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Minority carriers
Majority carriers
Valence bands
Majority carriers
P region PN junction
Valence bands
Minority carriers
N region
Majority carriers
P region PN junction and Depletion region
Minority carriers
N region
PN junction formation
At equilibrium
Depletion Region
In the p-type region there are holes and in the n-type region there are extra electrons. Filling a hole makes a negative ion and leaves behind a positive ion on the n-side. A space charge builds up, creating a depletion region which inhibits any further electron transfer.-----BARRIER POTENTIAL
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Depletion Region
Depletion Region
It has equal thickness on both sides, if both blocks are having equal no: of impurity atoms. If p type is heavily doped than the n side, the depletion layer penetrates deeply into the n side to cover equal no: impurity atoms on equal side. If n type is heavily doped than the p side, the depletion layer penetrates deeply into the p side to cover equal no: impurity atoms on equal side.
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BIAS
Bias is a potential applied to a p-n junction to get desired mode of operation. It is used to control the width of the depletion layer. Types Forward bias minimum depletion layer and resistance. Reverse bias Maximum depletion layer and resistance.
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FORWARD BIAS
The conduction band electrons in n-type material are pushed by the ve terminal of the source and jump into p-type material source. The valance band holes in p-type material are pushed by the +ve terminal of the source and jump into n-type material. So, the depletion region becomes lesser/gone and electrons can pass, hence current will flows
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FORWARD BIAS
When the applied potential is greater than the barrier potential, the diode is forward biased. Bulk resistance-resistance of the n-type material + resistance of the p- type material. Typical value is 25ohms It depends on i) the dimensions of the n-type and p-type material, ii)the amount of doping and iii)the operating temperature.
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FORWARD BIAS
There are two ways. By applying a potential to the n-type material that is more ve than the p-type material. By applying a potential to the p-type material that is more +ve than the n-type material.
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REVERSE BIAS
Connect the diode to a source:
The electrons in n-type material will attracts to +ve terminal of the source. The holes in p-type material will attracts to ve terminal of the source. So, the depletion region becomes bigger and electrons cannot pass, hence no current flows.
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REVERSE BIAS
There are two ways. By applying a potential to the n-type material that is more +ve than the p-type material. By applying a potential to the p-type material that is more -ve than the n-type material.
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APPLICATIONS
Diode applications:
Rectifiers Switching diodes Zener diodes Varactor diodes (Varactor = Variable reactance)
Photodiodes
pn junction photodiodes p-i-n and avalanche photodiodes