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Dipoles
A magnetic
An
electric dipole
dipoleisiscomposed
composedof
of22electric
magnetic
charges,
charges
1 positive
or poles,
and1 1north
negative.
pole and
1 south pole.
Atoms can exhibit magnetic
properties that sometimes
mimic this simple bar magnet
behavior.
N
S
E
B
The magnetic
electric field
field
of of
the
the
electric
magnetic
dipole
dipole
looks
looks
like this.
identical to the electric dipole.
Magnetic Materials
Magnetic materials are formed by collecting a large number of atoms that display this
inherent magnetism.
A bulk piece of a magnetic material
Its
Replace
constituent
the bar
magnetic
magnets
atoms
with
dipole
(viewed
vectors
as bar magnets)
In this example, all the dipoles are aligned (perhaps by an external magnetic
field). In the more general case, the dipoles may be all randomly oriented.
These magnetic dipoles (at the atomic level) are represented by i. Since these
are vector quantities, the total magnetic moment total is found by a vector sum of
the individual atomic magnetic moments.
Magnetic Materials
The total magnetization of a material is defined as the magnetic dipole density in a
total
material
B B0 0 M
B0
H
M
0
Km 0
m Km 1
M mH
In a linear material, we have
Recall the variety of magnetic behaviors that materials & films may exhibit.
1. Diamagnetic--these materials have magnetic susceptibilities that oppose the
application of an external B field. This can be viewed as the opposition of e in
their orbitals to the varying Bext as required by Lenzs Law.
Diamagnetic materials have negative susceptibilities.
All materials are inherently diamagnetic to some degree, but other behavior may
dominate. Conductors are strongly diamagnetic in the presence of alternating
fields. Superconductors, lacking electrical resistance to current flow, are perfectly
diamagnetic and expel external B fields from their interiors.
Material
m (105)
Bismuth
Mercury
Silver
Carbon (diamond)
Carbon (graphite)
Lead
Sodium chloride
Copper
Water
B, T C
where C is the Curie constant for the material & T is the absolute temperature.
Material
m (105)
720
66
40
26
6.8
5.1
2.2
1.4
1.2
0.72
0.19
T ~
(T)
T (K)
C
T
B, T
C
T TC
For T > Tc, the material is paramagnetic. For T < Tc, it is ferromagnetic.
Material
Tc (K)
Fe
Co
Ni
Gd
Dy
Cu2MnAl
Fe2B
MnB
1043
1388
627
293
85
630
1015
578
para
(T)
Curie-Weiss
complex
hysteretic
behavior
Tc
T (K)
remanent magnetization = M0
coercivity = Hc
Material
Hc (T)
M0 (T)
(BB0/0)max (kJ/m3)
BaFe12O19
0.36
0.36
25
Alnico IV
0.07
0.6
10.3
Alnico V
0.07
1.35
55
Alcomax I
0.05
1.2
27.8
MnBi
0.37
0.48
44
Ce(CuCo)5
0.45
0.7
92
SmCo5
1.0
0.83
160
Sm2Co17
0.6
1.15
215
Nd2Fe14B
1.2
1.2
260
Magnetoresistance
Magnetoresistance is the variation of a materials (or films) electrical resistance with
the applied B field. The resistance can increase or decrease, typically by a few
percent for ordinary materials.
In a semiconductor with a single carrier type, the MR is proportional to (1 + (B)2)
where is the carrier mobility (m2/V-sec).
The Giant Magnetoresistance Effect (GMR) is a quantum mechanical effect
observed in thin film structures composed of alternating ferromagnetic and
nonmagnetic metal layers. The variation can be large.
In zero field the magnetization of adjacent ferromagnetic layers are antiparallel due
to a weak anti-ferromagnetic coupling between layers. This gives rise to a zero-field
resistivity.
When a field is applied to the film, a lower resistance appears when the
magnetization of the adjacent layers align. The spin of the electrons of the
nonmagnetic metal align parallel or antiparallel with an applied magnetic field in
equal numbers. These suffer less magnetic scattering when the M of the
ferromagnetic layers are parallel.
An example of GMR in Fe/Cr layers. Note how the effect increases as the film
thicknesses are varied.
Fe (FM)
Cr
Fe (FM)
t (nm)
Colossal Magnetoresistance
Colossal magnetoresistance (CMR) is a property of some materials, mostly
manganese-based perovskite oxides, that enables them to dramatically change their
electrical resistance in the presence of a magnetic field. The resistivity can change
by orders of magnitude. There is no theory to explain this so far.
L
L
saturation
material
crystal axis
magnetostriction
(x 10-5)
Fe
Fe
Fe
Ni
Ni
Ni
Co
100
111
polycrystal
100
111
polycrystal
polycrystal
+(1.1-2.0)
-(1.3-2.0)
-0.8
-(5.0-5.2)
-2.7
-(2.5-4.7)
-(5.0-6.0)
sample
detection coils
magnet
sample
oscillation
external DC B0
detector
coils
stepped B overshoot
1 Oe
0.1
0.01
0.01
The sample vibrates along the Z axis perpendicular to the magnetizing field.
This induces a signal in the pick-up coil system that is fed to a differential amplifier.
The output of the differential amplifier is subsequently fed into a tuned amplifier and
an internal lock-in amplifier that receives a reference signal supplied by the oscillator.
The output of this lock-in amplifier is a DC signal proportional to the magnetic
moment of the sample being studied.
VSM Sensitivity
The voltage V across the VSM detection coils can be written as
V = MAFS
where
A. Background signals
These can include vibration of the detector coils due to mechanical coupling from
the sample vibrator (need to insure vibration isolation here). Also stray signals can
come from wire loops or drive wires leading to the vibrator (independent of B and
present without a sample). Also pickup from other power sources (electrical &
mechanical vibrations).
B. Noise in VSM
The main sources of noise include the usual culprits (Johnson, Shot, and 1/f noise).
Johnson noise (thermal noise due to e fluctuations in R) is usually the most
significant in VSM. It is given by
VRMS = (4kTRf)1 / 2
where
k = Boltzmanns constant
T = absolute T
R = coil resistance