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Guillaume Huyet
GaAs 145 nm
GaAs 145nm
AlGaAs 1300nm
GaAs buffer
500nm
Si GaAs
Coupled
ES ES
GS GS
PUMP PUMP
PROBE PROBE
G(dB)
-2.0
∆
-2.5
-3.0 SC Pump Probe ES
-3.5 TC Pump GS Probe ES
-4.0 SC Pump Probe GS
TC Pump ES Probe GS
-4.5
-5.0
-5.5
-6.0
-20 0 20 40 60 80 100 120 140
Delay (ps)
Tunnelling Injection
• “Cold” electrons introduced to QD
ground states by direct or phonon-
assisted tunnelling
• Rate comparable to stimulated
emission rate
• Carrier distribution maintained
close to quasi-fermi distribution,
even at high injection levels
• Thus, carrier leakage and hot-
carrier effect minimised and
increased modulation BW
0
0.0
-2 Gain Regimes
10mA -0.2
-4 50mA
100mA Absorption Regime
-6 200mA -0.4
-8
-0.6
-4 -2 0 2 4 6 8 10 12 14 16 -4 -2 0 2 4 6 8 10 12 14 16
Delay (ps) Delay (ps)
600
0.3
-0.5 30mA 500
T 4V
D 5V
6V
7V
Reverse bias 8V
9V
10V
11V
0 20 40 60 80 100
Time (ps)
DC bias
delay
• Many application
– Millimeter waves
– Interconnect
– Time-division multiplexing
– Optical sampling
– Metrology, coherent combs
• The recent review commissioned by Patrick
Morrissey showed that Mode-Locked Quantum
Dot semiconductor lasers should be a key
technology developed by Tyndall with Farran
technology
Tr
Power [a.u]
Time [a.u]
Power
Tr/2
4.3mm
Wavelength
I
-V
power
gain abs Frequency
0 25
-20 20
RF Linewidth (kHz)
Power (dBm)
-40 15
-60 10
-80 5
-100 0
9370 9371 9372 9373 9374 1 2 3 4
Frequency (MHz) Harmonic number
Power (dBm)
-60
be applied
Frequency (GHz)
40
Linewidth (MHz)
30
∆ω 0
10
0.5
0
-100 -80 -60 -40 -20 0 20 40 60 80
Mode number
1.0 V
• The minimum linewidth 2.0 V
∆ω0 behaves in a similar 2
10 ∆ωn = ∆ω0 + ( n − n0 ) ∆ωRF ,1
2
manner to CW lasers
Linewidth (MHz)
– a Schawlow-Townes-
like dependence with a
rebroadening at the 1
10
high currents:
a
∆ω0 ~ +εP
P
0
10
0 1 2 3 4
Optical power (mW)
Power
Wavelength
Master Laser Slave Laser
-10
Black line: free-running
-20 Colored lines: injected MLL
Optical Power (dBm)
-30
• Optical spectrum narrowing
-40
-50
-60
1286 1288 1290 1292 1294 1296
black line: free-running,
Wavelength (nm)
1
red line:1 single-mode injected
Normalized Power
(10 times smaller)
0.6 0.6
Injection
0.4 0.4
• Red shift
0.2 0.2
0 0
0 20 40 1295 1290 1300
Dynamics of Quantum Dot Devices
Autocorrelation Time (ps) for Novel Photonics
WavelengthApplications
(nm)
Dual-mode injection
Power
Wavelength
[Delfyett]
Dynamics of Quantum Dot Devices for Novel Photonics Applications
Dual-mode injection
-20 1 1
-25
Normalized Intensity
0.8 0.8
Normalized Power
Optical Power (dBm)
-30
-35
0.6 0.6
-55
0 0
1288 1290 1292 1294 1296 1298 1300 1302 0 20 40 1290 1295 1300
Wavelength (nm) Autocorrelation Time (ps) Wavelength (nm)
15
black line: free-running,
RF linewidth (kHz)
• Optical spectrum narrowing 10 red line: dual-mode injected
and tunability 5
• TBP improvement 0
110
50 120 130 140 150 160 170 180 190 200
• Low timing jitter 40
Current (mA)
r etti JσT (fs)
30
PP
20
) sf (
10
Dynamics of Quantum
0
110 Dot
120 Devices
130 140for 150
Novel
160Photonics
170 180Applications
190 200
Current (mA)
Linewidth measurements
-20
Linewidth (MHz)
all modes have narrow linewidths of
~ 100 kHz (equal to that of the master 40
laser)
20
0
Dynamics of Quantum Dot Devices
230.5 for 231
Novel Photonics
231.5 Applications
232 232.5
Frequency (THz)
CAPPA
• Major multinational
based in the South of
Ireland