Bipolar Junction

Transistor Circuit Analysis

EE314

BJT Transistor Circuit Analysis

1.Large signal DC analysis

2.Small signal equivalent
3.Amplifiers

Chapter 13: Bipolar

Junction Transistors

Circuit with BJTs

Our approach: Operating point - dc operating point
Analysis of the signals - the signals to be amplified
Circuit is divided into: model for large-signal dc analysis of BJT circuit
bias circuits for BJT amplifier
small-signal models used to analyze circuits for
signals being amplified

Remember !

Large-Signal dc Analysis: Active-Region Model

Important: a current-controlled current source models the
dependence of the collector current on the base current

VCB
reverse bias

VBE
forward bias

The constrains for IB and VCE must be satisfy to keep BJT in the
active-mode

Large-Signal dc Analysis: Saturation-Region Model

VCB
forward bias

VBE
forward bias

Large-Signal dc Analysis: Cutoff-Region Model

VCB
reverse bias

VBE
reverse bias

If small forward-bias voltage of up to about 0.5 V are applied, the

currents are often negligible and we use the cutoff-region model.

Large-Signal dc Analysis: characteristics of an npn BJT

Large-Signal dc Analysis
Procedure: (1) select the operation mode of the BJT
(2) use selected model for the device to solve the circuit
and determine IC, IB, VBE, and VCE
(3) check to see if the solution satisfies the constrains for
the region, if so the analysis is done
(4) if not, assume operation in a different region and
repeat until a valid solution is found
This procedure is very important in the analysis and design
of the bias circuit for BJT amplifier.
The objective of the bias circuit is to place the operating point in
the active region.
Bias point it is important to select IC, IB, VBE, and VCE
independent of the and operation temperature.
Example 13.4, 13.5, 13.6

Large-Signal dc Analysis: Bias Circuit

From Example 13.6

VBB acts as a short

circuit for ac signals

Remember: that the Q point should be independent of the

stabi
lity issue)
VBB & VCC provide this stability, however this impractical solution

Large-Signal dc Analysis: Four-Resistor Bias Circuit

VB RB I B VBE RE I E

Solution of the bias problem:

I E 1 I B

VBE 0.7V

VB VBE
IB
RB 1 RE

Thevenin
equivalent

Equivalent
circuit for
active-region
model

Input
Output

RB R1 R2 VB VCC R2 / R1 R2

VCE VCC RC I C RE I E

Small-Signal Equivalent Circuit

iB I BQ ib (t )
Small signal equivalent circuit
for BJT:

Thevenin
equivalent

vBEQ vbe (t )

1 I ES exp
VT

vbe (t )

I BQ exp
VT

exp( x) 1 x,

vbe (t )

I BQ ib (t ) I BQ 1
VT

so

ib (t ) I BQ

vbe (t ) vbe (t )

VT
r

and

VT
r
I BQ

Common Emitter Amplifier

First perform DC analysis to find
small-signal equivalent
parameters at the operating point.
Find voltage gain:

Find input impedance:

Common Emitter Amplifier

Find current gain

Find power gain:

Find output impedance:

Problem 13.13:
Suppose that a certain npn transistor has VBE = 0.7V for IE =10mA.
Compute VBE for IE = 1mA.
Repeat for IE = 1A. Assume that VT = 26mV.

VBE
V
- 1 I ESexp BE
I E = I ES exp

VT
VT

0.7
VBE
10mA = I ESexp
and 1mA = I ESexp

0.026
0.026
0.7 - VBE
divide both sides 10 = exp

0.026
0.026 * ln 10 0.7 VBE

VBE 0.7 0.026 * ln 10 0.64V

Problem 13.14:
Consider the circuit shown in Figure P13.14. Transistors Q 1 and Q2 are
identical, both having IES = 10-14A and = 100. Calculate VBE and IC2.
Assume that VT = 26mV for both transistors.
Hint: Both transistors are operating in the active region.
Because the transistors are identical and have identical values of V BE,
their collector currents are equal.
I B1 I B 2 I C 1mA & I C I B
2
1mA
I C
1 1mA I C
0.98mA
1.02

1
I E 1 I C 0.99mA

VBE
we have
sin ce I E I ES exp
VT
I
VBE VT ln E 0.026 * ln 0.99 *1011 0.658V
I ES

Problem 13.50:
The transistors shown in Figure P13.50 operate in active region and
have = 100, VBE=0.7V. Determine IC and VCE for each transistor.

14.3
10 A
I C1 I1 1mA
1.43M
15 I E 2 *1k 0.7 I I E 2
C1
10k
1
14.3 I E 2
IE2

1mA
10k 10
101
1
1
0.43mA I E 2 *

101 10
I E 2 3.9126mA I C 2 0.99 I E 2 3.8735mA
I1

I1

IE2
VBE

VCE 2 15 1k * I C 2 I E 2 15 1.99k * I E 2 7.213V

I
VCE1 15 10k * 1mA C 2 4.6126V

Problem 13.52:
Analyze the circuit of Figure P13.52 to determine IC and VCE.

I1

IC
I1

I C I B

I I1 I E

0.7 15V

0.1047mA

I E 1 I B

150 K
I1 I B * 47k 0.7 I * 4.7k 15V

I1 * 47k I B * 47 k 0.7 I1 * 4.7k 1 * I B * 4.7k 15V

IB
IE

I1 * 47 k 4.7 k 15 0.7 I B * 47k 201* 4.7k

14.3 0.1047mA * 51.7k 14.3 5.413

9.0 A
47k 944.7 k
991.7k
I C I B 1.8mA
IB

VCE VBE 47 k * I1 I B 0.7 47 k * 0.1137 mA 6.04V

Problem 13.45:
Analyze the circuits shown in Figure P13.45 to determine I and V. For
all transistors, assume that = 100 and |VBE| = 0.7V in both the active
and saturation regions. Repeat for = 300.
(a) for 100
VBE 0.7 VB 9.3V
9 .3
23.8A
390k
I C I B 2.38mA V I C * 2.2k 5.236 V
IB

for 300
I C 7.15mA V I C * 2.2k 15.73V
Since Vmax 9.8V
max

I C max

Incorrect

9 .8
4.43mA
2 .2 k

I max 4.42mA

187.2
IB
23.8A

Problem 13.45: Contd.

(d) For 100
14.3
I B1
0.9533A
15M
I I C 2 I B 2 * 9.533mA

I C1 I B1 95.33A I B 2

V I *1k 9.533 V

For 300, I B2 286 A

I C 2 I B 2 * 85.8mA

( would give V 85.8V , Incorrect)

I C 2 2 I B1

max

and since Vmax 14.8V

I C 2 max
14.8mA

124.5
I B1
0.953A

I max 14.8mA I C 2 max

Problem 13.67:
Consider the emitter-follower amplifier of Figure P13.67 . Draw the dc
circuit and find ICQ. Next, determine the value of r. Then, calculate
midband values for Av, Avoc, Zin, Ai, G and Z0.
I1

DC Analysis

I1 *10k I1 I BE *10k 15 V

15 I1 *10k 0.7 1 * I B *1k

I1 * 20k I B *10k 15 V
I1 *10k I B *101k 14.3 V

multiply 2nd equation by 2 and subtract the first one

I B * 202k 10k 28.6 15
I CQ I B * 6.42mA

IB

13.6
64.2 A
212k

BJTs Practical Aspects

npn

V
I
R

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