P-N Junctions

So far we learned the basics of semiconductor physics, culminating

in the Minority Carrier Diffusion Equation

We now encounter our simplest electronic device, a diode

Understanding the principle requires the ability to draw band-diagrams
Making this quantitative requires ability to solve MCDE
(only exponentials!)
Here we only do the equilibrium analysis

P-N junction diode

I

P-N junction diode

I

V
qV/kT

I = I0(e

-1)

p
0

I = q(ni2/ND) (Lp/p)
pn

P-N Junctions - Equilibrium

<= N-type, high EF

<= P-type, low EF

- = fixed ionized acceptors+ = fixed ionized donors
+ = mobile holes, p

- = mobile electrons, n

What happens when these bandstructures collide?

Fermi energy must be constant at equilibrium, so bands
must bend near interface
Far from the interface, bandstructures must revert

Time < 0

Time < 0: Pieces separated

P-type piece

N-type piece

At time = 0, slam the two pieces together

Hole gradient

Gradients drive diffusion

Jp, diffusion = -qDp dp/dx = current right, holes right

Electron gradient

Jn,diffusion = -qDn dn/dx = current right, electronsleft

right

Gradients drive diffusion

++
++
++
++
++ +

- - - - - -

But charges cant venture too

far from the interface because
their Coulomb forces pull them back!

Separation of a sea of charge, leaving

behind a charge depleted region

http://scott.club365.net/uploaded_images/Moses-Parts-the-Red-Sea-2-782619.jpg

Resulting in a barrier across a depletion region

V (stopping e- flow)

V (stopping e+ flow)

Depletion
Region

How much is the Built-in Voltage?

qVbi (Ei E F )Left (EF Ei )Right
N side

P side

p Na
N a ni e

n Nd
( Ei EF )

(Ei EF )Left

kT

Na
kT ln

ni

N d ni e

( EF Ei )

(EF Ei )Right

kT

Nd
kT ln

ni

How much is the Built-in Voltage?

kT Na kT Nd
Vbi
ln
ln

q ni
q ni
kT Na Nd

Vbi
ln
2
q ni
Na acceptor level on the p side
Nd donor level on the n side

Special case: One-sided Junctions

One side very heavily doped so that Fermi level is at band edge.
e.g. p+-n junction (heavy B implant into lightly doped substrate)

(Ei EF )Left Ei EV EG / 2
N
(EF Ei )Right kT ln D
ni
EG kT Nd
Vbi

ln

2q q ni

How wide is the depletion region?

p ni e

( Ei E F )

kT

n ni e

( EF E i )

kT

Depletion Approximation-step junction

Depletion approximation-step junction

Exponentials replaced with step-functions

Doping

NAxp = NDxn
= WD/(NA-1 + ND-1)

Ks0Em = -qNAxp = -qNDxn

= -qWD/(NA-1 + ND-1)

Vbi = |Em|WD

Charge
Density

Electric
Field

Electrostatic
Potential

Depletion Width
ND

ND
N A ND
W xn x p xn xn
xn 1
xn

NA
NA
NA

2K S 0
NA

W
Vbi
q ND N A ND
2K S 0 N A ND
W
Vbi
ND N A
q

1
2

1
2

N A ND

NA

Maximum Field

Em = 2qVbi/ks0(NA-1+ND-1)

How far does Wd extend into each junction?

N A ND

NA

N A ND
N A N A ND

p
NA
NA

ND

W xn

W xn

or

or

NA
xn W

N A ND

ND
xp W

N A ND

Depletion width on the n-side depends on the doping on the p-side

Depletion width on the p-side depends on the doping on the n-side
e.g. if NA>>ND then xn>>xp One-sided junction

"P+ - N"

=>

"P - N+"

=>

>> Nd

<< Nd

P-N Junction with applied voltage

Reverse Bias
+Voltage to the n side and Voltage to the p side:

holes (+) out of P-side

Vapplied is sucking more:
electrons (-) out of N-side

Depletion region will be larger

Reverse Bias Band Diagram

Reverse Bias depletion

2K S 0 N A ND

W
Vbi Vrev
ND N A
q

1
2

xn

W Vrev

NA

N A ND

xp

W Vrev

ND

N A ND

Applied voltage disturbs equilibrium EF no longer constant

Reverse bias adds to the effect of built-in voltage

Forward Bias

Negative voltage to n side positive to p side

More electrons supplied to n, more holes to p
Depletion region gets smaller

Forward Bias Depletion

2K S 0 N A ND

W
Vbi Vfwd
ND N A
q

1
2

xn

W Vfwd

NA

N A ND

xp

W Vfwd

ND

N A ND

General Expression
Convention = Vappl= + for forward bias
Vappl= - for reverse bias

2K S 0 N A ND
Vbi Vappl
ND N A
q

1
2

NA

N A ND

xn W Vappl

ND

N A ND

x p W Vappl

Positive voltage pulls bands down- bands are plots of electron energy
Bands = plots of electron energy
Voltage = potential energy per (+) charge

Fp

Fn

n = nie(Fn-Ei)/kT
p = nie(Ei-Fp)/kT

Fermi level is not constant Current Flow

In summary
A p-n junction at equilibrium sees a depletion width
and a built-in potential barrier. Their values depend on
the individual doping concentrations
Forward biasing the junction shrinks the depletion width
and the barrier, allowing thermionic emission and higher
current. The current is driven by the splitting of the
quasi-Fermi levels
Reverse biasing the junction extends the depletion width
and the barrier, cutting off current and creating a strong
I-V asymmetry
In the next lecture, well make this analysis quantitative
by solving the MCDE with suitable boundary conditions