I NT EG RAT ED C RC T I UI

I C FABRI C I ON PROC AT ESS

I C Fabrication Process

I C DENSI T Y
1. 2. 3. 4. Small Scale I C (SSI ) Medium Scale I C (MSI ) Large Scale I C (LSI ) Very Large Scale I C (VLSI )

Relative C omponent C ount of I C s

IC

I C PAC KAG ES

I C PAC KAG E

Pin G Array (PG rid A)

Dual I nline Package (DI P)

Small Outline I C (SOI C ) Ball G Array (BG rid A)

Plastic Lead C C hip arrier (PLC ) C

IC

C omplete C ircuit in One Package

DI P I C
1. C OMMON LOG C I C (14- and 16-pin) I 2. MEMORY I C (16-, 18-, 24- and 28-pin) 3. MI C ROPROC ESSOR I C (40-, 44- and 48-pin)

DI P I C PI N NUMBERI NG

DI P I C

74 SERI ES I C C ODE
DM 7400 xxx N DM 7400 xxx N
Denot es impr ovement s f r om manuf act ur e Denot es S pecif icat ion and T ype of I C :
L = Low Power (I C T T L) LS = Low Power, Schottky (I C T T L) ALS = Advanced, Low Power, Schottky (I C T T L) H = High Speed (I C T T L) C = C omplementary MOSFET (I C C MOS) HC = High Speed, C omplementary MOSFET (I C C MOS) HC = High Speed, C T omplementary MOSFET , I nput T T L (I C C MOS)

Denot es I C S pecial F unct ion Manuf act ur e Code

74 SERI ES I C FAMI LY
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 7400 7402 7404 7407 7408 7432 7447 7448 7474 7490 74138 74153 74157 74160 74164 74174 74193 = = = = = = = = = = = = = = = = = NAND NOR NOT / I NVERT ER YES / BUFFER AND OR 7 SEG MENT DI SPLAY DRI VER (C OMMON C HODE) AT 7 SEG MENT DI SPLAY DRI VER (C OMMON ANODE) D FLI P-FLOP DEC ADE C OUNT ER 3 T O 8 DEC ODER 4 T O 1 MULT I PLEXER 2 T O 1 MULT I PLEXER SYNC HRONOUS BI NARY C OUNT ER SHI FT REG ST ER I D FLI P-FLOP WI T H C OMPLEMENT OUT PUT SYNC HRONOUS UP/DOWN BI NARY C OUNT ER

40 SERI ES I C C ODE
CD 4001 B E D C 4001 B E

Denot es impr ovement s f r om manuf act ur e Denot es Plast ic f or Double I nput Denot es I C S pecial F unct ion Manuf act ur e Code

40/45 SERI ES I C FAMI LY

1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 4011 4001 4009 4010 4017 4021 4052 4053 4071 4081 40147 40174 4510 4511 4513 4515 4518 = = = = = = = = = = = = = = = = = NAND NOR NOT / I NVERT ER YES / BUFFER DEC ADE C OUNT ER 8 BI T ST AT I C SHI FT REG ST ER I 4C HANNEL MULT I PLEXER 2C HANNEL MULT I PLEXER OR AND 10 T O 4 LI NE BC PRI ORI T Y ENC D ODER D FLI P-FLOP PRESET T ABLE UP/DOWN BC C D OUNT ER 7 SEG MENT DRI VER (C OMMON C HODE) AT 7 SEG MENT DRI VER (C OMMON ANODE) 4 T O 16 LI NE DEC ODER BC UP C D OUNT ER

I C PROPAG I ON DELAY AT

LOG C LEVEL I
VCC VDD

HI G H HI G H T HERESHOLD

T HERESHOLD LOW LOW

GND VS S

C ONT ROL C RC T I UI

Active High

Active Low

TTL IC

TTL IC
T T L (T ransistor-T ransistor Logic) is the best established and most diversified I C family. LS (Low-power Schottky) is functionally identical to T T L but is slightly faster and use 80% less power. T T L/LS chips require a regulated 4,75 5,25 volt power supply. Heres a simple battery supply : T he diode drops the battery voltage a safe level. Both capacitors should be installed on the T T L/LS circuit board. C ircuit with lots of T T L/LS chips can use lots of current. Use a commercial 5 volt line powered supply to save batteris.

T T L LOG C I NPUT I

Active High

Active Low

T T L I C DRI VER

T T L I C Driver

C MOS I C

C MOS I C
MOS (Metal Oxide Semiconductor) I C can contain more s functions per chip than T T L/LS and very easy to use. Most chips in this section are C -MOS (C omplementary MOS). T hey consume very little power and operate over a 3-15 volt range. C MOS can be powered by this : Or you can use a line powered supply made from an I C Voltage Regulator 7805/7812/7815. I ncidentally, you can power a C MOS circuit from two series connected penlights cells, but a 9-12 volt supply will give better performance.

C MOS OPERAT I ON
1. 2. T he input voltage should not exceed VDD (except 4049 and 4050) Avoid, if possible, slowly rising and falling input signals since they can cause excessive power consumption. Rise-time faster than 15 microseconds are best. All unused input must be connected to VDD (+ ) or VSS (G ND). Otherwise erratic chip behavior and excessive current consumption will occur. Never connect an input signal to a C MOS circuit when power is off.

3.

4.

C MOS PREC AUT I ON

1. Never store MOS I C in non-conductive plastic s snow, trays, bags or foam. 2. Place MOS I C pins down on an aluminum foil s sheet or tray when they are not in a circuit or stored in conductive foam. 3. Use a battery powered iron to solder MOS chips. Do not use an AC powered iron.

C MOS LOG C I NPUT I

Active High

Active Low

SC HMI T T T RI G ER G