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THEORY
UNIT -1
Chapter -2
(Neil weste p:- 41- 91)
Introduction
Channel width
Threshold voltage Vt
Thickness of SiO2
Carrier mobility
Threshold voltage (Vt):
Vt ,can be expressed as
<
_
<
'
,
>
NML = VILmax-VOLmax
NMH = VOHmax-VLIHmin
Noise
Margin
Input /output transfer
curve
A
D
C
E
Vout
VDD
VDD
B
Vin
Vtn
VDD-
Vtp
.
5VD
D
.
5VD
D
A. n/p=10
A
C
B
B. n/p=1
C. n/p=0.1
Vin
Vout
n/p
Ratio
NML = VILmax-VOLmax
NMH = VOHmax-VLIHmin
Static load MOS
inverters