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Content
General ideas about MEMS and m-FAB
Fundamental issues
Case Studies
Microengine, accelerometeretc
Micro-Fabrication
In the micro-scale
Machine
Form
Geometry
Function
What?
Flows
Mass
Fysics
Application
Fabrication
Processes
Motion
Interfaces Constraints
Who?
Why? Where?
Momentum
Energy Information
Modeling
Limiting Dominant
Performance
Rate Cost
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Form
Flows Physics
2
Market research
Conceptual design
Output f ( Input)
5
Consumer
6 Factory and mfg. systems
Assembly processes
Welding Bolting Riveting Soldering Others
Grinding
Waterjet, Others
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Fundamental Issues
Fundamental reasons fabrication must be different at microscale
Metrology
MEMS overview
MICRO-ELECTRO-MECHANICAL-SYSTEM
MICRO- 10-6 m scale ELECTRO- Electrical circuits/device MECHANICAL- Mechanical structures/device Parasite on matured IC fabrication processes
Miniaturization Engineering
Thermal Science
Chemistry
Optics
Micro-thermal actuator
Micro Mirror
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nm
0.1mm
10mm
1mm
100mm
10 m
atom
DNA virus
People
nanotechnology
microsystems meso
macrosystems
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1947 1 transistor
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Cost Reduced
Batch Fabrication Larger wafer in diameter
Compatibility
Integration with IC/ electronics Capability of Arrays
Speed Increased
Shorter distance between elements
Avoidable Drawbacks
Reduce RC delay
Rigidity Enhanced
Very High Resonant Frequency Mostly Single Crystal Silicon. No Fatigue!
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http://www.aero.org/publications/helvajian/helvajian-4.html
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This picture comes from an excellent introductory discussion about IC fabrication at: icknowledge.com 13/ 50
Source: icknowledge.com
# of transistors
42 000 000
Line width:
P4 die size: US dime size
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www.evgroup.com
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www.ti.com
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http://travel.howstuffworks.com/turbine.htm
Mehra, A, etc.,A six-wafer combustion system for a silicon micro gas turbine engine, Microelectromechanical Systems, Journal of , Volume: 9 , Issue: 4 , Dec. 2000 Mehra, A, etc.,Microfabrication of high-temperature silicon devices using wafer bonding and deep reactive ion etching, Microelectromechanical Systems, Journal of , Volume: 8 , Issue: 2 , June 1999
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Micro-manufacturing
K. Pister, Berkeley
MIT microfab facility (Building 39) ICL IC Fab TRL MEMS EML mFluidics Class 10 Class 100 Class 1000
Acid hood
Wafer Stepper
Coater
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Clean rooms
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Process matrix
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Typical Materials
Silicon (Si)
Polymers
Doped Si
Poly silicon
Silicon oxide
Silicon nitride
Ceramics
PZT
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W. Tang - Darpa
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Micro-Fabrication Overview
For typical processes
2D
Wafers
Deposition
Oxidation or Deposition
Lithography
Add resist Transfer pattern Remove resist Repeat as Necessary
Etch
Wet isotropic or Wet anisotropic or RIE
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Silicon Wafers
Czochrolski method
http://www.msil.ab.psiweb.com/english/msilhist4-e.html
Molten Si bath
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Silicon Wafers
Structural properties compared to Steel / Aluminum:
Density sut Material Silicon Steel [1020] g/cc 2.33 7.87 Mpa 4000 420 310 E GPa 130 205 69 CTE x 10-6 4.2 12 24
Resistance Conductors
Semi-conductors
Insulators
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Si Base Wafer Oxide Si Base Wafer 2nd Si Wafer Si Base Wafer Si Base Wafer SOI
2.
3. 4.
Grow oxide
Bond 2nd Si wafer to oxide Grind top wafer to size
5.
Repeat if necessary
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Subtractive
Evaporation Sputtering
Chemical
CVD
Spin-on
www.memspi.com
MEMS
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Oxidation
Forming Silicon Dioxide by oxidation
O2 chamber
3hr, 1000 C
O2 chamber Oxide
1m
Si Wafer
Si Wafer
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Oxidation
Forming Silicon Dioxide by oxidation
O2 chamber
3hr, 1000 C
O2 chamber Oxide
1m
Si Wafer
Si Wafer
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Si H 4 Si 2H 2
Typical CVD Furnace:
ICL, MIT
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Evaporation
Metal evaporated w/ electron beam Vacuum environment prevent oxidation, directional vapor travel
S. G. Kim, MIT
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Sputtering
Materials: Metals and dielectrics Requires high vaccuum Argon ions bombard material target
S. G. Kim, MIT
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Deposition Issues
Thermal compatibility
Conformality:
Conformal
Non-conformal
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Photolithography
Photoresist (PR) used to transfer patterns Viscous PR spun onto wafer
7mm Positive Thick Resist 1. Dispense, Spin 3500rpm 2. Pre-bake 90C 60min 3. UV mask expose 15 sec 4. Develop in aqueous solution 5. Post-bake 90C 30min
PR
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Photolithography
Expose PR to UV light thru mask
Positive resist destroy bonds, soluble Negative resist crosslinking, less soluble
We use:
PR Substrate
Positive
UV light Expose
Negative
Substrate
Mask
PR Reaction
Develop
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Photoresist
oxide, nitride
K. Pister, Berkeley
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Dry etch
Chemical reaction
Reactive ion etching (RIE) High res High cost Very directional Unlimited 2D geometries 0.1 10 microns/min
Low res
Low cost Hard to control direction
Limited 2D geometries
1 10s of microns/min
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Etch depth / surface uniformity problems Diffusion dependent Etch silicon wafer and deposited films
<111>
54.7
Etch ratios more than 100:1 silicon wafers only Crystal planes:
<100> Si
S. G. Kim, MIT
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Wafer Bonding
Combine complex shapes from multiple wafers Si-Si wafers
Si-Glass wafers
M. Schmidt, 2000
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Hint:
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Conclusion
Micro-fabrication is DIFFICULT: Many of them are still vibrant fields of research
Micro-fabrication is EXPENSIVE at developing stage: ~18k/ year @MIT
NEXT: Micro-actuation/sensing/metrology
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