
tp T t
10us
10s
100
Cd / pF
BY329
10
1 1
10
VR / V 100
1000
September 1998
Rev 1.200
Philips Semiconductors
Product specification
BY329 series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
September 1998
Rev 1.200
Philips Semiconductors
Product specification
BY329 series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
September 1998
Rev 1.200
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