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12-10-2009 BVD-L7
What is SPICE?
BVD-L7
What is modeling?
• Future prediction.
In this case you are trying to design an IC to meet a
certain specification.
SPICE modeling
• Developed at Berkeley.
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SPICE Levels
• Level 1
– Square-law current voltage.
• Level 2
– Detailed analytical model.
• Level 3
– Semi empirical model.
• BSIM4
– sub-micron
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SPICE Levels
Level 1
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SPICE Levels
Level 1
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SPICE Levels
Level 1
kT ni
2φF = 2 ln
q N
A
k , VTo , γ , 2φF , λ
BVD-L7
Level-2 Model
This model has the following features :
BVD-L7
Level-2 Model
• To calculate current, bulk depletion charges are taken into account. Current
equation is solved using voltage dependent Bulk charge term:
( V
VGS −VFB − 2 φF − DS
2 ) VDS
−2γ 3/ 2
k W
3 [( ]
ID =
(1−λVDS ) L 3/ 2
VDS −VBS + 2 φF ) −( −VBS + 2 φF )
• The equation shows current variation with λ,Y, VBS. The saturation voltage
is calculated as
( 2
VDsat =VGS −VFB − 2 φF +γ 2 1− 1+ (
1
γ2
VGS −VFB ) )
I D = I Dsat
( 1−λVDS )
BVD-L7
Level-2 Model
• Mobility variations: surface mobility deceases with increasing VG. Mobility
variation is taken into account as
U
e
ε tocU c
k ( new ) = k si
(
εox Vgs −VT −U tVds )
• Uc is gate to channel critical field, Ut is gate to channel critical field variation
due to drain voltage. Ue is exponential fitting parameter. The channel length
modulation parameter is defined as
∆L =
2 εSi
qN A
[ VDS −VDsat
4
+ 1+ (
VDS −VDsat
4 )
2
]
∆L
λ = L V
eff DS
BVD-L7
Level-2 Model
• Velocity saturation parameter : the inversion layer charge for Vds =Vdsat is
I Dsat
Q = W .v
inv max
∆L = X D ( X D . vmax
2µ ) 2
+VDS −VDsat
2 εsi
X =
D qN A N eff
BVD-L7
Level-3 Model
• semi-empirical model.
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Level-3 Model
• Level 3 is for short channel MOSFET . The majority of equations at this
level are empirical. The aim is to improve the accuracy by reducing
complexity and calculation time. Current equation can be written as
W 1 +F
I = µ .C . V −V − BV .V
D s ox L gs T 2 ds ds
eff
γ.F
F = s +F
B n
4. 2φ +V
F SB
• FB shows bulk charge dependence, Fs and μS are influenced by short-
channel effects, Fn includes narrow width effects.
BVD-L7
Level-3 Model
• The surface mobility dependence on gate voltage is defined as
µ =
µ
s
1 +.
V
gs
ϕ V
−
t
µ
µ
eff
=
V
s
1+ .
s v
µ
ds
.L
m
ax eff
BVD-L7
Comparison of Models
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BVD-L7