IED Modelling for Triple Frequency

Capacitive Sheath
EEE 400 : Project/Thesis

Prepared by
Supervised by

Purab Ranjan Sutradhar 1106054

Dr. Md. Nasim Ahmed Dewan
Ismat Jarin 1106122 Professor
Dept. of EEE, BUET
Dept. of EEE, BUET
OUTLINES
o Introduction
o Brief Theory of Plasma
o RF Plasma Models
o Results
o Conclusion
o Future Scope of This Work
Introduction
Importance of Plasma
Material Processing
Etching and sputtering
Plasma arc welding

Multi Frequency RF Plasma

Dual and Triple frequency RF plasma
Independent control of ion flux and IED
Now largely used in processing technology
Introduction Contd.

Previous Work: Multi Frequency RF Plasma

Dual Frequency Collision-less Model
Source depedency of RF Plasma
Influence of Voltage Vs. frequency ratio on IEDF

Motivation of Our Work

Development of HF IEDF Model
Analysis Effect of RF source on
Decrease for better output
Objective
o To analyze SF Collision-less Behavior of RF CCP Plasma
o To analyze SF Collisional RF CCP Position and V(t)
o To reproduce TF Collision-less IEDF Model
o To study the effects of source parameters on IED
Brief Theory Of Plasma
Definition
Highly Ionized physical state of matter

4th state of matter

Obtained by ionizing gaseous matter

Ionization
Gas Recombination
Plasma
Brief Theory of Plasma contd..

Fundamental Properties

Highly Conductive
Quasi Neutral ni=ne
Collective motion behaviour
Dynamic equilibrium (ionization and recombination)
Highly Energetic particles available
Brief Theory of Plasma Contd

Types of Plasma

Plasma

Artificial Plasma Natural Plasma

Thermal or Hot Non-thermal or

Plasma Cold Plasma
Cold Plasma
1.Thermal non-equilibrium
High electron temperature 104-105 K (1-10 eV )
Low overall temperature ( <1000 K )

2. Sustained by Electric/magnetic Power Sources

Cold Plasma Classifications

o DC Coupled Plasma
o Inductively Coupled Plasma
o Capacitively Coupled Plasma
o Electron-Cyclotron Resonance Plasma
o Microwave Plasma
Process Plasma

Commercially used plasma for fabrication process

Electrically sustained cold plasma

CCP configuration
Types of Plasma Reactor
Electrodes Plasma Jet

Substrate

Cooling

Planar Reactor Downstream Reactor

Barrel Reactor
Capacitively Coupled Plasma (CCP)
Uses planar reactor
Top plate grounded
Substrate on bottom plate
(with 13.56MHz RF supply)

CCP using RF source

Lower sheath voltage
Higher energy-efficiency
Self-bias
RF Plasma Models

oCollision-less SF sheath
oCollisional SF sheath
oCollision-less TF IED
Collision-less RF sheath Model
Time invariant ion-sheath
Constant ion-flux throughout the n
sheath:
niui n0uB
n0

Time variant electron sheath s(t) electrode

Plasma
Time average electron density: ni
ne
2
ne ( x) 1 ni ( x)
2
X
0 s(t) Sm

Structure of High voltage capacitive RF sheath

RF Plasma Models Contd.

Collision-less RF sheath Model

Assumptions

Ion motion collision-less, Responds to time n

avg. electric field.
n0
Ion enters sheath with Bohm velocity
eTe
Debye length(D) << sheath length uB electrode
M Plasma
ni
Equal electron ion density on the left of
ne
electron sheath, s(t) X
0 s(t) sm
RF Plasma Models Contd.

Collision-less RF sheath Model

Model Equations:
1 x 1 3 11 1
(1 cos ) sin sin 3 3 cos cos 3
H s0 8 2 18 3

1
ni 3 1 1
1 H sin 2 cos 2
n0 8 4 2

2
1 1 3 1 1
1 H sin 2 cos 2
Te 2 2 8 4 2

J0 1 s02
Where, H
e 0 Te 2n0

2D
Collisional RF sheath Model
Similar to collision-less model
Except, collisional ion motion

1/ 2
2i s
H depends on ion mean free path H 2 02 n
D

n0

electrode
Plasma
ni
ne
X
0 s(t) sm
RF Plasma Models Contd.

Collisional RF sheath Model

Model Equations:
1/ 2

H sin cos
x
sin d
s0 0

3/ 2
H s02
Te

2D sin cos sin d
0

1/ 2
2i s
Where, H 2 02
D
Triple Frequency Capacitive Discharge Model

Features:

Three separate RF power sources

Voltage or current sources
Effective frequency and effective voltage /
current density for the system
Triple Frequency Capacitive Discharge Model Contd

Assumptions

1. Jrf=Jsupply
2. Time independent electric field, collision-less sheath
3. Sheath current displacement current
Triple Frequency Capacitive Discharge Model
Contd
Equations:
Effective freq. for current sources:
1 1 / 2

J 2 J 3 1 J 2 1 J 3 4 1 2
2 2 2 2 2 2
J 2 1 J3
eff 1 1 1 1
3 2 J1 3

J1 23
1 1 2 1 3 1
J J J J

Effective freq. for voltage sources:

1 1 / 2

2 V2 3 V3 V2 V3 4 V2 V3 V2 V3
2 2 2 2 2 2

1 1 1
eff
1 V1 1 V1 V1 V1 3 V1 V1 V1 V1

2 2 2
f(E) = ( )[1 - ( ) (E - eVs ) 2 ]-1/2
eff E E
Triple Frequency Capacitive Discharge Model
Contd
Equations:( contd..)
2 2
IEDF: f(E) = ( )[1 - ( ) 2 (E - eVs ) 2 ]-1/2
eff E E

1/ 2
8eVs 2eVs 1 2 3
IED Width: E

3s M 1 2 3
Results
For SF Collision-less Sheath:
1. Position x Vs. phase
1.6

J0 1 s02 1.4 H=10

H
e 0 Te 2n0 2D 1.2

Non-linear in nature 1 x
H s~0 0.8 H=100

Less dependent on H 0.6

This relation is used to express

0.4
other parameters w.r.t. x
0.2

0
0 0.5 1 1.5 2 2.5 3

Fig: Normalized position versus phase for self-consistent RF
sheath for variable H
For SF Collision-less Sheath:
Ion density and net charge density Vs. Position

x , Ion density
Ion density is non-zero(even at the electrode edge )
6

5
x , Net imbalanced charge
4

n
H
n0 3

2
n=ni

1
n=ni-ne

0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
1 x
H S~0

Fig: Normalized ion density and net charge density versus

normalized position for H >> 1
For SF Collision-less Sheath:

Electric Field (E) Vs. Position (x)

Electric field increasing towards the 3 H=

electrode
2.5
H=10

The slope of electric field is J0

2

E00! : E7
decreasing J~0
0
_____ H=10
----------H=100
1.5

1
Decreasing slope explained by
decreasing of net imbalanced 0.5
charge
0
0 0.5 1 1.5
1 x
H ~
s0
Fig: Normalized electric field versus normalized
position for H = 10 and H >> 1
For SF Collision-less Sheath:
Time-average potential Vs. position

Almost linear relationship 5

4.5
Positive slope
4
Slope increasing towards the 3.5
electrode
2
3
-2/H
! 2?
H 2 2.5

1.5

0.5

0
0 0.5 1 1.5
1 x
H S~0
normalized time-average potential versus normalized position for
H>>1
For SF Collisional Sheath:
Position Vs. phase

Positive slope
Non-linear oscillation motion
Similar to Collision-less model

Fig: Normalized position versus phase for self consistent

Collisional, RF sheath
 For SF Collisional Sheath:
Sheath voltage V(t) Vs. t

Time variant voltage response:

V(t) periodic function of t (T= 2)
DC value at t =0
Higher harmonics gradually decrease

2nd harmonics 19.53% and 3rd harmonics 5.3%

of fundamental
Fig: Normalized time-varying sheath voltage versus t
 For TF Collision-less Sheath:
IEDF Vs. Ion Energy (For current sources)

1MHz/30MHz/120MH
Current of HF source -> feff -> Vs _______.0628 A /.157 A/0 A
- - - -.0628A/.942A/.785A

Ion Energy Width - --- --.0628A/.942A/3A

Fig: IEDF of collision-less RF sheath model through the effective

frequency with respect to current ratio
Ion Energy Width decrease with Increasing HF (120 MHz) current
For TF Collision-less Sheath:
IEDF Vs. Ion Energy (For Voltage Sources)

feff Depend on ratio of voltage sources

Not depend on LF (1 MHz) source 1MHz/30MHz/120MHz
____270V /10V /20V
____150V/ 100V/ 50V
Ion Energy Width, for feff ____100V/100V/100V
_____50V/100V/150V
____ 10V/ 10V/ 280V

So Ion Energy Width depend on the Ion Energy (eV)

Fig: IEDF of a collision-less RF sheath model through the effective

voltage ratio of TF sources frequency with respect to voltage ratio
Conclusion

RF sources dominate TF IEDF

RF discharge parameters are functions of RF source for TF
Ion Energy width controlled by feff
Current Driven CCP more desirable than Voltage Driven CCP
because of much lower for feff current driven CCP
For Voltage driven CCP
Future Scope of This Work

o Collisional Multi frequency RF

o Time Dependent IEDF
o Inductive Coupled Plasma
o Magnetization of Plasma