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FABRICATION AND CHARACTERIZATION OF MEMS BASED OPTICAL HYDROGEN SENSORS (2012) HWANGIL HWANG
SAKTHIVISHNU.R
Sensing layer
Gasochromic materials of Pd
oxide wafer
Gasochromic devices
Gasochromic devices, which consists of an electrochromic layer and a thin catalyst coating. Can reversibly react with hydrogen & exhibiting significant changes in their optical properties. Transition metal oxide WO3 are well known electrochromic materials.
An alpha-beta phase transition which occurs at temperatures below 310C makes the metal dimensionally unstable and liable to severe distortion and failure. Current interest in gasochromic devices arises a interest on the
N-type 3C-SiC
P-type Si
Sensing part 3C SiC 3C-SiC Schottky barrier diode - atmospheric pressure chemical vapor deposition technique. The barrier height, ideality factor and series resistance IV
Silicon carbide is a semiconductor, which can be doped to ntype by nitrogen or phosphorus and p-type by aluminium, boron, gallium or beryllium
Responses graph
Responses of the sensors toward different H2 concentrations at room temperature for Pd.
linear response
= ( ) /( )100
Vinitial is the voltage measured in air Vresponse is the voltage at each hydrogen concentrations.
Conclusion
Pd, output signal decreased at high concentration of hydrogen by phase transition.
REFERENCE
Raman spectroscopic studies of gasochromic a-WO3 thin
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