PN-Junction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than
the Cathode --- Current flows in the direction of the arrow in the
symbol.
Reverse Bias --- External battery makes the Cathode more positive
than the Anode --- A tiny current flows opposite to the arrow in the
symbol.
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Graphical
PN-Junction Diode V-I Characteristic
Forward Bias Region
Reverse Bias Region

Reverse
breakdown

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Mathematical Approximation

ID = Is (e

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VD
VT

-1)

Ideal PN Junction Diode V-I Characteristic

Forward Bias Short Circuit

Reverse Bias Open Circuit

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Diode Reverse Recovery Time

ta is the time to remove the charge stored in the

depletion region of the junction
tb is the time to remove the charge stored in the bulk
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Reverse Recovery Characteristics

Soft Recovery

Reverse recovery time = trr = ta+tb

Peak Reverse Current = IRR = ta(di/dt)
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Reverse Recovery Characteristics

Abrupt Recovery

Reverse recovery time = trr = ta+tb

Peak Reverse Current
= IRR = ta(di/dt)
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Series-Connected Diodes
Use 2 diodes in series
to withstand higher
reverse breakdown
voltage.
Both diodes conduct
the same reverse
saturation current, Is.

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Diode Characteristics
Due to differences
between devices,
each diode has a
different voltage
across it.
Would like to
Equalize the
voltages.

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Series-Connected Diodes with

Voltage Sharing Resistors

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Series-Connected Diodes with

Voltage Sharing Resistors

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Series-Connected Diodes with

Voltage Sharing Resistors
Is = Is1+IR1 = Is2+IR2
IR1 = VD1/R1
IR2 = VD2/R2 = VD1/R2
Is1+VD1/R1 = IS2+VD1/R2
Let R = R1 = R2
Is1 + VD1/R = Is2 +VD2/R
VD1 + VD2 = Vs
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Example 2.3
Is1 = 30mA, Is2 = 35mA
VD = 5kV
(a) R1=R2=R=100k,
find VD1 and VD2
(b) Find R1 and R2
for VD1=VD2=VD/2
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Example 2.3 (a)

Is1 = 30mA
Is2 = 35mA
R1 = R2 = R = 100k
-VD = -VD1 - VD2
VD2 = VD - VD1
VD1
VD2
Is1 +
= Is2 +
R
R
VD R
VD1 =
+ (IS2 -IS1 )
2 2
5kV 100k
VD1 =
+
(3510-3 - 3010-3 ) = 2750Volts
2
2
VD2 = VD - VD1 = 5kV - 2750
= 2250Volts
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Example 2.3 (a) simulation

R1
100kOhm

+
-

U1
-2.727k V DC 1MOhm

D1
DIODE_VIRTUAL*

V1
5000 V

R2
100kOhm

+
-

U2
-2.273k V DC 1MOhm

D2
DIODE_VIRTUAL**

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Example 2.3 (b)

Is1 = 30mA
Is2 = 35mA
VD
= 2.5kV
2
VD1
VD2
Is1 +
= Is2 +
R1
R2
VD1 = VD2 =

R2 =

VD2R1
VD1 - R1(Is2 -Is1 )

R1 = 100k
2.5kV100k
R2 =
2.5kV -100k(3510 -3 - 3010 -3 )
R2 = 125k
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Example 2.3 (b) simulation

R1
100kOhm

+
-

U1
-2.500k V DC 1MOhm

D1
DIODE_VIRTUAL*

V1
5000 V

R2
125kOhm

+
-

U2
-2.500k V DC 1MOhm

D2
DIODE_VIRTUAL**

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