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Phase Linearity
Sensor technology;
Sensor data collection topologies;
Data communication;
Power supply;
Data synchronization;
Environmental parameters and influence;
Remote data analysis.
Measurement
Physical Measurement
phenomenon Output
Measurement output:
interaction between a sensor and the environment surrounding
the sensor
compound response of multiple inputs
Measurement errors:
System errors: imperfect design of the measurement setup and
the approximation, can be corrected by calibration
Random errors: variations due to uncontrolled variables. Can be
reduced by averaging.
Sensors
Classification of Sensors
Mechanical quantities: displacement, Strain, rotation
velocity, acceleration, pressure, force/torque, twisting,
weight, flow
Thermal quantities: temperature, heat.
Electromagnetic/optical quantities: voltage, current,
frequency phase; visual/images, light; magnetism.
Chemical quantities: moisture, pH value
Specifications of Sensor
True value
measurement
Accuracy vs. Precision
Piezoelectric accelerometer
Nonzero lower cutoff frequency (0.1 1 Hz for 5%)
Light, compact size (miniature accelerometer weighing
0.7 g is available)
Measurement range up to +/- 500 g
Less expensive than capacitive accelerometer
Sensitivity typically from 5 100 mv/g
Broad frequency bandwidth (typically 0.2 5 kHz)
Operating temperature: -70 150 C
Capacitive accelerometer
Good performance over low frequency range, can measure
gravity!
Heavier (~ 100 g) and bigger size than piezoelectric
accelerometer
Measurement range up to +/- 200 g
More expensive than piezoelectric accelerometer
Sensitivity typically from 10 1000 mV/g
Frequency bandwidth typically from 0 to 800 Hz
Operating temperature: -65 120 C
Linear Potentiometer
Resolution (infinite), depends on?
High frequency bandwidth (> 10 kHz)
Fast response speed
Velocity (up to 2.5 m/s) Photo courtesy of Duncan Electronics
Low cost
Finite operating life (2 million cycles) due to contact
wear
Accuracy: +/- 0.01 % - 3 % FSO
Operating temperature: -55 ~ 125 C
Displacement Transducer
Pneumatic Retraction No
Repeatability 0.1um Courtesy of Microstrain, Inc.
References
Structural health monitoring using scanning laser
vibrometry, by L. Mallet, Smart Materials & Structures,
vol. 13, 2004, pg. 261
the technical note entitled Principle of Vibrometry from
Polytec
Shock (high-G) Sensing
Shock Accelerometer
Measurement range up to +/- 70,000 g
Frequency bandwidth typically from 0.5
30 kHz at -3 dB
Operating temperature: -40 to 80 C
Light (weighs ~ 5 g)
Angular Motion Sensing (Tilt Meter)
What is MEMS?
Acronym for Microelectromechanical Systems
MEMS is the name given to the practice of making and
combining miniaturized mechanical and electrical components.
K. Gabriel, SciAm, Sept 1995.
Synonym to:
Micromachines (in Japan)
Microsystems technology (in Europe)
Co-location of sensing,
computing, actuating, control,
communication & power on a
small chip-size device
High spatial functionality and fast
response speed
Very high precision in manufacture
miniaturized components improve
response speed and reduce power
consumption
MEMS Fabrication Technique
Miniaturization
micromachines (sensors and actuators) can handle
microobjects and move freely in small spaces
Multiplicity
cooperative work from many small micromachines
may be best way to perform a large task
inexpensive to make many machines in parallel
Microelectronics
integrate microelectronic control devices with sensors
and actuators Fujita, Proc. IEEE, Vol. 86, No 8
MEMS Accelerometer
Capacitive MEMS
accelerometer
High precision dual axis
accelerometer with signal
conditioned voltage outputs, all
on a single monolithic IC
Sensitivity from 20 to 1000
mV/g
High accuracy
High temperature stability
Low power (less than 700 uA
typical)
5 mm x 5 mm x 2 mm LCC
package
Low cost ($5 ~ $14/pc. in Yr.
2004)
Courtesy of Analog Devices, Inc.
MEMS Accelerometer
Piezoresistive MEMS accelerometer
Operating Principle: a proof mass attached to a silicon
housing through a short flexural element. The implantation of
a piezoresistive material on the upper surface of the flexural
element. The strain experienced by a piezoresistive material
causes a position change of its internal atoms, resulting in the
change of its electrical resistance
low-noise property at high frequencies
Reference
Zhang, R. and Aktan, E., Design consideration for sensing
systems to ensure data quality, Sensing issues in Civil
Structural Health Monitoring, Eded by Ansari, F., Springer,
2005, P281-290