Microelectronics

Circuit Analysis and Design

Donald A. Neamen

Chapter 3

The Field Effect Transistor

Neamen Microelectronics, 4e Chapter 3-1

McGraw-Hill
In this chapter, we will:
Study and understand the operation and characteristics of
the various types of MOSFETs.
Understand and become familiar with the dc analysis and
design techniques of MOSFET circuits.
Examine three applications of MOSFET circuits.

Investigate current source biasing of MOSFET circuits, such

as those used in integrated circuits.
Analyze the dc biasing of multistage or multitransistor
circuits.
Understand the operation and characteristics of the
junction field-effect transistor, and analyze the dc response
of JFET circuits.

Neamen Microelectronics, 4e Chapter 3-2

McGraw-Hill
 Basic Structure of MOS Capacitor

Neamen Microelectronics, 4e Chapter 3-3

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 MOS Capacitor Under Bias:
Electric Field and Charge

Parallel plate capacitor

Negative gate bias: Positive gate bias:

Holes attracted to gate Electrons attracted to gate

Neamen Microelectronics, 4e Chapter 3-4

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 Schematic of n-Channel
Enhancement Mode MOSFET

Neamen Microelectronics, 4e Chapter 3-5

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 Basic Transistor Operation

Before electron After electron

inversion layer is inversion layer is
formed formed

Neamen Microelectronics, 4e Chapter 3-6

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 Basic Transistor Operation

Neamen Microelectronics, 4e Chapter 3-7

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 Current Versus Voltage Characteristics:
Enhancement-Mode nMOSFET

Neamen Microelectronics, 4e Chapter 3-8

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 Family of iD Versus vDS Curves:
Enhancement-Mode nMOSFET

Neamen Microelectronics, 4e Chapter 3-9

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 p-Channel Enhancement-Mode
MOSFET

Neamen Microelectronics, 4e Chapter 3-10

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 Symbols for n-Channel
Enhancement-Mode MOSFET

Neamen Microelectronics, 4e Chapter 3-11

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 Symbols for p-Channel
Enhancement-Mode MOSFET

Neamen Microelectronics, 4e Chapter 3-12

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 n-Channel Depletion-Mode MOSFET

Neamen Microelectronics, 4e Chapter 3-13

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 Family of iD Versus vDS Curves:
Depletion-Mode nMOSFET

Symbols

Neamen Microelectronics, 4e Chapter 3-14

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 p-Channel Depletion-
Mode MOSFET

Symbols

Neamen Microelectronics, 4e Chapter 3-15

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Cross-Section of nMOSFET and pMOSFET

Both transistors are used in the fabrication of CMOS circuitry.

Neamen Microelectronics, 4e Chapter 3-16

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 Summary of I-V Relationships
Region NMOS PMOS

Nonsaturation vDS<vDS(sat) vSD<vSD(sat)

iD K n [2(vGS VTN )vDS v ] D

2
DS i K p [ 2 ( v SG V ) v
TP SD v 2
SD ]

Saturation vDS>vDS(sat) vSD>vSD(sat)

iD K n [vGS VTN ]2 iD K p [vSG VTP ]2
Transition Pt. vDS(sat) = vGS - VTN vSD(sat) = vSG + VTN

Enhancement VTN > 0V VTP < 0V

Mode
Depletion VTN < 0V VTP > 0V
Mode

Neamen Microelectronics, 4e Chapter 3-17

McGraw-Hill
 Conduction Parameters

W nCox ' W
NMOSFET Kn kn
L L

W p Cox W
PMOSFET Kp k
'
p
L L

where: Cox o tox

Neamen Microelectronics, 4e Chapter 3-18

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 Channel Length Modulation:
Early Voltage

Neamen Microelectronics, 4e Chapter 3-19

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 Body Effect

Neamen Microelectronics, 4e Chapter 3-20

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 Subthreshold Condition

Neamen Microelectronics, 4e Chapter 3-21

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 NMOS Common-Source Circuit

Neamen Microelectronics, 4e Chapter 3-22

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 PMOS Common-Source Circuit

Neamen Microelectronics, 4e Chapter 3-23

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 Load Line and Modes of Operation:
NMOS Common-Source Circuit

Neamen Microelectronics, 4e Chapter 3-24

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 Problem-Solving Technique:
NMOSFET DC Analysis
1. Assume the transistor is in saturation.
a. VGS > VTN, ID > 0, & VDS VDS(sat)
2. Analyze circuit using saturation I-V relations.
3. Evaluate resulting bias condition of transistor.
a. If VGS < VTN, transistor is likely in cutoff
b. If VDS < VDS(sat), transistor is likely in
nonsaturation region
4. If initial assumption is proven incorrect, make
new assumption and repeat Steps 2 and 3.

Neamen Microelectronics, 4e Chapter 3-25

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 Enhancement Load Device

Kn = 1mA/V2
VTN = 1V

Neamen Microelectronics, 4e Chapter 3-26

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 Circuit with Enhancement Load
Device and NMOS Driver

ML is always in
saturation.

MD can be biased
either in saturation or
nonsaturation region.

Neamen Microelectronics, 4e Chapter 3-27

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 Voltage Transfer Characteristics:
NMOS Inverter with Enhancement Load Device
vI < VTN vI > VTN

Neamen Microelectronics, 4e Chapter 3-28

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 NMOS Inverter with
Depletion Load Device

Neamen Microelectronics, 4e Chapter 3-29

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 CMOS Inverter

Neamen Microelectronics, 4e Chapter 3-30

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 2-Input NMOS NOR Logic Gate

V1 (V) V2 (V) VO (V)

0 0 High
5 0 Low
0 5 Low
5 5 Low

Neamen Microelectronics, 4e Chapter 3-31

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 MOS Small-Signal Amplifier

Neamen Microelectronics, 4e Chapter 3-32

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 Current
Mirrors

Neamen Microelectronics, 4e Chapter 3-33

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 2-Stage Cascade Amplifier

Source follower

Common-source

Neamen Microelectronics, 4e Chapter 3-34

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 NMOS Cascode Circuit

Neamen Microelectronics, 4e Chapter 3-35

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 Cross Section of n-Channel Junction
Field Effect Transistor (JFET)

Neamen Microelectronics, 4e Chapter 3-36

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 Cross Section of n-Channel MESFET

Neamen Microelectronics, 4e Chapter 3-37

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