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Development of 16-18

GHz SSPA
GAETEC, Hyderabad

Specifications
S/N

Parameter

Specification

1.

Frequency

17 GHz 150 MHz

2.
3.

The SSPA should have a built-in drop-in isolator at the


output port for open circuit protection of the SSPA.
Input Power variation

Power Rating: 33 dBm (min.)


Isolation: 20 dB (min.)
1.5 dBm to + 1.5 dBm

4.

Power Output

31 dBm (min) at output port after isolator

5.

Output Power flatness over frequency range of 17 GHz 0.2 dB (max.)


150 MHz at any specific temperature over 40C to
+65C (With temperature compensation circuit)
Output Power flatness over temperature range of
0.2 dB (max.)
40C to +65Cat any specific frequency over 17 GHz
150 MHz (With temperature compensation circuit)
Noise Figure
6 dB (Typical)

6.
7.
8.
9.

Near-carrier Phase-noise
90 dBc/Hz or better
@ 100 Hz offset (Maximum 2 dB spectral degradation) for input signal spectral purity of 92 dBc/Hz
Spurious
70 dBm/MHz (max.)

10.

Harmonics

20 dBc (max.)

11.

Input & output Connectors

SMA female

12.

Input VSWR

1.5:1 or better

13.

Output VSWR

1.5:1 or better

14.

Input Voltages

15.

Voltage Ripple (*1)

+ 8V @ 1.5 A
5V @ 20 mA
0.1V

16.

Voltage Regulation (*1)

Vdd: 8V0.5V,-5V0.25V

Remarks

Implementation block
diagram

Thermopa
d
(optional)

Driver
Amplifier
MMIC
Gain: 15 dB
P1dB: 18dBm

Thermopa
d
(optional)

High Power
Amplifier MMIC
Gain: 18 dB
P1dB: 33dBm

Drop-in Isolator
Insertion Loss: 1
dB

Survey of Commercially available


MMICs
Freq
Range
Driver Amplifiers
HBH
14-18
Microwaves,
GmBH,
HA6064M
Triquint/Quorvo 16-18
TGA2620
Transcom
Inc., 14-18
Taiwan, TC1950
Transcom
Inc., 14-18
Taiwan, TC1952
This
16-18
development
Power Amplifiers
Triquint/Quorvo 16-18
TGA2621
HBH
14-18
Microwaves,
GmBH,
HA6065M
Transcom
Inc., 14-18

Gain

Pout

PAE

Vds/Ids

Chip
Size

Remarks

GHz 22dB 20.5dB


m

8V/105mA 2.1x1.5
mm

GHz 20dB 18dBm


19dB 15 dBm

6V/30mA
Vg:-0.6V
5V/80mA

12dB 26 dBm

8V/350mA

Low Gain

8V/100mA TBD
Vgg=-0.4V

Focus on gain
flatness

GHz 15dB 18 dBm

GHz 26dB 30.5


dBm
GHz 24 dB 35dBm

28% 6V/400mA
Vg:-0.6V
35% 8V/1.3A
Vgg=-0.8V

GHz 10 dB 33 dBm 17% 8V/1.4A

New foundry

1.14x1.24
mm
Low P1dB

2.0x2.5
mm
3.13x2.1
mm

Low P1dB
New foundry

Low gain

MMIC development: Technology


Choice
Transistor Technology

pHEMT

Gate Length

0.25 m

Cut-off Frequency (fT)

35 GHz

Power Density

0.85 W/mm @10GHz

VBGD

17V(min.), 20V (Typ.)

Pinch-off Voltage

-0.9V

VDS (max)

8V (Typ)

Imax

500 mA/mm

Passive components

Precision low TCR resistors


High sheet resistivity resistors
Spiral inductors, MIM capacitors
Via-holes and Air Bridges, Lange Coupler
Under implementation at GAETEC in collaboration
with OMMIC France. Likely to be available from
March 2017. Pilot design/fab runs can be done at
OMMIC

Availability Status

Target Specifications for Driver and


Power Amplifier MMICs
Driver Amplifier
S/N
1.

Parameter
Frequency

Specification
17 GHz 150 MHz

2.

Gain

15dB

3.

P1dB

18dBm

4.

Input Return loss

Better than 14dB

5.

Output return loss

Better than 14dB

6.

Noise figure

Better than 4dB

7.

Power supply

Vdd: +8V/100mA, Vgg:-0.4V

8.
S/N
1.

Chip Size (tentative)


Parameter
Frequency

2.

Gain

18dB (min)

3.

P1dB

33dBm

4.

Input Return loss

Better than 14dB

5.

Output return loss

Better than 10dB

6.

Noise figure

Better than 5dB

7.

Power supply

Vdd: +8V/1200mA, Vgg:-0.4V

Power Amplifier
3x2mm

Specification
17 GHz 150 MHz

Remarks

Remarks

Design Approach & simulated results:


Driver Amplifier

T2
4x30m
T1
4x30m

wo stage feedback topology


evice size chosen to suit drive level for
he power amplifier
as Class: A (8V/150mA)

Design Approach & simulated results:


HPA
T4
0.8mm
T2
0.8mm
T5
0.8mm

T1
0.6mm

T6
0.8mm

T3
0.8mm

T7
0.8mm

Simulated Gain& return losses at +25oC

mulated S-Parameters over temperature range (-40 oC to +80oC)

Simulated P1dB at+25oC