Improving the

performance of an Op-Amp
by using FinFET Transistor
PROJECT GUIDE:
Dr.
V.N.RAMAKRISHNAN

16MVD0069 - Sanjeeva Dinesh

16MVD0070 - Raveen Kumar S
16MVD0085 P Raja sekhar

Motivation
Why do we need FinFETs?

Scaling & MOSFET Limitations

Potential Alternatives -SOI FInFET, MIGFET
Multi gate devices - Double Gate, Triple, Gate All Around FET
etc.

Motivation
Advantages of using FinFETs in Op-Amp Circuits:

Channel Length reduction

Reduced leakage
Excellent sub threshold slope
Better voltage gain

Aim and Objective

To design a FinFET transistor using TCAD.
To design a OP-Amp using FinFET transistor.

Literature Survey
Paper 1: "Simulation of a Miller OP-Amp with FinFETs at high temperatures" [1]
Disadvantage of MosFET is the occurrence short channel effect when we scale to less than 90nm.
In the process of reducing the short channel effect for a MosFET, the parasitic capacitance come
into picture which affects at high frequencies.

Paper 2:
Simulation of miller OP-Amp analog circuit with FinFET transistors [2]
The effect of immunity and ideal characteristics are observed and simulated method.
Short channel effects are reduced leading to a lower drain to source leakage in off state and to a
higher intrinsic transistor voltage gain.

Paper 3:
Comparison of Miller compensated OP-Amps designed using planar MosFET and
FinFET transistors [3]
Comparing the parameters of MosFET and FinFET which shows the FinFET based Op-Amp is better.
The slew rate of FinFET is 30.345 times greater than the MosFET based Op-Amp.

Paper 4:
Impact of fin width on digital and analog performances of n-FinFET[4]
Study the characteristics of FinFET by varying the width.

Methodology and Work Plan

Step 1: Literature Survey
Step 2: Generation of FinFET
Step 3: Simulation and analysis of the generated FinFET.
Step 4: Implementing the FinFET libraries in H-SPICE.
Step 5: Designing Op-Amp circuit using FinFET.
Step 6: Simulation and analysis of the Op-Amp circuit.
Step 7:Compare the parameters of MosFET and FinFET
OP-Amp

Future Direction
Review 1 : Literature survey, and study of TCAD
software.
Review 2 : Generation of FinFET using TCAD and
Analysis.
Review 3: Design of Op-Amp circuit using FinFET in HSPICE.

Reference
1. E. Contreras, A. Cerdeira, M. A. Pavanello, and A. CINVESTAV, "Simulation of a Miller
OpAmp with FinFETs at high temperatures," ECS Transactions, vol. 49, no. 1, pp. 177
182, 2012.
2. E. Contreras, A. Cerdeira, and M. A. Pavanello, Simulation of miller OpAmp analog
circuit with FinFET transistors, 2012 8th International Caribbean Conference on
Devices, Circuits and Systems (ICCDCS), 2012.
3. K. T. Thoomu, N. K. Adapa, S. A. R. Lekkala, and N. Murty, Comparison of Miller
compensated opamps designed using planar MoS and FinFET transistors, 2015 IEEE
International Conference on Computational Intelligence and Computing Research
(ICCIC), 2015.
4. V. Subramanian, A. Mercha, B. Parvais, J. Loo, C. Gustin, M. Dehan, N. Collaert, M.
Jurczak, G. Groeseneken, W. Sansen, and S. Decoutere, Impact of fin width on
digital and analog performances of n-FinFETs, Solid-State Electronics, vol. 51, no. 4,
pp. 551559, 2007.