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5-1
5-2
5-3
DIFFUSION DEMO
Glass tube filled with water.
At time t = 0, add some drops of ink to one end
of the tube.
Measure the diffusion distance, x, over some time.
to
x (mm)
t1
t2
t3
xo
x1
x2 x3
time (s)
100%
0
Cu
Ni
100%
Concentration Profiles
0
Concentration Profiles
C
A
D
B
C
D
A
B
Substitutional Diffusion
Example: If atom A
has sufficient activation
energy, it moves into the
vacancy self diffusion.
Activation
Energy of
Self diffusion
Activation
Energy to
form a
Vacancy
Activation
+ Energy to
move a
vacancy
5-4
Interstitial atoms
Matrix
atoms
5-5
C1
Concentration
Of diffusing C
2
atoms
Distance x
Diffusing
atoms
5-6
Ficks Law
J D
5-7
dc
dx
dc
dx
i.e. for steady state diffusion condition, the net flow of atoms by atomic
diffusion is equal to diffusion D times the diffusion gradient dc/dx .
Diffusivity
5-8
Plane 1
Plane 2
d dc x
D
dt
dx
dx
dC x
dx
J (left)
To conserve matter:
JJ (right)
dC
(right)JJ (left)
(left) dC
dx
dx
dt
dt
dJ
dC
dJ dC
dt
dx
dt
dx
Governing Eqn.:
J (right)
Concentration,
C, in the box
JJ D
or
D
or
dx
dx
2 (if
(ifDDdoes
does
dJ
dJ dd2CC not
D
notvary
vary
D
with x)
dx
dx
dx
dx22 with x)
equate
equate
dC
d2C Ficks second law
=D 2
dt Mechanical
dx & Aerospace Engineering
Cs
C(x,t)
t1
t
Co o
bar
pre-existing conc., C o of copper atoms
t3
t2
position, x
Boundary conditions:
For t = 0, C = C0 at x > 0
For t > 0, C = Cs at x = 0
C = C0 at x =
dC
d2C
=D 2
dt
dx
Cs
C(x,t)
t1
t
Co o
bar
pre-existing conc., C o of copper atoms
t3
t2
position, x
General solution:
x
C(x, t) C o
1 erf
2 Dt
Cs Co
"error function"
.
Mechanical & Aerospace Engineering
Error Function
2
erf ( x)
x2
dx
C ( x, t ) C0
x
1 erf
C s C0
2 Dt
becomes
C1 C0
x
constant 1 erf
Cs C0
2 Dt
x2
constant
Dt
Mechanical & Aerospace Engineering
PROCESSING QUESTION
C(x,t) Co
x
(Dt)500C =(Dt)600C
=1 erf
Cs Co
2Dt
5.3x10-13m2/s
10hrs
(Dt)600
110hr
Answer:
t 500
D500
14
2
4.8x10 m /s
Note: values
of D are
provided here.
5-11
Carburizing
C%
Low carbon
Steel part
5-12
Diffusing carbon
atoms
Carbon Gradients
In Carburized metals
Mechanical & Aerospace Engineering
(After Metals handbook, vol.2: Heat Treating, 8 th ed, American Society of Metals, 1964, p.100)
Carburizing
Carburizing Furnace
Carburized Gear
Mechanical & Aerospace Engineering
Impurities are made to diffuse into silicon wafer to change its electrical
characteristics.
Used in integrated circuits.
Silicon wafer is exposed to vapor of impurity at 11000C in a quartz tube
furnace.
The concentration of
impurity at any point
depends on depth and
time of exposure.
5-13
D = Diffusivity m2/s
D0 = Proportionality constant m2/s
Q = Activation energy of diffusing
species J/mol
R = Molar gas constant = 8.314 J/mol.K
T = Temperature (K)
D D0 e RT
or
or
5-14
ln D ln D0
Q
RT
log10 D log10 D0
Q
2.303RT
D500
7 1013
1 10
17
exp( Q / RT1 )
exp
R
exp
R T2
1273 773
T1
Q 183KJ / mol
5-15
Solvent
D0
(M2/S)
5-16
Q
KJ/mol
Carbon
FCC Iron
2 x 10-5
142
Carbon
BCC Iron
22 x 10-5
122
Copper
Aluminum
1.5 x 10-5
126
Copper
Copper
2 x 10-5
197
Carbon
HCP Titanium
51 x 10-5
182
SUMMARY:
STRUCTURE & DIFFUSION
Diffusion FASTER for...
close-packed structures
materials w/secondary
bonding
materials w/covalent
bonding