Theoretical strength of

crystals
is much greater
then their experimental
strength
Dislocations and Strengthening
Mechanisms
Plastic deformation
corresponds to the
motion of large
numbers of
dislocations
dislocation density:
total dislocation length/unit
volume
number of dislocations/unit area
Carefully prepared crystal: 10
3
/mm
2
Heavily deformed crystal: 10
9
/mm
2

After heat treatment: 10
6
/mm
2
Metals under plastic deformation emit
energy
95% heat
5% internal energy stored as strain



Shear Stress
gamma-irradiated LiF single crystal.
Edge dislocation
Screw dislocation
Edge dislocation
Slip: process by which plastic deformation is
produced by a dislocation motion.
Slip plane: crystal plane along which the
dislocation travels
Slip direction: direction of motion
Slip System = slip plane + slip
direction
plane slip of area
direction slip in force
torque =
F
F cos
plane slip of area
F
t
cos
=
A
2
plane slip of area
F
t
cos
=
A
1
|
phi

1
2
cos
A
A
= |
A
2
A
1
| cos
2
1
A
A =
|

t
cos
cos
2
A
F
=
2
2
cos cos
cos
cos
A
F
A
F |
|

t = =
| o
|
|

t cos cos
cos cos
cos
cos
2
2
= = =
A
F
A
F
| o t cos cos =
(111)
FCC
x
z
y
] 1 1 0 [
] 0 1 1 [
] 1 10 [
Slip Systems
Cu ductility of 45% elongation
Ti ductility of 25% elongation
Zn
Resolved shear stress
The most favorable slip system
| o t cos cos =
R
max ) cos (cos (max) | o t =
R
The most favorable slip system
max ) cos (cos (max) | o t =
R
Critically resolved shear stress:
Minimum shear stress needed to start slip
This occurs at yield

max ) cos (cos |
t
o
crss
y
=
max ) cos (cos | o t
Y crss
=
The most favorable slip system
max ) cos (cos (max) | o t =
R
Critically resolved shear stress:
Minimum shear stress needed to start slip
This occurs at yield

max ) cos (cos | o t
Y crss
=
(max)
R crss
t t =
Minimum stress appears
at
|==45
cos (45)= 1/\2
o
y
=2t
crss
| o t cos cos
Y crss
=
A single crystal of cadmium is oriented for a tensile test so its slip
plane makes an angle of 65 with the tensile axis. Possible slip
directions are 30, 48, 78.
a) Which of the slip directions is most favored?
b) If plastic deformation begins at a tensile stress of 1.55 MPa, find
tcrss

a) cos 30= 0.87, cos 48= 0.67, cos 78=
0.21
= 30 most favored
b)

| o t cos cos
Y crss
=
65

MPa MPa
crss
57 . 0 65 cos 30 cos 55 . 1 = = t
At o=1.0 MPa, will the system slip?
No
Slip lines on copper
Polycrystalline material
Before deformation after
deformation








Equiaxial grains elongated grains
Deformation by twinning
(mechanical)
Slip
twinning


Strengthening in metals
Grain size reduction
Solid-solution
Strain hardening
Grain size reduction
Grain Size is regulated by
1. Rate of solidification
2. Plastic deformation
3. Heat treatments
Grain size reduction
Grain Boundary
barriers
Grain orientation
different
Atomic disorder at
boundaries
Hall-Petch
Equation
o
y
= o
0
+ k
y
d
-
.5
Grain size
reduction


Strengthening in metals
Grain size reduction
Solid-solution
Strain hardening
Solid-solution- Ni and Cu

Solid-solution Mechanism
Foreign atoms <
host atoms
tensile lattice
strain


Foreign atoms
>host atoms
compressive
lattice strain



Strengthening in metals
Grain size reduction
Solid-solution
Strain hardening
Strain hardening
Work hardening
Cold working
Process in which a ductile metal becomes harder
and stronger as it is plastically deformed.




A
d
area after deformation
100 %
0
0

|
|
.
|

\
|

=
A
A A
CW
d
Strain hardening
Recovery
Recrystallization
Grain Growth
Heat
Treatment
(annealing)
Recovery Recrystallization Grain Growth
Recovery
Stored internal strain
energy relieved by
dislocation motion
Recovery Recrystallization Grain Growth
Recrystallization
Formation of a new set
of strain-free crystals
within a previously cold
worked material.
Recovery Recrystallization Grain Growth
Grain Growth
Increase in average
grain size of a
polycrystalline material.
33% cold worked brass
Recrystallization 3s at 580
Recrystallization 4s at 580
Complete recrystallization 8s at 580
Grain Growth at 15 minutes at 580
Grain Growth at 10 minutes at 700
Recrystallization temperature
Temperature at which
recrystallization reaches completion
at 1 hour.

Brass at 580
o
C complete
recrystallization at 8sec
Recrystallization temperature for
brass is 450
o
C
iron
Grain Growth
Kt d d
n n
=
0
N=2

Kt d d
n n
=
0
Time Grain diameter
(min) (mm)
30 0.049
91 0.071
The average grain diameter for some metal alloy was measured as
function of time at 650C, which is tabulated below at two different
times:
Give the equation.
Calculate K
What was the original grain diameter?
What grain diameter would you predict after 135 min at 650C?
K=4/73E-5mm2/min
d0=.01mm
D135=7.98mm

Review for MSE 2034 Test 1
********All Quizzes and
Homeworks********
Definitions and formulae:
Chapter 2
Fig 2.8; ionic bond, covalent bond,
metallic bond, Van der Waal Bond
Chapter 3
crystal structure, unit cell (repeating
unit under translation), simple cubic,
face centered cubic, coordination
number, body centered cubic,
hexagonal closest packing, atomic
packing factor, grain, lattice,
diffraction, nl=2d sinq, diffraction
angle = 2q
Chapter 4
vacancy, N
V
= N exp(-Q
V
/kT), alloy,
substitutional point defect, interstitial,
point defect, edge dislocation
(Burgers vector perpendicular to
dislocation line), screw dislocation
(Burgers vector parallel to dislocation
line), twin boundary
Chapter 5
diffusion, self-diffusion, inter diffusion
or impurity diffusion, vacancy
diffusion, interstitial diffusion,
diffusion flux J = M/At, Ficks first law
J = -D(dC/dx), D = D
0
exp(-Q
d
/RT)
Chapter 6
stress, strain, Youngs modulus
(modulus of elasticity), Poissons
ratio, yield strength, tensile strength,
ductility, resilience, toughness,
hardness
Chapter 7
slip system, slip plane, slip direction,
critical resolved shear stress, lattice
strain, strengthening by grain size
reduction, solid solution hardening
and strain hardening, recovery,
recrystalization, Recrystalization
temperature, grain growth, t
R
= s cosq
cosl ; s
y
= s
0
+ kd
-1/2
, d
n
- d
0
n
= k t



Ionic bond

Covalent bond

metallic bond

Van der Waals Bond

crystal structure

unit cell

coordination number

atomic packing factor

Grain

Lattice

Diffraction

Vacancy

Alloy

substitutional point defect

point defect

edge dislocation

screw dislocation

Stress

Strain

Youngs modulus

Poissons ratio

yield strength

tensile strength

Ductility

Resilience

Toughness

Hardness

slip direction

critical resolved shear stress

lattice strain

grain size reduction hardening

solid solution strengthening

strain hardening

Recovery

Recrystallization

Recrystalization temperature

grain growth

Resolved Shear stress





****Review for MSE 2034 Test 1
****All Quizzes and Homeworks********
Definitions and formulae:
Chapter 2
Fig 2.8; ionic bond, covalent bond, metallic bond, Van
der Waal Bond
Chapter 3
crystal structure, unit cell (repeating unit under
translation), simple cubic, face centered cubic,
coordination number, body centered cubic, hexagonal
closest packing, atomic packing factor, grain, lattice,
diffraction, n=2d sinu, diffraction angle = 2u
Chapter 4
vacancy, N
V
= N exp(-Q
V
/kT), alloy, substitutional
point defect, interstitial, point defect, edge dislocation
(Burgers vector perpendicular to dislocation line),
screw dislocation (Burgers vector parallel to
dislocation line), twin boundary
Review for MSE 2034 Test 1
********All Quizzes and
Homeworks********
Definitions and formulae:
Chapter 2
Fig 2.8; ionic bond, covalent bond,
metallic bond, Van der Waal Bond
Chapter 3
crystal structure, unit cell (repeating
unit under translation), simple cubic,
face centered cubic, coordination
number, body centered cubic,
hexagonal closest packing, atomic
packing factor, grain, lattice,
diffraction, nl=2d sinq, diffraction
angle = 2q
Chapter 4
vacancy, N
V
= N exp(-Q
V
/kT), alloy,
substitutional point defect, interstitial,
point defect, edge dislocation
(Burgers vector perpendicular to
dislocation line), screw dislocation
(Burgers vector parallel to dislocation
line), twin boundary
Chapter 5
diffusion, self-diffusion, inter diffusion
or impurity diffusion, vacancy
diffusion, interstitial diffusion,
diffusion flux J = M/At, Ficks first law
J = -D(dC/dx), D = D
0
exp(-Q
d
/RT)
Chapter 6
stress, strain, Youngs modulus
(modulus of elasticity), Poissons
ratio, yield strength, tensile strength,
ductility, resilience, toughness,
hardness
Chapter 7
slip system, slip plane, slip direction,
critical resolved shear stress, lattice
strain, strengthening by grain size
reduction, solid solution hardening
and strain hardening, recovery,
recrystalization, Recrystalization
temperature, grain growth, t
R
= s cosq
cosl ; s
y
= s
0
+ kd
-1/2
, d
n
- d
0
n
= k t



Ionic bond

Covalent bond

metallic bond

Van der Waals Bond

crystal structure

unit cell

coordination number

atomic packing factor

Grain

Lattice

Diffraction

Vacancy

Alloy

substitutional point defect

point defect

edge dislocation

screw dislocation

Stress

Strain

Youngs modulus

Poissons ratio

yield strength

tensile strength

Ductility

Resilience

Toughness

Hardness

slip direction

critical resolved shear stress

lattice strain

grain size reduction hardening

solid solution strengthening

strain hardening

Recovery

Recrystallization

Recrystalization temperature

grain growth

Resolved Shear stress





Review for MSE 2034 Test 1
Chapter 5
diffusion, self-diffusion, inter diffusion or impurity
diffusion, vacancy diffusion, interstitial diffusion,
diffusion flux J = M/At, Ficks first law J = -D(dC/dx), D
= D
0
exp(-Q
d
/RT)
Chapter 6
stress, strain, Youngs modulus (modulus of
elasticity), Poissons ratio, yield strength, tensile
strength, ductility, resilience, toughness, hardness
Chapter 7
slip system, slip plane, slip direction, critical resolved
shear stress, lattice strain, strengthening by grain size
reduction, solid solution hardening and strain
hardening, recovery, recrystalization, Recrystalization
temperature, grain growth, t
R
= o cosu cos ; o
y
= o
0
+
kd
-1/2
, d
n
- d
0
n
= k t

Relate Yield strength to three
strengthening processes