Application of photodiodes

A brief overview

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Diode devices
Check valve behavior
Diffusion at the PN junction
of P into N and N into P
causes a depleted nonconductive region
Depletion is enhanced by
reverse bias
Depletion is broken down by
forward bias

When forward biased

High current flow junction
voltage

When reverse biased

Very low current flow unless
above peak inverse voltage
(PIV) (damaging to
rectifying diodes, OK for
zeners)
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Quantum devices
Absorption of a photon of sufficient energy elevates
an electron into the conduction band and leaves a
hole in the valence band.
Conductivity of semi-conductor is increased.
Current flow in the semi-conductor is induced.

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Photodiode structure

Absorbtion in the
depletion layer
causses current to
flow across the
photodiode and if
the diode is
reverse biased
considerable
current flow will be
induced

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Photodiode fundamentals
Based on PN or PIN junction diode
photon absorption in the depletion
region induces current flow
Depletion layer must be exposed
optically to source light and thick
enough to interact with the light

Spectral sensitivity
Material

Band gap
(eV)

Spectral sensitivity

silicon (Si)

1.12

250 to 1100 nm

indium arsenide (InGaAs)

~0.35

1000 to 2200 nm

Germanium (Ge)

.67

900 to 1600 nm

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Photodiode characteristics
Circuit model
I0 Dark current (thermal)
Ip Photon flux related current

Noise characterization
Shot noise (signal current related)
q = 1.602 x 1019 coulombs
I = bias (or signal) current (A)
is = noise current (A rms)

is 2qi

Johnson noise (Temperature related)

k = Boltzmans constant = 1.38 x 1023 J/K

T = temperature (K)
B = noise bandwidth (Hz)
eout
R = feedback resistor (W)
eOUT = noise voltage (Vrms)

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4kTBR

Photodiode current/voltage characteristics

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Trans-impedance amplifier function

Current to voltage converter (amplifier)
Does not bias the photodiode with a voltage as
current flows from the photodiode (V1 = 0)
Circuit analysis
Io 0
I f Is
V1 0
V f R f I f R f Is
Vout V f R f I s
Note: current to voltage conversion

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Diode operating modes

Photovoltaic mode

Photodiode has no bias voltage

Lower noise
Lower bandwidth
Logarithmic output with light intensity

Photoconductive mode
Higher bandwidth
Higher noise
Linear output with light intensity

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For the photovoltaic mode

I = thermal component + photon flux related current
eV
eP
kT

I I 0 e 1
h

where
I = photodiode current
V = photodiode voltage
I0 = reverse saturation current of diode
e = electron charge
k = Boltzman's constant
T = temperature (K)
= frequency of light
h = Planks constant
P = optical power
= probability that hv will elevate an electron across the band gap

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Circuit Optimization
Burr-Brown recommendations (TI)
Photodiode capacitance should be as low as possible.
Photodiode active area should be as small as possible so that
CJ is small and RJ is high.
Photodiode shunt resistance (RJ ) should be as high as
possible.
For highest sensitivity use the photodiode in a photovoltaic
mode.
Use as large a feedback resistor as possible (consistent with
bandwidth requirements) to minimize noise.
Shield the photodetector circuit in a metal housing.
A small capacitor across Rf is frequently required to suppress
oscillation or gain peaking.
A low bias current op amp is needed to achieve highest
sensitivity
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