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Evaluation of High Efficiency PAs for use in Supply Supply- and Load-Modulation Transmitters Load Modulation
F Fager, H Hossein M h d Nemati, i Mashad N ti Ulf Gustavsson, ,*Rik Jos, and Herbert Zirath
Chalmers University of Technology, Sweden, Ericsson, Sweden, * NXP Semiconductors, Netherlands
Ch i ti Christian
GigaHertz centre
christian.fager@chalmers.se
GigaHertz Centre
Outline O li
Motivation
PA efficiency for modulated signals Efficiency enhancement techniques
2009-01-19
GigaHertz Centre
Outline O li
Motivation
PA efficiency for modulated signals Efficiency enhancement techniques
2009-01-19
GigaHertz Centre
To improve efficiency, PAE must be increased at intermediate Pout, where p y, the signal spends most of its time
Power Amplifier Symposium 2009 4
2009-01-19
GigaHertz Centre
Dynamic supply modulation (EER / envelope tracking / hybrid EER) Dynamic load modulation Outphasing (Chireix / LINC) Doherty Pulse-width modulation (RF-PWM, b d P l idth d l ti (RF PWM bandpass ) ...
Power Amplifier Symposium 2009 5
GigaHertz Centre
Outline O li
Motivation
PA efficiency for modulated signals Efficiency enhancement techniques
2009-01-19
GigaHertz Centre
Different techniques can be defined depending on how the RF input p p power and Vdd are jointly controlled... j y
2009-01-19
GigaHertz Centre
2009-01-19
GigaHertz Centre
2009-01-19
GigaHertz Centre
Pout ( Pin , Vdd ) Pin PAEPA ( Pin , Vdd ) = Pdc ( Pin , Vdd )
1 GHz LDMOS class D-1 SMPA
Devices: 2Freescale MRF282
Performance summary
VDD = 30 V Pout = 20W PAEMAX = 70% Gain = 15 dB Bandwidth (PAE >50%): 90 MHz
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Efficiency and output power have mutual dependence on input power and supply voltage
The Vdd and Pin combination that maximizes efficiency can be determined for every given Pout
2009-01-19 Power Amplifier Symposium 2009 11
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EER
PA =
Pin and Vdd are independent parameters in the figure
in
out
p ( Pout ) dPout
Simultaneous Pin and Vdd control can give a substantial efficiency improvement for the presented LDMOS class D-1 PA
2009-01-19
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GigaHertz Centre
Outline O li
Motivation
PA efficiency for modulated signals Efficiency enhancement techniques
2009-01-19
13
GigaHertz Centre
GigaHertz Centre
2009-01-19
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GigaHertz Centre
PAEPA ( Pin , L ) =
2009-01-19
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GigaHertz Centre
Th L and Pin combination th t maximizes efficiency can b The d bi ti that i i ffi i be determined for every given Pout
At max output power, efficiency is maximized for 50 A higher impedance is desired at reduced output power
2009-01-19
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Optimal drive ZL = 50
Si Simultaneous Pin and L control can also give a significant lt d t l l i i ifi t efficiency improvement even with an existing PA
Design of tunable matching networks for high power applications is still a matter of research
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GigaHertz Centre
Outline O li
Motivation
PA efficiency for modulated signals Efficiency enhancement techniques
2009-01-19
19
GigaHertz Centre
Static supply and load modulation characterization for LDMOS class D-1 PA
Summary of efficiency predictions with WCDMA signal statistics
PAPR = 10.3 dB
PA peak efficiency Av verage efficienc [%] cy Av verage efficienc [%] cy
PAPR = 6.6 dB
PA peak efficiency
Traditional
Supply mod.
Load mod.
Traditional
Supply mod.
Load mod.
Both supply voltage and load impedance modulation show high potential for efficiency enhancement with existing PAs
2009-01-19
20
GigaHertz Centre
Conclusions C l i
1 Existing LDMOS class D-1 PA evaluated in supply and load modulation transmitter architectures
Static characterization used Average efficiency estimated using WCDMA signal statistics
Careful co-control of two input signals needed for maximum efficiency performance
New challenges in linearization and behavoural modelling
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GigaHertz Centre
Acknowledgements
Gi H t centre GigaHertz t
Swedish Governmental Agency of Innovation Systems (VINNOVA) ComHeat Microwave Ericsson Infineon Technologies NXP Semiconductors Saab
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