J-FET (Junction Field Effect Transistor)

Introduction

The field-effect transistor (FET) controls the

current between two points but it is different
from bipolar transistor.
The FET operates by the effects of an electric
field on the flow of electrons through a single
type of semiconductor material.
This is why the FET is sometimes called a
unipolar transistor.

J-FET (Junction Field Effect Transistor)

Introductioncont
Current moves within the FET in a channel, from the
source (S) connection to the drain (D) connection. A
gate (G) terminal generates an electric field that controls
the current .
The channel is made of either N-type or P-type
semiconductor material; an FET is specified as either an
N-channel or P-channel device
Majority carriers flow from source to drain.
In N-channel devices, electrons flow so the drain
potential must be higher than that of the Source (VDS >
O)- In P-channel devices, the flow of holes requires that
VDS < 0

FET ( Field Effect Transistor)

Few important advantages of FET over conventional Transistors
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.

Unipolar device i. e. operation depends on only one type of charge

carriers (h or e)
Voltage controlled Device (gate voltage controls drain current)
Very high input impedance (109-1012 )
Source and drain are interchangeable in most Low-frequency
applications
Low Voltage Low Current Operation is possible (Low-power
consumption)
Less Noisy as Compared to BJT
No minority carrier storage (Turn off is faster)
Self limiting device
Very small in size, occupies very small space in ICs
Low voltage low current operation is possible in MOSFETS
Zero temperature drift of out put is possible

Types of Field Effect Transistors

(The Classification)

JFET

FET

n-Channel JFET
p-Channel JFET

MOSFET (IGFET)

Enhancement
MOSFET
n-Channel
EMOSFET

p-Channel
EMOSFET

Depletion
MOSFET
n-Channel
DMOSFET

p-Channel
DMOSFET

The Junction Field Effect Transistor (JFET)

Figure: n-Channel JFET.

Biasing the JFET

Figure: n-Channel JFET and Biasing Circuit.

Operation of JFET at Various Gate Bias Potentials

Figure: The nonconductive depletion region becomes broader with increased reverse bias.
(Note: The two gate regions of each FET are connected to each other.)

Simple Operation and Break down of n-Channel JFET

Figure: n-Channel FET for vGS = 0.

N-Channel JFET Characteristics and Breakdown

Break Down Region

Figure: If vDG exceeds the breakdown voltage VB, drain current increases rapidly.

VD-ID Characteristics of EMOS FET

Locus of pts
where

V DS VGS V P

Saturation or Pinch
off Reg.

Figure: Typical drain characteristics of an n-channel JFET.

Transfer (Mutual) Characteristics of n-Channel JFET

GS
I
I
1

DS
DSS
V
P

IDSS

VGS (off)=VP

Figure: Transfer (or Mutual) Characteristics of n-Channel JFET

Output or Drain (VD-ID) Characteristics of n-JFET

Figure: Circuit for drain characteristics of the n-channel JFET and its Drain characteristics.

Non-saturation (Ohmic) Region:

The drain current is givenI by
DS

Saturation (or Pinchoff)

Region:
I

DS

DSS
V2
P

V
V
GS
P

V
V
DS
GS
P

2I

DSS
V2
P

V
V V

GS
P
DS

DS

V2

V
V
DS
P
GS

and I

DS

1 GS
DSS
V
P

Where, IDSS is the short circuit drain current, VP is the pinch

off voltage

MOSFETs

MOSFETs have characteristics similar to JFETs and additional

characteristics that make then very useful
There are 2 types of MOSFETs:
Depletion mode MOSFET (D-MOSFET)
Operates in Depletion mode the same way as a JFET when VGS 0
Operates in Enhancement mode like E-MOSFET when VGS > 0
Enhancement Mode MOSFET (E-MOSFET)
Operates in Enhancement mode
IDSS = 0 until VGS > VT (threshold voltage)

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 Importance for LSI/VLSI

Low fabrication cost
Small size
Low power consumption

Applications
Microprocessors
Memories
Power Devices

Basic Properties

Unipolar device
Very high input impedance
Capable of power gain
Two possible device types: enhancement
mode; depletion mode
Two possible channel types: n-channel; pchannel

Symbols
D

S
p Channel MOSFET

n Channel MOSFET

The saturation region is when the MOSFET experiences

pinch-off.
Pinch-off occurs when VG - VD is less than VT.

body
B

source
S

gate
G
- +

drain
D
VDS large

+++
+++
+++
metal
oxide

n+

n+
p

Depletion mode n-MOSFET

Figure 5.46 n-Channel depletion MOSFET.

Depletion Mode MOSFET Construction

The Drain (D) and Source (S) leads connect to the to n-doped regions
These N-doped regions are connected via an n-channel
This n-channel is connected to the Gate (G) via a thin insulating layer of
SiO2
The n-doped material lies on a p-doped substrate that may have an
additional terminal connection called SS
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