Nes Mohan Power Electronics PPT Slides Ch26

LectureNotes
EmergingDevices
Outline
PowerJFETDevices
FieldControlledThyristor
MOSControlledThyristor
HighVoltageIntegratedCircuits/DiscreteModules
NewSemiconductorMaterials
CopyrightbyJohnWiley&Sons2003
EmergingDevices1
PowerJFETGeometry
N-channel JFET
gate
source
D
+
l
gs
Recessed gate
JFET
cross-section.
channel
l
gd
+
N
P-channel JFET
drain
GatesourcegeometryhighlyinterdigitatedasinMOSFETs.
Widthw=mstoafewtensofms;lc<w;lgsminimized.
lgdsetbyblockingvoltageconsiderations.
S
EmergingDevices2
PowerJFETIVCharacteristics
Output characteristics
iD
Transfer curve.
V
GS
VGS1
VGS2
VGS3
VGS4
vD
S
blocking
gain
VGS
v
D
S
PowerJFETisanormallyondevice.Substantialcurrentflowswhengate
sourcevoltageisequaltozero.
OppositetoBJTs,MOSFETs,andIGBTswhicharenormallyoffdevices.
EmergingDevices3
ControllingPotentialBarrierinJFETs
electron
V
potential
-V
=0
DS
(x)
CS
x
increasing
Suppresspotentialbarrierby
increasingVDSatfixedVGS.
WhenVDS>|VGS|substantial
draincurrentsflow.
V
DS
|VGS|>|Vp|(pinchoffvoltage)
potentialbarriertoelectronflow
fromsourcetodraincreated.No
draincurrentcanflow.
+
V
DD
Blockingcapabilitylimitedby
magnitudeofelectricfieldindrift
region.Longerdriftregionshave
largerblockingvoltagecapability.
+
P
E
GS
V (x)
CS
E
+
DS
V
GG
N
P
NormallyoffJFETcreatedby
havingnarrowenoughchannel
widthsothatthechannelispinched
offatzerogatesourcevoltage.
EmergingDevices4
JFETOnandOffStates
JFETinonstate
JFET in blocking state
D
depletionregion
depletion
region
+
V
DD
P+
+
V
DD
-
P+
P+
P+
Channelopenbetweendrainandsource.
VGG
Channelpinchedoff(closed)between
drainandsource.
EmergingDevices5
BipolarStaticInductionTransistor(BSIT)
BSIT in blocking state
JFETinonstate
D
depletionregion
D
depletion
region
+
VDD
-
P+
+
V
P+
DD
P+
P+
Channelwidthandchanneldopingchosen
sothatatzerogatesourcevoltage,
depletionlayersofgatechanneljunction
pinchoffthechannel.
NarrowerchannelthannormallyonJFET.
GG
Forwardbiasgatechanneljunctionto
reducedepletionregionwidthandopenup
channel.
Substantialcurrentflowintogate.
EmergingDevices6
JFETSwitchingCharacteristics
EquivalentcircuitsofJFETSnearlyidenticaltothoseofMOSFETs
SwitchingwaveformsnearlyidenticaltothoseofMOSFETsincludingvaluesof
variousswitchingtimeintervals
JFETVGSstartsatnegativevaluesandstepstozeroatturnonwhileMOSFETVGSstarts
atzeroandstepstopositivevalueatturnon
FETonstatelossessomewhathigherthanforMOSFETtechnologyrelatednotfundamental
NormallyoffJFET(BipolarstaticinductiontransistororBSIT)switchingcharacteristics
moresimilartothoseofBJT
DifferencesbetweenBSITandBJTobservablemainlyatturnoff
1.BSIThasnoquasisaturationregionandthusonlyonecurrentfalltime(nocurrenttailing)at
turnoff.
2.OverallturnofftimesofBSITshorterthanforBJT
3.DifferencesduetofactthatBSIThasnoinlinepnjunctionthatcanblocksweepoutof
excesscarriersasdoesBJT
EmergingDevices7
FieldControlledThyristor(FCT)
VerticalCrosssection
Circuitsymbol
anode
cathode
gate
+
+
gate
cathode
+
P
anode
Injecting contact -
unique feature of FCT
Sometimestermedabipolarstaticinductionthyristor(BSIThy).
EmergingDevices8
FCTIVCharacteristics
i
A
V
FCThasanormallyon
characteristic.
GK
V
GK2
GK1
GK3
Canbemadetohavea
normallyoff
characteristic.
-V
RM
V
AK
V
AK
blocking gain
1.Reducechannel
widthsothatzerobias
depletionlayerwidth
ofgatechannel
junctionpinchesoff
channel
2.Thentermeda
bipolarstaticinduction
thyristor(BSIThy).
V
GK
EmergingDevices9
PhysicalOperationofFCT
FCTessentiallyapowerJFETwithaninjectingcontactat
thedrain
Injectingcontactcausesconductivitymodulationofdrain
driftregionandresultsinmuchloweronstatelosses
Atturnoff,gatedrawslargenegativecurrentsimilartoa
GTObecauseofstoredchargeindriftregion
Cascodeswitching
circuit.
Implementanormally
offcompositeswitch.
R1andR2insurethat
voltageacross
MOSFETnotoverly
large.Permitsuseof
lowvoltagehigh
currentdevice.
HV
FCTnotalatchingswitchasisaGTO.FCThasno
regenerativeaction.
FCTcanbemadeanormallyoffdevicebyusingnarrow
channelwidthssothatzerobiaswidthgatedepletionlayer
pinchsoffchannel.
R1
Vcontrol
R2
R1 >> R2 1-10 Meg

EmergingDevices10
FCTSwitchingCharacteristics
FCTswitchingwaveformsqualitativelysimilartothyristororGTO
includinglargenegativegatecurrentatturnoff.
FCThasgatecontrolledturnonandturnoffcapabilitiessimilartoGTO.
FCTswitchingtimessomewhatshorterthanGTO.
GatedrivemustbecontinuouslyappliedtoFCTbecauseFCThasno
latchingcharacteristic.
FCThasmuchlargerreapplieddv/dtratingthanGTObecauseoflackof
latchingaction.
FCThasdi/dtlimitsbecauseoflocalizedturnonandthenexpansionof
turnedonregionacrossentiredevicecrosssection.
EmergingDevices11
JFETBasedDevicesVsOtherPowerDevices
BlockingvoltagecapabilityofJFETscomparabletoBJTsandMOSFETs.
JFETonstatelosseshigherthanMOSFETstechnologylimitation.
SwitchingspeedsofnormallyonJFETsomewhatslowerthanthoseofMOSFETtechnology
limitation.
BSITswitchingtimescomparabletoBJTsinprincipleshouldbefasterbecauseoflackofin
linepnjunctiontrappingstoredchargeatturnoff.
NosecondbreakdowninnormallyonJFETs,similartoMOSFETs.
BSITsandBSIThyhaveandpossiblylimitations.
JFETbasedpowerdevicesmuchlesswidelyusedbecauseofnormallyoncharacteristic.This
hasalsoslowedresearchanddevelopmenteffortsinthesedevicescomparedtootherdevices.
EmergingDevices12
PMCT(PtypeMOScontrolledThyristor
Unitcellverticalcrosssection
SiO
2
conductor
CompleteMCTcomposedof
tensofthousandsofidentical
cellsconnectedinparallel.
G
+
N
+
P
P
P
ONFET
ONFET
channel
channel
Pdesignationreferstodoping
ofthelightlydopedPlayer
whichcontainsthedepletion
layeroftheblockingjunction.
OFFFET
channels
+
N
NotethatONandOFFFETs
arepositionedattheanodeend
ofthedevice.
EmergingDevices13
PMCTEquivalentCircuit&CircuitSymbol
PMCTequivalentcircuit
PMCTcircuitsymbol
anode
anode
A
+
gat
gate
OFF-FET
AK
ON-FET
cathode
cathode
PMCTusedwithanodegrounded.
Gateanodevoltageisinputdrivevoltage.
UsePMCTincircuitswithnegativevoltages.
EmergingDevices14
NMCT(NtypeMOScontrolledThyristor
VerticalcrosssectionofNMCTunitcell
NMCTcomposedof
thousandsofcells
connectedelectricallyin
parallel.
SiO
2
conductor
+
P
Ndesignationreferstothe
Nlayerwhichcontainsthe
depletionlayerofthe
blockingjunction.
N
ONFET
ONFET
channel
channel
P
OFFFET
channels
NotethattheONandOFF
FETsarepositionedat
thecathodeendofthe
device.
EmergingDevices15
NMCTEquivalentCircuit&CircuitSymbol
NMCTequivalentcircuit
NMCTcircuitsymbol
anode
anode
ON-FET
gate
OFF-FET
gat
cathode
cathode
NMCTusedwithcathodegrounded.
Gatecathodevoltageisinputdrivevoltage.
UseNMCTincircuitswithpositivevoltages.
EmergingDevices16
GatecontrolledTurnonofMCTs
TurnonMCTbyturningontheONFET
PositivegatecathodevoltageforNMCT
NegativegateanodevoltageforPMCT
ThesepolaritiesofgatevoltageautomaticallykeeptheOFFFETincutoff.
ONFETdeliversbasecurrenttothelowgainBJTinthethyristorequivalentcircuit
and activatesthatBJT.
PNPtransistorintheNMCT
NPNtransistorinthePMCT
Lowgaintransistoractivatesthehighergaintransistorandthyristorlatcheson.
Oncehighergaintransistor,whichisinparallelwithONFETisactivated,current
isshuntedfromONFETtotheBJTandtheONFETcarriesverylittlecurrentin
theMCTonstate.
Only510%ofthecellshaveanONFET.
Cellsareclosepacked.Withinoneexcesscarreierdiffusionlengthofeachother.
AdjacentcellswithoutanONFETturnedonviadiffusionofexcesscarriersfrom
turnedoncell.
EmergingDevices17
GatecontrolledTurnoffofMCTs
TurnMCToffbyturningontheOFFFET
NegativegatecathodefortheNMCT
PositivegateanodevoltageforthePMCT
ThesegatevoltagepolaritiesautomaticallykeeptheONFETincutoff.
OFFFETshuntsbasecurrentawayfromthehighergainBJTinthethyristor
equivalentcircuitandforcesittocutoff.
NPNtransistorintheNMCT.
PNPtransistorinthePMCT.
CutoffofhighergainBJTthenforceslowgainBJTintocutoff.
EveryMCTcellhasanOFFFET.
OFFFETkeptactivatedduringentireMCToffstatetoinsurenoinadvertent
activationofthethyristor.
EmergingDevices18
MaximumControllableAnodeCurrent
IfdrainsourcevoltageofOFFFETreachesapproximately0.7Vduringturnoff,
thenMCTmayremainlatchedinonstate.
HighergainBJTremainsonifOFFFETvoltagedrop,whichisthebaseemitter
voltageoftheBJTreaches0.7volts.
Thusmaximumonstatecurrentthatcanbeturnedoffbymeansofgatecontrol.
PMCThaveapproximatelythreetimeslargergatecontrolledanodecurrent
ratingthanasimilar(samesizeandvoltagerating)NMCT.
OFFFETofthePMCTisannchannelMOSFETwhichhasthreetimeslarger
channelmobilitythanthepchannelOFFFEToftheNMCT.
EmergingDevices19
RationaleofOFFFETPlacement
PMCTcrosssectionshowing
rationaleforOFFFETplacement
Turning off the BJT with the larger

value of most effective way to
break the latching condition
1 + 2 = 1
BJT with the smaller base width has
the larger value of .
P-MCT ; PNP BJT has smaller
base
width
N-MCT ; NPN BJT has smaller
base width
OFF-FET put in parallel with baseemitter of larger gain BJT so that
OFF-FET shorts out base-emitter
when the FET is activated.
A
G
N
P
OFF-FET
P+
+
P
OFF-FET
N
P
Wider of two base regions

N
EmergingDevices20
MCTSwitchingWaveforms
Gate-cathode
NMCTStepdownConverter
voltage
V
Tn
I
o
V
Tp
t
V
d
N-MCT
d,off
fv1
Anode-cathode
voltage
rv1
fv2
V
d
PMCTStepdownConverter
t
rv2
Anode
current
I
o
V
d
P-MCT
t
ri2
fi1
t
d,on
t
ri1
t
fi2
EmergingDevices21
MCTTurnonProcess
Turnondelaytimetd,ontimerequiredforgatevoltagetoreachONFETthreshold
startingfromreversebiasvalueofVGG,off
Currentrisetimetri1andtri2
tri1;ONFETturnsonacceptingallthecurrentthegatedrivevoltagewillpermit.
ONFETinitsactiveregion.
tri2;NPNandPNPBJTsturnonandcurrentshuntedawayfromONFET.BJTs
andONFETintheiractiveregions.
Voltagefalltimetfv1andtfv2
tfv1;BJTsintheiractiveregionssovoltagefallinitiallyfast.
tfv2;BJTsinquasisaturation,sotheirgainisreducedandrateofvoltagefall
decreases.
Atendofvoltagefalltimeinterval,BJTsenterhardsaturationandMCTisin
theonstate.
Gatecathodevoltageshouldreachfinalonstatevalueintimesnolongerthana
specifiedmaximumvalue(typically200nsec).Insurethatallparalleledcellsturnon
atthesametimetominimizecurrentcrowdingproblems.
Keepgatecathodeatonstatevalueforthedurationoftheonstatetominimize
likelyhoodofinadvertantturnoffofsomecellsifcurrentissubstantiallyreduced
duringonstate.
EmergingDevices22
MCTTurnoffProcess
Turnoffdelaytimetd,offtimerequiredtoturnofftheONFET,activatetheOFF
FET,andbreakthelatchingconditionbypullingtheBJTsoutofhardsaturation
andintoquasisaturation.
Requiresremovalofsubstantialamountofstoredcharge,especiallyinthebase
regionsofthetwoBJTs(n1andp2thyristorlayers).
Voltagerisetimestrv1andtrv2
trv1;timerequiredtoremovesufficientstoredchargesothatBJTsleavequasi
saturationandenteractiveregionandblockingjunction(J2)becomesreverse
biased.
trv2;BJTsinactiveregionandtheirlargergaincauses anodevoltagetorapidly
completegrowthtopowersupplyvoltageVd
Currentfalltimetfi1andtfi2
tfi1;InitialrapidfallincurrentuntilhighgainBJT(NPNBJTinthePMCT
equivalentcircuit)goesintocutoff.
tfi2;storedchargestillremaininginbase(driftregionofthyristor)ofthe
lowgainBJTremovedinthisinterval.Theopenbasenatureoftheturnoff
casuseslongertimeintervalgivinga"tail"totheanodecurrentdecay.
Gatecathodevoltagekeptatoffstatevalueduringentireoffstateintervalto
preventaccidentalturnon.
EmergingDevices23
MCTOperatingLimitations
Imaxsetbymaximumcontrollableanodecurrent.
Presentlyavailabledeviceshave50100Aratings.
Vmaxsetbyeitherbreakovervoltageofthyristor
sectionorbreakdownratingoftheOFFFET.
Presentlyavailabledevicesratedat600V.10002000
vdevicesprototyped.
MCTsafeoperatingarea.Very
conservativelyestimated.
Anode
current
I
max
dvDS
dt limitedbymechanismsidenticaltothosein
thyristors.Presentlyavailabledevicesratedat500
1000V/sec.
diD
dt limitedby potential currentcrowdingproblems.
Presently available devi
ces rated at 500
A/sec.
Anode-cathode voltage
BO
EmergingDevices24
HighVoltage(Power)IntegratedCircuits
ThreeclassesofpowerICs
1.Smartpowerorsmart/intelligentswitches
Verticalpowerdeviceswithonchipsenseandprotectivefeaturesand
possiblydriveandcontrolcircuits
2.Highvoltageintegratedcircuits(HVICs)
ConventionalICsusinglowvoltagedevicesforcontrolanddrive
circuitsandlateralhighvoltage powerdevices
3.Discretemodules
Multiplechipsmountedonacommonsubstrate.Separatechipsfor
drive,control,andpowerswitch andpossiblyotherfunctions.
PICrationale
Lowercosts
Increasedfunctionality
Higherreliability
Lesscircuit/systemcomplexity
EmergingDevices25
IssuesFacingPICCommercialization
Technicalissues
Electricalisolationofhighvoltagedevicesfromlowvoltagecomponents
Thermalmanagementpowerdevicesgenerallyoperateathigher
temperaturesthanlowpowerdevices/circuits.
OnchipinterconnectionswithHVconductorrunsoverlowvoltage
devices/regions.
Fabricationprocessshouldprovidefullrangeofdevicesandcomponents
BJTs,MOSFETs,diodes,resistors,capacitors,etc.
Economicissues
Highupfrontdevelopmentcosts
RelativecostofthethreeclassesofPICs
Needforhighvolumeapplicationstocoverdevelopment
expenses.
EmergingDevices26
DielectricIsolation
Si0 2
N+
B
N+
Dielectricallyisolatedtubs
SiO2isolationandsilicon
thinfilmovergrowth.
N
+
Si wafer
Si wafer
SiO
2
Si wafer with SiO
Si wafer with SiO
2
Wafers bonded together
metallurgically
Top Si wafer thinned

Si wafer
for circuit fabrication
Si wafer with SiO

Si wafer with SiO
Waferbondingand
subsequentwafer
thinning.
Bottom wafer
Clean, flat surfaces
dielectrically isolated
contacted at elevated
from top thin Si film
temperatures under
pressure
EmergingDevices27
SelfIsolationandJunctionIsolation
Lateral Logic
Level MOSFET
Lateral HV MOSFET
Selfisolationonlyfeasible
withMOSFETdevices.
P substrate
isolatedregions
+
N
Junctionisolation.
parasitic
diode
EmergingDevices28
HighVoltageLowVoltageCrossovers
Electricfieldlines
Metalat+V
SiO
2
+
N
Fieldcrowdingand
prematurebreakdown.
+
P
depletion
layer
P@V
Polysilicon
Metalat+V
fieldshield
SiO
2
+
N
depletion
layer
Useoffieldshieldsto
minimizefieldcrowding
problemsatHV/LV
crossovers.
P@V
EmergingDevices29
SmartorIntelligentSwitchUsingMOSFETs
Lateral Logic
Level MOSFET
Vertical Power MOSFET

G
+
P
N
N
+
P
+
P
Diode
Crosssectional
diagramofswitch.
P
+
D
Circuitdiagram
Addadditionalcomponentsonvertical
MOSFETwaferaslongasnomajor
processchangesrequired.
Diode
Power
Lateral Logic
MOSFET
Level MOSFET
PNjunctionformedfromNdriftregion
andPbodyregionalwaysreversebiased
ifdrainofpowerMOSFETpositive
respecttosource.Provideselectrical
isolationofthetwoMOSFETs.
EmergingDevices30
SmartPowerSwitchUsingBJTs
Lateral Logic
Vertical Power
Lateral Logic
Level NPN BJT
NPN BJT
Level PNP BJT
+
P
N
P
P
Crosssectionalview
P
-
epi
epi
epi
+
+
N
P-epi
+
N
ThreeelectricallyisolatedBJTsdiagramed
PNjunctionisolationviaPepiandtopsideP+diffusion
Doubleepitaxialprocesssquence
PepigrownonN+substrate
N+buriedlayerdiffusedinnext
NepifordriftregiongrownoverPepi
P+isolationdiffusionstoPepi
DiffusionforbaseandemittersofBJTs
EmergingDevices31
HighVoltageIntegratedCircuits(HVICs)
Lateral HV
DMOSFET
Lateral Logic
Lateral Logic
Level NPN BJT
Level PNP BJT
P
epi
+
P
+
P
+
N
epi
epi
HVICusing
junctionisolation
+
N
P-substrate
Lateral HV
Lateral Logic
N-channel
Lateral Logic
Level N-MOSFET
Level P-MOSFET
DMOSFET
G
S
D
+
N
+
P
N
+
HVICusingself
isolation
P substrate
EmergingDevices32
DiscreteModuleExampleIXYSI3MIGBTModule
Intelligentisolatedhalfbridge
200A1080V
Builtinprotectionandsensingof
overcurrents,overvoltages,
overtemperatures,shortcircuits.
ModuleswithonlyIGBTsandanti
paralleldiodesavailablewith
ratingsof3300V1200A
EmergingDevices33
IGCTIntegratedGateCommutatedThyristor
Turn-on
Q1
C1
Cn
Qn
10V - 5A
GCT Gate
Control
Q1
Qn
20V - 6 A
C1
SpeciallydesignedGTOwithlow
inductancegatedrivecircuit
Ratings
Blockingvoltage4500V
Controllableonstatecurrent4000A
Averagefwdcurrent1200A
Switchingtimes10sec
Cn
C2
50,000 F
GCT Cathode
Turn-of
Approximategatedrivecircuit
Ion500A10sec
Iofffullforwardcurrent10usec
Verylowseriesinductance3nH
EmergingDevices34
EmitterTurnoffThyristor
Q1
C1
Cn
Qn
10V - 5A
GTO or GCT
Control
Qn
Q1
Qn
Q1
PerformancesimilartoIGCTs
AdvantagesoverIGCTs
Simplerdrivecircuit
EasiertoparallelMOSFETsinserieswithGTO
havepositivetemperaturecoefficient
SeriesMOSFETscanbeusedforovercurrentsensing
EmergingDevices35
EconomicConsiderationsinPICAvailability
PICdevelopmentcosts(exclusiveofproductioncosts)
Discretemoduleshavelowerdevelopmentcosts
LargerdevelopmentcostsforsmartswitchesandHVICs
Productioncosts(exclusiveofdevelopmentcosts)ofsmartswitchesand
HVICslowerthanfordiscretemodules.
ReliabilityofsmartswitchesandHVICsbetterthandiscretemodules.
Greaterflexibility/functionalityindiscretemodules
Widerrangeofcomponentsmagnetics,optocouplers
PICswillbedevelopedforhighvolumeapplications
Automotiveelectronics
Telecommunications
Powersupplies
Officeautomationequipment
Motordrives
Flourescentlightingballasts
EmergingDevices36
SummaryofSiliconPowerDeviceCapabilities
Vof
Thyristors
5 kV
GTOs, IGCTs, ETOs
4 kV
3 kV
IGBT
s
2 kV
MCT
s
Io
n
BJTs
1 kHz
1 kV
10 kHz
MOSFET
s
100 kHz
1 MHz
500 A
1000 A
1500 A
2000 A
3000 A
Frequency
EmergingDevices37
NewSemiconductorMaterialsforPowerDevices
Siliconnotoptimummaterialforpowerdevices
Galliumarsenidepromisingmaterial
Higherelectronmobilities(factorofabout56)fasterswitchingspeeds
andloweronstatelosses
LargerbandgapEghigheroperatingtemperatures
Siliconcarbideanotherpromisingmaterials
LargerbandgapthansiliconorGaAs
MobilitiescomparabletoSi
Significantlylargerbreakdownfieldstrength
LargerthermalconductivitythanSiorGaAs
Diamondpotentiallythebestmaterialsforpowerdevices
Largestbandgap
Largestbreakdownfieldstrength
Largestthermalconductivity
LargermobilitiesthansiliconbutlessthanGaAs
EmergingDevices38
PropertiesofImportantSemiconductorMaterials
Property
Si
GaAs
3CSiC
6HSiC
Bandgap@300
Diamond
EmergingDevices39
OnStateResistanceComparisonwithDifferentMaterials
Specificdriftregionresistanceofmajoritycarrierdevice
4q(BVBD)2
RonA
emn(EBD)3
Normalizetosiliconassumeidenticalareasandbreakdown
voltages
Ron(x)A
eSimSi
Ron(Si)A=resistanceratio= exmx
EmergingDevices40
MaterialComparison:PNJunctionDiodeParameters
ApproximatedesignformulasfordopingdensityanddriftregionlengthofHVpn
junctions
BasedonstepjunctionP+NN+structure
e[EBD]2
Nd=driftregiondopinglevel2qBV
BD
2BVBD
Wd=driftregionlength E
BD
Numericalcomparison1000Vbreakdownrating
Material
Nd
Si
1.3x1014
GaAs
5.7x1014
50
SiC
1.1x1016
10
Diamond
1.5x1017
cm3
Wd
67m
2
EmergingDevices41
MaterialComparison:CarrierLifetimeRequirements
Driftregioncarrierlifetimerequiredfor1000Vpnjunctiondiode
Approximatedesignformulabasedonstepjunction

EmergingDevices42
RecentAdvances/Benchmarks
Galliumarsenide
600VGaAsSchottkydiodesannouncedbyMotorola.250VavailablefromIXYS
3GaAswafersavailable
Siliconcarbide
3wafersavailablefromCreeResearchexpensive
600V6ASchottkydiodesavailablecommerciallyInfineonTechnologiesAG(Siemensspinoff)
Controlledswitchesalsodemonstrated
1800V3ABJTwithbetaof20
3100V12AGTO
Diamond
Polycrystallinediamondfilmsofseveralmicronthicknessgrownoverlarge(square
centimeters)areas
Simpledevicestructuresdemonstratedindiamondfilms.
PNjunctions
Schottkydiodes
EmergingDevices43
Projections
GaAs
DevicessuchasSchottkydiodeswhicharepreesentlyatornear
commercialintroductionwillbecomeavailableandused.
GaAsdevicesofferonlyincrementalimprovementsinperformanceover
SidevicescomparedtoSiCordiamond.
BroadintroductionofseveraltypesofGaAsbasedpowerdevices
unlikely.
SiC
RapidadvancesinSiCdevicetechnology
SpurredbythegreatpotentialimprovementinSiCdevicescomparedto
Sidevices.
CommerciallyavailableSiCpowerdeviceswithin510years.
Diamond
Researchconcentratedinimprovingmaterialstechnology.
Growthofsinglecrystalmaterial
Ancilliarymaterialsissuesohmiccontacts,dopants,etc.
Nocommerciallyavailablediamondbasedpowerdevicesinthe
forseeablefuture(next1020years).
EmergingDevices44

Nes Mohan Power Electronics PPT Slides Ch26

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LectureNotes

JFET in blocking state

unique feature of FCT

R1 >> R2 1-10 Meg

Turning off the BJT with the larger

Wider of two base regions

Si wafer with SiO

Top Si wafer thinned

Si wafer with SiO

Vertical Power MOSFET

Level NPN BJT

Level PNP BJT

Level NPN BJT

Level PNP BJT

GTOs, IGCTs, ETOs

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