Chapter - 4single Stage IC Amplifier (For IT Class)

SJTU Zhou Lingling 1
Chapter 4

Single Stage IC
Amplifiers
Outline
Introduction
Biasing mechanism for ICs
High frequency response
The CS and CE amplifier with active loads
High frequency response of the CS and CE amplifier
The CG and CB amplifier with active loads
The Cascode amplifier
The CS and CE amplifier with source(emitter)degeneration
Introduction
Design philosophy of integrated
circuits
Comparison of the MOSFET and the
BJT (Self-Study)
Design Philosophy of Integrated
Circuits
Strive to realize as many of the functions required
as possible using MOS transistors only.
Large even moderate value resistors are to be
avoided
Constant-current sources are readily available.
Coupling and bypass capacitors are not available to
be used, except for external use.
Design Philosophy of Integrated
Circuits
Low-voltage operation can help to reduce power
dissipation but poses a host of challenges to the
circuit design.

Bipolar integrated circuits still offer many exciting
opportunities to the analog design engineer.
Biasing mechanism for ICs
MOSFET Circuits
The basic MOSFET current source
MOS current-steering circuits
BJT Circuits
The basic BJT current source
Current-steering
Biasing mechanism for ICs(contd)
Current-mirror circuits with improved
performance
Cascode MOS mirrors
A bipolar mirror with base-current compensation
The wilson current mirror
The wilson MOS mirror
The widlar current source
The Basic MOSFET Current
Source
1
2
)
)
L W
L W
I
I
REF
o
=
The Basic MOSFET Current
Mirror
) 1 (
)
)
2 1
2
A
GS o
REF o
V
V V
I
L W
L W
I

+ =

Output Characteristic
o
A
o o
I
V
r R
2
2
= =
o
A
o o
I
V
r R
2
2
= =
MOS Current-Steering Circuits
4
5
4 5
1
3
3
1
2
2
) (
) (
) (
) (
) (
) (
L W
L W
I I
L W
L W
I I
L W
L W
I I
REF
REF
=
=
=
The Basic BJT Current Mirror
|
2
1
1
+
=
REF
o
I
I
A Simple BJT Current Source.
CQ
A
o
on BE CC
REF
REF o
I
V
r R
R
V V
I
I I
= =
=
~
02
) (
Current Steering
REF
REF
REF
REF
BE EB EE CC
REF
I I
I I
I I
I I
R
V V V V
I
3
2
4
3
2
1
2 1
=
=
=
=
+
=
Current-Mirror Circuits with
Improved Performance
Two performance parameters need to be
improved:
a. The accuracy of the current transfer ratio
of the mirror.
b. The output resistance of the current
source.
Cascode MOS Current Mirror
| |
2 3 3
2 3 3 3 3
) ( 1
o o m
o o mb m o o
r r g
r r g g r R
~
+ + + =
Current Mirror with Base-Current
Compensation
2
2
1
1
|
+
~
REF
o
I
I
The Wilson Bipolar Current Mirror
2
2
1
1
|
+
~
REF
o
I
I
2
o
o
r
R
|
~
The Wilson MOS Current Mirror
2 3 3 o o m o
r r g R ~
The Widlar Current Source
| |
o E m o
o
REF
E
T
o
r r R g R
I
I
R
V
I
) // ( 1
) ln(
t
+ ~
=
High Frequency Response
The high-frequency gain function
Determining the 3-dB frequency
By definition
Dominant-pole
Open-circuit time constants
The High-Frequency Gain Function
Directly coupled
Low pass filter
gain does not fall
off at low
frequencies
Midband gain A
M

extends down to
zero frequency
The High-Frequency Gain Function
Gain function

P1
,
P2
, .
Pn
are positive numbers representing
the frequencies of the n real poles.

Z1
,
Z2
, .
Zn
are positive, negative, or infinite
numbers representing the frequencies of the n real
transmission zeros.
) 1 ( )..... 1 ( ) 1 (
) 1 .....( ) 1 )( 1 (
) (
) ( ) (
2 1
2 1
Pn P P
Zn Z Z
H
H M
s s s
s s s
s F
s F A s A
e e e
e e e
+ + +
+ + +
=
=
Determining the 3-dB Frequency
Definition
or
Assume
P1
<
P2
< .<
Pn
and
Z1
<
Z2
<
.<
Zn

2
) (
M
H
A
A = e
dB A A
M H
3 ) ( = e
....)
1 1
( 2 ....)
1 1
( 1
2
2
2
1
2
2
2
1
+ + + + ~
Z Z P P
H
e e e e
e
Dominant pole
If the lowest-frequency pole is at least two octaves (a
factor of 4) away from the nearest pole or zero, it is
called dominant pole. Thus the 3-dB frequency is
determined by the dominant pole.
Single pole system,

1
1
/ 1
) (
P H
P
M
s
A
s A
e e
e
~
+
=
Open-circuit time constants

To obtain the contribution of capacitance C
i
Reduce all other capacitances to zero
Reduce the input signal source to zero
Determine the resistance R
io
seen by C
i
This process is repeated for all other capacitance in the
circuit.
=
i
io i
H
R C
1
e
Example for Time Constant
Analysis
High-frequency equivalent circuit of a MOSFET amplifier.
The configuration is common-source.
Example for Time Constant
Analysis
Circuit for determining the resistance seen by C
gs
and C
gd

The CS Amplifier with Active
Load
a. Current source acts as an active
load.
b. Source lead is signal grounded.
c. Active load replaces the passive
load.
Load
Small-signal analysis of the amplifier performed both directly on the circuit
diagram and using the small-signal model explicitly.
The intrinsic gain
o m vo
r g A =
Load
) // (
) (
2 1 1
1 2
2
1 1
o o m
o o
o
o m
o L
L
vo v
r r g
r r
r
r g
R R
R
A A
=
+
=
+
=
REF
A
o
I
V
r
2
2
=
The CE Amplifier with Active
Load
(a) Active-loaded common-emitter amplifier.
(b) Small-signal analysis of the amplifier performed both directly on the
circuit and using the hybrid-t model explicitly.
The CE Amplifier with Active
Load
Performance of the amplifier
Intrinsic gain

Voltage gain

o m vo
r g A =
o out
out
o m
o L
L
vo v
r R
R
r g
R R
R
A A
+
=
+
= ) (
High-Frequency Response of the
CS and CE Amplifier
Millers theorem.
Analysis of the high frequency response.
Using Millers theorem.
Using open-circuit time constants.

Millers Theorem
Impedance Z can be replaced by two impedances:
Z
1
connected between node 1 and ground
Z
2
connected between node 2 and ground
High-Frequency Equivalent-Circuit
Model of the CS Amplifier
Analysis Using Millers Theorem
Approximate equivalent circuit obtained by applying Millers theorem.
This model works reasonably well when R
sig
is large.
The high-frequency response is dominated by the pole formed by R
sig
and C
in
.
Analysis Using Millers Theorem

Using millers theorem the bridge capacitance C
gd

can be replaced by two capacitances which connected
between node G and ground, node D and ground.
The amplifier with one zero and two poles now is
changed to only one pole system.
The upper 3dB frequency is only determined by this
pole.
sig in
H
L m gd gs in
R C
f
R g C C C
t 2
1
) 1 (
'
=
+ + =
Analysis Using Open-Circuit Time
Constants

sig gs
R R =
' '
) 1 (
L L m sig gd
R R g R R + + =
Analysis Using Open-Circuit Time
Constants

'
L C
R R
L
=
The Situation When R
sig
Is Low

High-frequency equivalent circuit of a CS amplifier
fed with a signal source having a very low
(effectively zero) resistance.
sig
Is Low

Bode plot for the gain of the circuit in (a).
sig
Is Low

The high frequency gain will no longer be limited by
the interaction of the source resistance and the input
capacitance.
The high frequency limitation happens at the
amplifier output.
To improve the 3-dB frequency, we shall reduce the
equivalent resistance seen through G(B) and D(C)
terminals.
High-Frequency Equivalent Circuit
of the CE Amplifier

Equivalent Circuit with Thvenin
Theorem Employed

Two Methods to Determine the 3-
dB Frequency

Using Millers theorem

Using open-circuit time constants

) 1 (
'
L m in
R g C C C + + =
t
L
C L H
R C R C R C + + =
t t
t
Active-Loaded CG Amplifier

The body effect in the common-gate circuit can be fully accounted for
by simply replacing g
m
of the MOSFET by (g
m
+g
mb
)

Small-signal analysis
performed directly on
the circuit diagram with
the T model of (b) used
implicitly.
The circuit is not
unilateral.

Circuit to determine the output resistance.
Performance of the Active Loaded
CG Amplifier

Input resistance

Open-circuit voltage gain

Output resistance

0
1
) ( 1
v
L
mb m o mb m
L o
in
A
R
g g r g g
R r
R +
+
~
+ +
+
=
o mb m vo
r g g A ) ( 1 + + =
| |
o s m
s o mb m o out
r R g
R r g g r R
) 1 (
) ( 1
+ ~
+ + + =
Frequency Response of the Active
Loaded CG Amplifier

A load capacitance C
L
is also included.
Frequency Response of the Active
Loaded CG Amplifier

Two poles generated by two capacitances.
Both of the two poles are usually much
higher than the frequency of the dominate
input pole in the CS amplifier.
Active-Loaded Common-Base
Amplifier

Small-signal analysis performed directly on the circuit diagram with the
BJT T model used implicitly
Performance of the Active Loaded
CB Amplifier

Input resistance


Output resistance

o m
L
e
L o
L o
e in
r g
R
r
R r
R r
r R + ~
|
|
.
|
\
|
+ +
+
~
) 1 (|
o m vo
r g A + =1
) // 1 (
) 1 (
'
t
r R g r
R r g r R
e m o
e o m o out
+ ~
+ + =
Comparisons between CG(CB) and
CS(CE)
Open-circuit voltage gain for CG(CB) almost equals
to the one for CS(CE)
Much smaller input resistance and much larger
output resistance
CG(CB) amplifier is not desirable in voltage
amplifier but suitable as current buffer.
Superior high frequency response because of the
absence of Millers effects
Cascode amplifier is the significant application for
CG(CB) circuit
The Cascode Amplifier

About cascode amplifier
Cascode configuration
A CG(CB)amplifier stage in cascade with a CS(CE)
amplifier stage
Treated as single-stage amplifier
Significant characteristic is to obtain wider bandwidth but
the equal dc gain as compared to CS(CE) amplifier
The MOS cascode
The BJT cascode
The MOS Cascode

Q
1
is CS configuration and Q
2

is CG configuration.
Current source biasing.
Small Signal Equivalent Circuit

The circuit prepared
for small-signal
analysis with various
input and output
resistances indicated.
Small Signal Equivalent Circuit

The cascode with the output
open-circuited
Performance of the MOS Cascode

Input resistance


The cascoding increases the magnitude of the open-
circuit voltage gain from A
o
to A
o
2

Output resistance
=
in
R
2
) (
o m vo
r g A =
1 0 o out
r A R ~
Frequency Response of the MOS
Cascode

Effect of cascoding on
gain and bandwidth in the
case R
sig
=0.
Cascoding can increase
the dc gain by the factor
A
0
while keeping the
unity-gain frequency
constant.
Note that to achieve the
high gain, the load
resistance must be
increased by the factor A
0
.
The BJT Cascode

The BJT cascode amplifier.
It is very similar to the MOS
cascode amplifier.
The BJT Cascode

The circuit prepared
for small-signal analysis
with various input and
output resistances
indicated.
Note that r
x
is
neglected.
The BJT Cascode

The cascode with the
output open-circuited.
Frequency Response of the BJT
Cascode

Note that in addition to the BJT capacitances C
t
and C
, the capacitance between

the collector and the substrate C
cs
for each transistor are also included.
The CS and CE Amplifier with
Source (Emitter) Degeneration

A CS amplifier with a source-
degeneration resistance R
s

The CS and CE Amplifier with
Source (Emitter) Degeneration

Circuit for small-signal analysis.
Circuit with the output open to determine A
vo
.
Performances of the CS Amplifier
with Source Degeneration

Input resistance

Output resistance

Intrinsic voltage gain

The resistance R
s
has no effect on A
vo
Short-circuit transconductance
=
in
R
] ) ( 1 [
s mb m o out
R g g r R + + ~
o m vo
r g A =
s mb m
m
m
R g g
g
G
) ( 1 + +
=
Performances of the CS Amplifier
with Source Degeneration

R
s
reduces the amplifier tranconductance and
increases its output resistance by the same factor.

This factor is the amount of negative feedback
Improve the linearity of amplifier.
] ) ( 1 [
s mb m
R g g + +
s mb m i
gs
R g g v
v
) ( 1
1
+ +
~
High Frequency Equivalent Circuit

Frequency Response

Determining the resistance R
gd
seen by the capacitance C
gd
.
The CE Amplifier With an Emitter
Resistance

Emitter degeneration is more
useful than source degeneration.
The reason is that emitter
degeneration increases the input
resistance of the CE amplifier.
Resistance

The presence of r
o

reduces the effect of R
e

on increasing R
in
.
This is because r
o

shunts away some of the
current that would have
flowed through R
e.
o L
e e in
r R
R r R
+
+ + + ~
1
1
) 1 ( ) 1 ( | |
Resistance

The output resistance R
o
is
identical to the value of R
out

for CB circuit.
) 1 (
e m o o
R g r R + ~
Summary of the CE Amplifier With
an Emitter Resistance

Including a relatively small resistance R
e
in the emitter of
the active-loaded CE amplifier:
Reduces its effective transconductance by the factor (1+g
m
R
e
).
Increases its output resistance by the same factor.
Reduces the severity of the Miller effect and correspondingly
increases the amplifier bandwidth.

The input resistance R
in
is increased by a factor that
depends on R
L
.
Emitter degeneration increases the linearity of the
amplifier.
The Source (Emitter) Follower

Self-study
Read the textbook from pp635-641
Some Useful Transistor Pairing

The transistor pairing is done in a way that
maximize the advantages and minimizes the
shortcomings of each of the two individual
configurations.
The pairings:
The CD-CS, CC-CE and CD-CE configurations.
The Darlington configuration.
The CC-CB and CD-CG configurations.
The CD-CS, CC-CE and CD-CE
Configurations

Circuit of CDCS amplifier.
The voltage gain of the circuit will be a
little lower than that of the CS amplifier.
The advantage of this circuit lies in its
bandwidth, which is much wider than
that obtained in a CS amplifier.
The reason that widen the bandwidth is
the lower equivalent resistance between
the gate of Q
2
and ground.

Configurations

CCCE amplifier.
This circuit has the same
advantage compared with the
MOS counterpart.
The additional advantage is that
the input resistance is increased by
the factor equal to (1+
1
) .
Configurations

BiCMOS version of this CD
CE amplifier.
Q1 provides the amplifier with
infinite input resistance.
Q2 provides the amplifier with
a high g
m
as compared to that
obtained in the MOSFET circuit
and hence high gain.
The Darlington Configuration

The Darlington configuration.
The total =
1
2

The CC-CB and CD-CG
Configurations

A CCCB amplifier.
The CC-CB and CD-CG
Configurations

Another version of the CCCB
circuit with Q
2
implemented
using a pnp transistor.
The CC-CB and CD-CG
Configurations

A CD-CG amplifier.
The CC-CB and CD-CG
Configurations

A CCCB amplifier
Low frequency gain approximately equal to that
of the CB configuration.
The problem of low input resistance of CB is
solved by the CC stage.
Neither the CC nor the CB amplifier suffers from
the Millers effect, the CC-CB configuration has
excellent high-frequency performance.

Chapter - 4single Stage IC Amplifier (For IT Class)

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, the capacitance between

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