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CHAPTER NO. 04
TRANSISTOR STRUCTURE
The basic structure of the bipolar junction transistor (BJT) determines its operating characteristics. The BJT (bipolar junction transistor) is constructed with three doped semiconductor regions emitter, base, and collector separated by two pn junctions as shown in Figure
The base region is lightly doped and very thin compared to the heavily doped emitter and the moderately doped collector regions
Prepared By: Engr KSK 4
The forward bias from base to emitter narrows the BE depletion region, and the reverse bias from base to collector widens the BC depletion region. The heavily doped n type emitter region is teeming with free electrons that easily diffuse through the forward biased BE junction into the p-type base region where they become minority. The base region is lightly doped and very thin so that it has a limited number of holes. Thus, only a small percentage of all the electrons flowing through the BE junction can combine with the available holes in the base. These relatively few recombined electrons forms the small base electron current.
Most of the electrons flowing from the emitter into base region do not recombine but diffuse into the BC depletion region because they are pulled through the reverse biased BC junction by the electric field set up by the force of attraction between positive and negative ions. The electrons now move through the collector region. This forms the collector electron current. The collector current is much larger than the base current. This is the reason transistors exhibit current gain.
TRANSISTOR CURRENTS
The directions of the currents in an npn and pnp transistor and its schematic symbol are shown as;
The above figures shows that the emitter current (IE) is the sum of collector current (IC) and the base current (IB) ,expressed as follow
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DC BETA (DC )
Definition: The ratio of the dc collector current (IC) to the dc base current (IB) is the dc beta (DC). It is also called the gain of a transistor.
Typical values of DC range from 20 to 200 or higher. DC is usually designated as an equivalent hybrid (h) parameter, hFE , on transistor data sheets.
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DC ALPHA (DC )
Definition: The ratio of the dc collector current (IC) to the dc emitter current (IE) is the dc alpha (DC). The alpha is a less used parameter than beta in transistor circuits.
Typical values of DC range 0.95 to 0.99 or greater but DC is always less than 1.
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EXAMPLE 4-1
SOLUTION
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Since the emitter is at ground ,by kirchhoffs voltage law, the voltage across RB is
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EXAMPLE 4-2
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SOLUTION
As we know that .We can calculate the base, collector and emitter current as
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Collector characteristic curves plotted between collector current IC versus VCE for specified values of base current IB
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SATURATION REGION
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When Base Emitter (BE) junction becomes forward biased the base current is increased The collector current also increases (Ic = IB) and VCE as a result of more drop across the collector resistor (VCE = Vcc - IcRc) When VCE reaches its saturation value VCE(Sat), the base collector (BC) junction becomes forward biased and IC can increase no further even with a continued increase in IB
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ACTIVE REGION
IC remains essentially constant for a given value of IB while VCE continues to increase
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CUTOFF REGION
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The base terminal open, resulting in base current of zero ICEO is very small so it could be neglected i.e; VCE = VCC
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EXAMPLE 4-3
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SOLUTION
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DC LOAD LINE
A DC load line drawn on a family of curves connecting the cutoff point and saturation point Bottom of load line is at ideal cutoff where IC = 0 & VCE = VCC Top of load line is at saturation where IC=IC (sat) & VCE = VCE(sat)
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EXAMPLE 4-4
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SOLUTION
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Typically , maximum rating are given for collector to base voltage , collector to emitter voltage , emitter to base voltage,collector current & power dissipation The product of VCE and IC must not exceed the maximum power dissipation, (means both cannot be maximum at the same time)
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EXAMPLE 4-5
SOLUTION
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A maximum power dissipation curve can be plotted on the collector characteristic curve
Transistor cannot operated in the shahded portion
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Ic(max) is the limiting rating between point A & B PD(max) is the limiting rating between point B & C VCE(max) is the limiting rating between point C & D
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EXAMPLE 4-6
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SOLUTION
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DERATING PD(MAX)
A transistor rating that tells how much the maximum allowable value of PD(max) decreased for each 1C rise
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EXAMPLE 4-7
SOLUTION
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DC QUANTITIES
DC quantities always carry an uppercase roman subscript. For example, IB ,IC and IE are the dc transistor currents.
VBE ,VCB and VCE are the dc voltages from one transistor terminal to another.
Single subscripted voltages such as VB,VC and VE are dc voltages from the transistor terminals to ground.
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AC QUANTITIES
AC quantities always carry an lowercase roman subscript. For example, Ib ,Ic and Ie are the ac transistor currents.
Vbe ,Vcb and Vce are the ac voltages from one transistor terminal to another.
Single subscripted voltages such as Vb,Vc and Ve are ac voltages from the transistor terminals to ground. The rule is different for internal transistor resistance. Transistor have internal ac resistances that are designated by lowercase r with an appropriate subscript. For example, the internal ac emitter resistance is designated as re
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AMPLIFICATION
Definition: Amplification is the process of linearly increasing the amplitude of an electrical signal
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TRANSISTOR AMPLIFICATION
A transistor amplifies current because the collector current is equal to the base current multiplied by the current gain . i.e. (Ic = IB) The transistor base current is small as compare to emitter and collector current so By keeping the above expression ,Let us consider a circuit in which an ac voltage Vin is superimposed on the dc bias voltage VBB by connecting them in series with the base resistor RB The dc bias voltage Vcc is connected to the collector through the collector resistor Rc
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TRANSISTOR AMPLIFICATION
The ac input voltage produces an ac base current which results in a much larger ac collector current
The collector current produces an ac voltage across Rc, which produces an amplified but inverted signal at the output.
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TRANSISTOR AMPLIFICATION
The forward biased base emitter (BE) juction presents a very low resistance re to the ac signal.
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TRANSISTOR AMPLIFICATION
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CONCLUSION
We can say that the transistor produces amplification in the form of gain, which is dependent on the values of Rc and re
Since Rc is always considerably larger in value than re , result the output voltage is always greater than the input voltage
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EXAMPLE 4-8
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SOLUTION
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TRANSISTOR AS A SWITCH
Transistor used as an electronic switch into two regions Cutoff region Saturation region
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CUTOFF REGION
In cutoff region, the transistor behaves as an open switch because base emitter (BE) juction is reversed biased which cause an open action between collector and emitter
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SATURATION REGION
In saturation region, the transistor behaves as a close switch between collector and emitter because both junctions base emitter (BE) and base collector (BC) are forward biased which cause the collector current to reach its saturation value
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Since VCE(sat) is very small compared to Vcc, it can usually be neglected. The minimum value of base current needed to produce saturation is
IB should be significantly greater than IB(min) to keep the transistor well in saturation
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EXAMPLE 4-9
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SOLUTION
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SOLUTION
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