Chapter 5

Field-Effect Transistors (FETs)

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Content
Physical

operation and current-voltage

characteristics
DC analysis
Biasing in MOS amplifier circuit and basic
configuration

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Physical operation and

current -voltage characteristics

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Introduction to FET
FET: Field

Effect Transistor
There are two types

MOSFET: metal-oxide-semiconductor FET

JFET: Junction FET

MOSFET is

IGFET.

also called the insulated-gate FET or

Quite small
Simple manufacturing process
Low power consumption
Widely used in VLSI circuits(>800 million on a single IC chip)

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Device structure of MOSFET (n-type)

Source(S)

Oxide

Gate(G)

(SiO2)

n+

Drain(D)
Metal

Channel area

n+

p-type Semiconductor
Substrate (Body)
Body(B)

For normal operation, it is needed to create a

conducting channel between Source and Drain

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Creating a channel for current flow

An n channel can be induced at
the top of the substrate beneath
the gate by applying a positive
voltage to the gate
The channel is an
inversion layer
The value of VGS at which a
sufficient number of mobile
electrons accumulate to form a
conducting channel is called the
threshold voltage (Vt)
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Device structure of MOSFET (n-type)

L = 0.1 to 3 m
W = 0.2 to 100 m
Tox= 2 to 50 nm

Cross-section
view

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Classification of FET
According

to the type of the channel, FETs can

be classified as

MOSFET

N channel
P channel

Enhancement type
Depletion type
Enhancement type
Depletion type

JFET

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P channel

N channel
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Drain current under small voltage vDS

An NMOS transistor with vGS > Vt and with a small vDS
applied.
The channel depth is uniform and the device acts as a
resistance.
The channel conductance is
proportional to effective voltage,
or excess gate voltage, (vGS Vt) .
Drain current is proportional to
(vGS Vt) and vDS.

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10

Drain current under small voltage vDS

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Operation as vDS is increased

The induced channel acquires a tapered shape.
Channel resistance increases as vDS is increased.
Drain current is controlled by both of the two voltages.

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12

Channel pinched off

When

VGD = Vt or VGS - VDS = Vt , the channel is

pinched off

Inversion layer disappeared at the drain point

Drain current does not disappeared!

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Drain current under pinch off

The electrons pass through the pinch off area at very
high speed so as the current continuity holds, similar to
the water flow at the Yangtze Gorges

Pinched-off channel

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Drain current under pinch off

Drain

current is saturated and only controlled by

the vGS

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Drain current controlled by vGS

vGS

creates the channel.

Increasing

vGS will increase the conductance of

the channel.
At saturation region only the vGS controls the
drain current.
At subthreshold region, drain current has the
exponential relationship with vGS

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16

p channel device

Two reasons for readers to be

familiar with p channel device
Existence in discrete-circuit.
More important is the
utilization of complementary
MOS or CMOS circuits.

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17

p channel device

Structure of p channel device

The substrate is n type and the inversion layer is p type.
Carrier is hole.
Threshold voltage is negative.
All the voltages and currents are opposite to the ones of n
channel device.
Physical operation is similar to that of n channel device.

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Complementary MOS or CMOS

The PMOS transistor is formed in n well.

Another arrangement is also possible in which an n-type body is used and
the n device is formed in a p well.
CMOS is the most widely used of all the analog and digital IC circuits.

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Current-voltage characteristics
Circuit

symbol
Output characteristic curves
Channel length modulation
Characteristics of p channel device
Body effect
Temperature effects and Breakdown Region

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20

Circuit symbol

(a) Circuit symbol for the n-channel enhancement-type MOSFET.

(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel).
(c)

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Simplified circuit symbol to be used when the source is connected to the

body or when the effect of the body on device operation is unimportant.

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Output characteristic curves of NMOS

(a) An n-channel enhancementtype MOSFET with vGS and vDS

applied and with the normal
directions of current flow
indicated.
(b) The iDvDS characteristics for a
device with kn (W/L) = 1.0
mA/V2.
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Output characteristic curves of NMOS

Three distinct region
Cutoff region
Triode region
Saturation region
Characteristic equations
Circuit model
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23

Cutoff region
Biased voltage

vGS Vt
The transistor is turned off.

iD 0
Operating in cutoff region as a switch.

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24

Triode region

Biased voltage

vGS Vt
v DS vGS Vt

The channel depth changes from uniform to tapered

shape.

Drain current is controlled not only by vDS but also

by vGS
W
L
W
kn '
L

iD k n '

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1
2
(
v

V
)
v

v
t
DS
DS
GS
2

(vGS Vt )vDS
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process transconductance parameter

25

Triode region
Assuming that the draint-source voltage is
sufficiently small, the MOS operates as a linear
resistance
rDS

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v DS
iD
1

vGS VGS

W
kn '
VOV
L

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W
kn '
(VGS Vt )
L

26

Saturation region

Biased voltage

vGS Vt
v DS vGS Vt

The channel is pinched off.

Drain current is controlled only by vGS

W
iD k n ' vGS Vt ) 2
L
1
2

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Drain current is independent of vDS and behaves as

an ideal current source.
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27

Saturation region
The iDvGS characteristic for
an enhancement-type NMOS
transistor in saturation
Vt = 1 V, kn W/L = 1.0
mA/V2
Square law of iDvGS
characteristic curve.

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Channel length modulation

Explanation for channel length modulation
Pinched point moves to source terminal with the
voltage vDS increased.
Effective channel length reduced
Channel resistance decreased
Drain current increases with the voltage vDS
increased.

Current drain is modified by the channel

length modulation
W
2
iD 12 k n ' vGS Vt )
1vDS )
L

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Channel length modulation

The MOSFET parameter VA depends on the process technology and, for a

given process, is proportional to the channel length L.
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Channel length modulation

MOS transistors dont behave an ideal current
source due to channel length modulation.
The output resistance is finite.
iD
ro

v
DS

vGS const .

1
VA

I D
ID

The output resistance is inversely proportional to

the drain current.

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Large-signal equivalent circuit model

Large-signal equivalent circuit model of the n-channel

MOSFET in saturation, incorporating the output resistance
ro. The output resistance models the linear dependence of iD
on vDS
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Characteristics of p channel device

(a) Circuit symbol for the p-channel enhancement-type MOSFET.

(b) Modified symbol with an arrowhead on the source lead.
(c) Simplified circuit symbol for the case where the source is connected to the
body.

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Characteristics of p channel device

The MOSFET with voltages applied and the directions of

current flow indicated.
The relative levels of the terminal voltages of the
enhancement-type PMOS transistor for operation in the triode
region and in the saturation region.
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Characteristics of p channel device

Large-signal equivalent circuit model of the p-channel

MOSFET in saturation, incorporating the output resistance
ro. The output resistance models the linear dependence of iD
on vDS
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35

The body effect

In

discrete circuit usually there is no body effect due

to the connection between body and source terminal.
In IC circuit the substrate is connected to the most
negative power supply for NMOS circuit in order to
maintain the pn junction reversed biased.
The body effect---the body voltage can control iD

Widen the depletion layer

Reduce the channel depth
Threshold voltage is increased
Drain current is reduced

The

body effect can cause the performance

degradation.

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Temperature effects and breakdown region

Drain

current will decrease when the

W
temperature increase.
1
iD 2 k n ' vGS Vt ) 2
L
Breakdown
Avalanche

breakdown
Punched-through
Gate oxide breakdown

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37

MOS

RGS(DC)

MOS

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38

MOS

MOS

MOS
MOS

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39

MOS

MOS

MOS

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 DC analysis
Biasing in MOS amplifier circuit and basic
configuration

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MOSFET amplifier: DC analysis

1.

Assuming device operates in saturation thus iD

satisfies with iD~vGS equation.

2.

According to biasing method, write voltage loop

equation.

3.

Combining above two equations and solve these

equations.

4.

Usually we can get two value of vGS, only the one of

two has physical meaning.

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42

DC analysis
5. Checking

the value of vDS

i.

if vDSvGS-Vt, the assuming is correct.

ii.

if vDSvGS-Vt, the assuming is not correct. We shall

use triode region equation to solve the problem
again.

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43

Examples of DC analysis
The NMOS transistor is
operating in the saturation
region due to

Vt 2V

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VGD Vt

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Examples of DC analysis

Assuming the MOSFET operate in the saturation region

Checking the validity of the assumption
If not to be valid, solve the problem again for triode region
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The MOSFET as an amplifier

Basic structure of the
common-source amplifier

Graph determining the

transfer characteristic
of the amplifier
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46

The MOSFET as an amplifier and as a switch

Transfer characteristic
showing operation as an
amplifier biased at point Q.
Three segments:
vo
Time

XA---the cutoff region

segment
AQB---the saturation
region segment
BC---the triode region
segment
vI

vi
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Time

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47

Homework
April

2, 2008:

5.2 5.4 5.9 5.10

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Biasing in MOS amplifier circuits

Voltage

biasing scheme

Biasing by fixing voltage

(constant VGS)
Biasing with feedback resistor

Current-source

biasing

scheme

Disadvantage of fixing biasing

Fixing biasing may result in large ID variability due to deviation
in device performance
Current becomes temperature dependent
Unsuitable biasing method
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Biasing in MOS with feedback resistor

Biasing using a resistance in the source lead can reduce the

variability in ID
Coupling of a signal source to the gate using a capacitor CC1
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Biasing in MOS with current-source

Biasing the MOSFET using a

constant-current source I
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Implementing a constant-current
source using a current mirror
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Small-signal operation and models

The

ac characteristic

Definition of transconductance

Definition of output resistance

Definition of voltage gain

Small-signal

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model

Hybrid model

T model

Modeling the body effect

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52

The conceptual circuit

Conceptual circuit utilized to study
the operation of the MOSFET as a
small-signal amplifier.
Small signal condition

v gs 2(VGS Vt )

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53

The small-signal models

Without the channel-length

modulation effect
iD
gm
vGS

vGS VGS

W
k n ' VOV
L

transconductance
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With the channel-length

modulation the effect by
including an output resistance

vDS
ro
iD
J. Chen

iD I D

VA

ID

The small-signal models

The T model of the MOSFET

augmented with the drain-tosource resistance ro
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An alternative representation
of the T model

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Modeling the body effect

Small-signal equivalent-circuit model of a MOSFET in

which the source is not connected to the body.

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Single-stage MOS amplifier

Characteristic parameters

Three configurations

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Common-source configuration

Common-drain configuration

Common-gate configuration

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57

Definitions

Input resistance with no load

Input resistance

Rin

vi

ii

Open-circuit voltage gain

Voltage gain

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Avo

vo
Av
vi
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vo
vi

RL

RL

58

Definitions

Short-circuit current gain

Current gain

Ais

i
Ai o
ii

io
ii

Short-circuit transconductance gain

RL 0

Gm

v0
Open-circuit overall voltage gain Gvo
vsig
v0
G

Overall voltage gain

v
vsig
vx
R

Output resistance
out
ix v 0
sig

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io
vi

RL

RL 0

59

Relationships
Voltage

divided coefficient
vi
Rin
Rin
RL

Gv
Avo
vsig Rin Rsig
Rin Rsig
RL Ro
RL
Av Avo
RL Ro

Ri
Gvo
Avo
Ri Rsig

Avo Gm Ro

RL
Gv Gvo
RL Rout

Hence

the appropriate configuration should be chosen

according to the signal source and load properties,
such as source resistance, load resistance, etc

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Basic structure of the circuit

Basic structure of the circuit

used to realize single-stage
discrete-circuit MOS
amplifier configurations.

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The common-source amplifier

The simplest common-source
amplifier biased with constantcurrent source.
CC1 And CC2 are coupling
capacitors.
CS is the bypass capacitor.

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Equivalent circuit of the CS amplifier

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Equivalent circuit of the CS amplifier

Small-signal analysis performed directly on the amplifier circuit

with the MOSFET model implicitly utilized.
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Characteristics of CS amplifier
Input

resistance

Rin RG

Av g m (ro // RD // RL )

Voltage

gain

Overall

voltage gain Gv

Output

resistance

Rout ro // RD

Summary of CS amplifier

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RG
g m ( RD // RL // ro )
RG Rsig

Very high input resistance

Moderately high voltage gain
Relatively high output resistance
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The CS amplifier with a source resistance

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66

Small-signal equivalent circuit with ro neglected

Voltage gain
Av

g m ( RD // RL )
1 g m RS

Overall voltage gain

RG
g m ( RD // RL )
Gv
RG Rsig 1 g m RS

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RS takes the effect of

negative feedback
Gain is reduction by
(1+gmRS)

67

The Common-Gate amplifier

Biasing with constant
current source I
Input signal vsig is
applied to the source
Output is taken at the
drain
Gate is signal grounded
CC1 and CC2 are coupling
capacitors

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68

The CG amplifier

A small-signal equivalent
circuit
T model is used in
preference to the model
Ro is neglecting
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The CG amplifier fed with a current-signal input

Voltage gain

Av g m ( RD // RL )

Overall voltage gain

g m ( RD // RL )
Gv
1 g m Rsig

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Summary of CG amplifier
Noninverting

amplifier
Low input resistance
Relatively high output resistance
Current follower
Superior high-frequency performance

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The common-drain or source-follower amplifier

Biasing with current source

Input signal is applied to gate, output signal is taken at the source

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The CD or source-follower amplifier

72

Small-signal equivalentcircuit model

T model makes analysis
simpler
Drain is signal grounded
Overall voltage gain

RG
ro // RL
Gv
1
RG Rsig r // R 1
o
L
gm
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Circuit for determining the output resistance

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Summary of CD or source-follow amplifier

Very

high input resistance

Voltage gain is less than but close to unity
Relatively low output resistance
Voltage buffer amplifier
Power amplifier

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Summary and comparisons

The

CS amplifier is the best suited for obtaining the

bulk of gain required in an amplifier.

Including

resistance RS in the source lead of CS

amplifier provides a number of improvements in its
performance.

The

low input resistance of CG amplifier makes it useful

only in specific application. It has excellent highfrequency response. It can be used as a current buffer.

Source

follower finds application as a voltage buffer and

as the output stage in a multistage amplifier.

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The internal capacitance and high-frequency model

Internal

The gate capacitive effect

capacitances

Triode region
Saturation region
Cutoff region
Overlap capacitance

The junction capacitances

Source-body depletion-layer capacitance

drain-body depletion-layer capacitance

High-frequency
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model
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The gate capacitive effect

MOSFET operates at triode region

C gs C gd 12 WLCox

MOSFET operates at saturation region

C gs 23 WLCox

C gd 0

MOSFET operates at cutoff region

C gs C gd 0

C gb WLCox

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78

Overlap capacitance

Overlap capacitance results from the fact that the source and
drain diffusions extend slightly under the gate oxide.
The expression for overlap capacitance C WL C
ov
ov ox
Typical value Lov 0.05 0.1L
This additional
component should be
added to Cgs and Cgd in all
preceding formulas

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The junction capacitances

Source-body depletion-layer capacitance

C sb

C sb 0
V
1 SB
Vo

drain-body depletion-layer capacitance

Cdb

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C db 0
V
1 DB
Vo

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High-frequency model

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81

High-frequency model
The equivalent circuit for the
case in which the source is
connected to the substrate
(body)

The equivalent circuit model with

Cdb neglected (to simplify analysis)

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The MOSFET unity-gain frequency

Current

gain
Io
gm

I i s (C gs C gd )

Unity-gain

frequency

gm
fT
2 (C gs C gd )

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The depletion-type MOSFET

Physical

structure

The structure of depletion-type MOSFET is

similar to that of enhancement-type MOSFET with
one important difference: the depletion-type
MOSFET has a physically implanted channel
There is no need to
induce a channel
The depletion MOSFET
can be operated at both
enhancement mode and
depletion mode

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Circuit symbol for the n-channel depletion-MOS

Simplified circuit symbol applicable

for the case the substrate (B) is
connected to the source (S).

Circuit symbol for the nchannel depletion-type

MOSFET

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85

Characteristic curves

Expression of characteristic equation

W
iD k n ' vGS Vt ) 2
L
1
2

Drain current with vGS 0

I DSS 12 k n '
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the iDvGS characteristic

in saturation

W 2
Vt
L
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The iDvGS characteristic in saturation

Sketches of the iDvGS characteristics for MOSFETs of enhancement and

depletion types
The characteristic curves intersect the vGS axis at Vt.
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The output characteristic curves

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88

The junction FET

D
Depletion
layer

N-channel

n-type
Semiconductor

S
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G
S

89

Physical operation under vDS=0

D
P+

P+

P+

UGS = 0

P+

P+

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UGS < 0
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UGS = UGS(off)

90

The effect of UDS on ID for UGS(off) <UGS < 0

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Summary of semiconductor devices

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92

Diode,

BJT and FET are nonlinear devices

made of semiconductor, mostly silicon
Diode
A diode allows current to flow in forward direction
and hence can perform functions such as
rectification, demodulation/detection, switch etc.
The reverse current may become dramatically
large at breakdown, such phenomena can be used
as voltage regulator

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93

Bipolar Junction Transistor

A BJT has three terminals: base, emitter and collector

The collector current is controlled by voltage/ current on
the base-emitter junction and is almost independent on
collector voltage.
It can perform functions such as amplification and switch,
etc.
A BJT should be properly biased for normal operation
There are three basic configurations, each has different
performance (input/output resistance, gain, high frequency
response, etc)

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94

Field

Effect Transistor

A FET has three terminals: gate, source and drain

The drain current is controlled by gate voltage and
is almost independent on drain voltage.
It can perform functions such as amplification, logic
calculation and switch, etc.
A FET should be properly biased for normal
operation
There are three basic configurations, each has
different performance (input/output resistance,
gain, high frequency response, etc)

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95

As

the microelectronics develops, more and

more functions are fulfilled by IC chips
The discrete devices and circuits, however, are
still very important not only for practical
applications, but also for better understanding
and design of LSICs
Quantitative calculation is sometimes
complicated but not difficult
As long as you know the parameter definitions
clearly, results can be derived KCL, KVL, etc
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96

Homework
April
5.25

01/24/15

6, 2010:

5.40 5.47 5.63; 5.116

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