Electrical Energy Universidad

Conversion and de Oviedo

Power Systems

Power Electronic Devices

Semester 1

Power Supply
Lecturer: Javier Sebastin
Systems
 Outline

Review of the physical principles of operation of semiconductor

devices.
Thermal management in power semiconductor devices.
Power diodes.
Power MOSFETs.
The IGBT.
High-power, low-frequency semiconductor devices (thyristors).

2
Electrical Energy Universidad
Conversion and de Oviedo
Power Systems

Lesson 5 The Insulated Gate Bipolar

Transistor (IGBT).
Semester 1 - Power Electronic Devices

3
 Outline

The main topics to be addressed in this lesson are the following:

Introduction.

Review of the basic structure and operation of bipolar junction

transistors (BJTs).

Internal structures of IGBTs.

Static characteristics of the IGBTs.

Dynamic characteristics of the IGBTs.

Losses in the IGBTs.

4
 Introduction (I).

Power MOSFETs are excellent power devices to be

used in power converters up to a few kWs. Channel
They have good switching characteristics because
they are unipolar devices. Gate
Source N+
This means that the current is due to majority
carriers exclusively and that it does not pass
- + P
through any PN junction.
N-
Due to this, conductivity modulation does not take
place. N+
This fact limits the use of these devices for high
power applications, because high-voltage devices Drain
exhibit high RDS(ON) values.
The challenge is to have a device almost as fast as Drain Current
a MOSFET, as easy to control as a MOSFET, but with
conductivity modulation.

5
 Introduction (II).

On the other hand, Bipolar Junction Transistors (BJTs)

are devices in which the current passes through two PN
junctions.
Although the current is due to the emitter majority Base Current
carriers, these carriers are minority carriers in the base.
Therefore, the switching process strongly depends on SiO2 B E
the minority base carriers.
N+ P -
Due to this, BJTs (bipolar devices) are slower than
MOSFETs (unipolar devices). N-
Moreover, the control current (base current) is quite
high (only 5 -20 times lower than the collector current) N+
in power BJTs.
However, as the collector current in BJTs passes C
through two PN junctions, they can be designed to
have conductivity modulation. Collector Current
As a consequence, BJTs have superior characteristics
in on-state than MOSFETs.
6
 Introduction (III).
Summary of a comparison between BJTs and MOSFETs

Switching Control Conductivity Losses in on-state in

modulation high voltage devices
BJT Slow Difficult Yes Low
MOSFET Fast Easy No High

Could we have the advantages of both types of devices together in a

different device?
The answer is that we can design a different device with almost all the
advantages of both BJTs and MOSFETs for medium and high voltage (from
several hundreds of volts to several thousand of volts).
This device is the IGBT (the Insulated Gate Bipolar Transistor).
To understand its operation, we must review the structure and operation
of the BJT.

7
 Review of the basics of BJTs (I).

PNP transistor: Two P-type regions and a N-type region

NPN transistor: Two N-type regions and a P-type region

Collector (P) Collector (N)

Base Base
(N) (P)
PNP Emitter (P) NPN Emitter (N)

Conditions for such device to be a transistor:

The emitter region must be much more doped than the base region.
The base region must be a narrow region (narrower than the diffusion
length corresponding to the base minority carrier).
8
 Review of the basics of BJTs (II).
Example: a PNP-type silicon low-power transistor
(the actual geometry is quite different)

P
+ N
- P
Emitter Base Collector
1m

The emitter region must be much more doped than the base region.

NAE=1015 atm/cm3 NDB=1013 atm/cm3

The base region must be narrower than the diffusion length
corresponding to the holes in the base region.

WB = 1 m << Lp = 10 m
9
 Review of the basics of BJTs (III).
Operation in active region: E-B junction is forward biased and
B-C junction is reverse biased.
The concentration of minority carries when the junctions have
been biased can be easily deduced form slide #80, Lesson 1.

V1 V2
E B C
P+ -+ N- +- P
High gradient High
High gradient High
current due to holes in
WB current due to holes in
the E-B junction the B-C junction

Low gradient low reverse

Low gradient low forward
current due to electrons in
current due to electrons in
the B-C junction
the E-B junction
x
Electrons in the emitter
0- 0+ WB- WB+ Electrons in the collector 10
Holes in the base
 Review of the basics of BJTs (IV).
Currents passing through the transistor in active region.

Minority carrier concentration iE -iC

E C
pB3 Linear
scale VEB -i
B B V2
pB2

pB1
nE nC
0
VEB1 < VEB2 < VEB3
Currents Base contact

iE3 -iC3 iE ISevEB/VT

iE2 -iC2 -iC iEa (a 0.98-0.995)

iE1 -iC1 iC biB (b 20-200)

0 11
 Review of the basics of BJTs (V).
Operation in cut-off region: E-B and B-C junctions are reverse biased.
Minority carrier concentration

Linear
pB (active) scale -iC
iE
nE (active) V1 V2
nE (cut-off) pB (cut-off) nC Active region
0
Currents Base contact

iE -iC
IE (active) -IC (active) V1 V2

Cut-off region
IE (cut-off) -IC (cut-off)
0 12
 Review of the basics of BJTs (VI).
Operation in saturation region: E-B and B-C junctions forward biased.
Minority carrier concentration
pB (saturation) Linear iE -iC
scale V1 V2
nC (sat.)
Active region
nE nC (active)
pB (active)
0
Currents Base contact iE -iC
V1 V2
iE (saturation)
-iC (saturation)
Saturation region
However, the operation in
iE (active) -iC (active) saturation usually takes place in
other type of circuits.
0 13
 Review of the basics of BJTs (VII).
Usual circuit to study the saturation region.
We are going to increase the
Minority carrier concentration value of V1.

Linear The transistor will be in active

pB (sat.) scale region while vCB < 0. When vCB >
pB (boundary) 0, it is in saturation.

As the collector current is

nE pB (active) nC approximately constant,
these concentration profiles
0
have the same slope.
Currents -iC

iE (saturation)
-iC (saturation) R
vCB +
iE (boundary) V2/R
-iC (boundary) -
-iB V2
iE (active) -iC (active) V1
0 iE 14
 Review of the basics of BJTs (VIII). Very important!!!
We can increase the height of point pB1 as much as we want, because we can
increase V1 indefinitely.
However, the collector current ( emitter current) is limited to the maximum
possible value of V2/R (otherwise, the transistor would behave as a power
generator, which means that energy is generated from nothing).
As the current passing through the transistor (from emitter to collector) is limited,
then the slope of pB is also limited.
As a consequence, pB2 must also increase to maintain the current constant, which
implies that the base-collector junction becomes forward bias.

The transistor becomes saturated.

Minority carrier concentration
pB1 pB (sat.) Linear scale
-iC
Not possible R
pB1 vCB +
pB2 -
-iB V2
nE pB (bound.) pB2 nC V1
0 iE 15
 Review of the basics of BJTs (IX).
Output characteristic curves.

Voltage and current references Output curves

iC
iC [mA]
iB
+ iB=-400A
+ vCE -40
iB=-300A
vBE
-
- iB=-200A
-20
iB=-100A
Saturation
iB=0A vCE [V]

0 -2 -4 -6
Active
Cut-off
16
 Review of the basics of BJTs (X).

The on-state of bipolar transistors is quite good, because the

voltage drop between collector and emitter is quite low.
However, the turn-off is quite slow (next slide).

-iC
iC
R R
+ 0.5 V -N
0.5 V P
- +
- +
-iB 0.2 V iB 0.2 V
N P
P
+ -
N

0.7 V iE V2 0.7 V -iE V2

17
 Review of the basics of BJTs (XI).

The longest time in the switching process of a bipolar transistor

is the one corresponding to eliminating the excess of minority
carriers in the base region when the transistor turns-off.

Concentration Transistor in saturation

P+ N-
pB (sat.) P These excess carriers
(holes in this case)
must be eliminated to
turn-off the transistor
nE pB Cut-off nC
0

Transistor in cut-off

18
 Review of the basics of BJTs (XII).

A good trade-off between switching speed and voltage drop in on-state can
be reached using anti-saturation circuitry (circuits to maintain the transistor
just in the boundary between active region and saturation).
-iC

Excess carriers to be eliminated R

when the transistor turns-off +
0V P-
(lower than in saturation). -
-iB 0.7 V
N
Concentration +
P
P+ N-
P iE
0.7 V V2
pB (boundary)
Voltages just in the boundary
between active region and
saturation
nE pB Cut-off nC
0 19
 Review of the basics of BJTs (XIII).

Hard-saturation circuits
(the voltage across the transistor terminals is the same).

0.7 V R R
P +
N V2
0.2 V 0.7 V
-iB - P +
P - P + -iB
0.5V + N 0.2 V
N 0.2 V
R -iB - P - V2
P - V2
0.5V + 0.5V

20
 Review of the basics of BJTs (XIV).

Soft-saturation circuit
(anti-saturation circuit).
R
0.7 V +
R -iB -
P +
N 0.7 V

P -
0.7 V + S1
P +
-iB - V2
N 0.7 V

P - V2 In soft-saturation (boundary),
when S1 closed.
In cut-off, when S1 open.
21
 Review of the basics of BJTs (XV).

As a bipolar transistor is a bipolar device, conductivity modulation

can take place if the transistor is properly designed.

SiO2
B E Drift region

N+ P
P+ N- N+
N-
Structure needed to have conductivity
modulation
N+ (from slide #100, Lesson 1)

C
22
 Principle of operation and structure of the IGBT (I).

The IGBT (the Insulated Gate Bipolar Transistor) is based on a structure that
allows:
Conductivity modulation (good behaviour for high voltage devices when
they are in on-state).
Anti-saturation (not so slow switching process as in the case of complete
saturation).
And control from an insulated gate (as in the case of a MOSFET).

R R

P P
N N
D
P P
V2
S1 V2
G
S
23
 Principle of operation and structure of the IGBT (II).

Collector
Collector (C)
P E
N
D B Gate (G)
P
C
G Emitter (E)
S
Gate
Schematic symbol for a N-channel IGBT.
Emitter
Simplified equivalent
circuit for an IGBT.

Another schematic symbol also used. 24

 Principle of operation and structure of the IGBT (III).

Emitter Internal structure (I).

Gate Emitter (E)
Gate (G)

Emitter Gate
Collector
Collector (C)
N+ N+
N- P
N+
P+
Collector
25
 Principle of operation and structure of the IGBT (IV).
Internal structure (II).
Emitter Emitter

Gate Gate

Gate
Emitter
Rdrift
N+ N+
Collector
P
Simplest model Rdrift N-
for an IGBT. N+
P+ Collector

Model taking into

Collector account the drift
region resistance.

26
 Principle of operation and structure of the IGBT (V).
The IGBT blocking (withstanding) voltage.

Depletion Emitter
region Gate
Gate
Emitter V2

N+ N+ V2
Rdrift
P
N- R
N+
R
P+
Collector
Collector

27
 Principle of operation and structure of the IGBT (VI).
The IGBT conducting current (a first approach).
Conductivity
modulation
Transistor Emitter
V1
effect
Gate
V1 Gate
Emitter V2

N+ N+ V2
Rdrift
P
Rdrift N- R
N+
R
P+
Collector
Collector

28
 Principle of operation and structure of the IGBT (VII).

A more accurate model.

However, there is another parasitic transistor. Emitter
Gate
Gate
N+
Emitter
Rbody
N+ N+ P
Rdrift
Rbody P N-
Rdrift N-
N+ N+
P+
Collector P+
Model taking into account the Collector
MOSFET-body resistance. Model taking into account the
parasitic NPN transistor.
29
 Principle of operation and structure of the IGBT (VIII).

Emitter Emitter
Gate
Gate
N+
Rbody
Rbody
P
Rdrift
N-
Rdrift
N+

P+
Collector Collector
Model taking into account the
parasitic NPN transistor.
The final result is that there
is a parasitic thyristor. 30
 Principle of operation and structure of the IGBT (IX).

The basics of the thyristor: the PNPN structure (I).

Emitter
Gate

N+ Rbody
N+ E1
N+ E1
B1
P P B1 P
P C2
C2
N- C1
N C1 N
N B2 B2
N+
E2
P+ P+ P+ E2
Collector

31
 Principle of operation and structure of the IGBT (X).
The basics of the thyristor: the PNPN structure (II).

N+ Forward
E1 N+ - bias
P + VDC
B1
C1 C2 Reverse - P
B2
N +bias
R
N
P+
E2 -
Forward P+
bias +
There are two junctions forward biased and one is reverse biased.
As a consequence, the PNPN device can block (withstand) voltage
without conducting current.
However, it will be able to conduct current as well,
as it is going to be shown in the next slide. 32
 Principle of operation and structure of the IGBT (XI).
The basics of the thyristor: the PNPN structure (III).

Forward
- Forward
bias VDC
- bias
VB
N+ + N+ P
-
+ VDC

N
P
Reverse -P N +
+ +-
+bias
N
R
- -+ P
R
-
Forward
Forward N
- iR
P+ P+
bias + bias!! Forward
bias +
If VB is high enough (0.6-0.7 V in a silicon device), then the NPN transistor
becomes saturated.
As a consequence, the base-collector junctions corresponding to both the NPN
and the PNP transistor become forward biased. Both transistors are saturated.
Therefore, all the junctions are forward biased right now and the voltage across
the device is quite low (e.g., 0.9-1.2 V). The current passing through R can be
33
quite high (approximately VDC/R).
 Principle of operation and structure of the IGBT (XII).
The basics of the thyristor: the PNPN structure (IV).

VB VB
N+
- iB_1
iB N+
- iB_1=iC_2
Q1
P + VDC
Q1
P + VDC
+ +
N -i + iC_2 N -i +
C_1=iB_2 P
C_1=iB_2 P
-N Q2 R -N Q2 R
- P+
iR - iR
P+
+ +
Initially, the current needed for transistor Q1 to start conducting (active
region) comes from the voltage source VB.
When iC_1 increases, iC_2 strongly increases because iC_2 = b2iB_2 = b2iC_1.
Therefore, current iB_1 will increase a lot due to the iC_2 component and the
transistors become saturated very fast.
As iC_2 is the main current needed to maintain both transistors saturated, the
34
situation does not change if we remove VB.
 Principle of operation and structure of the IGBT (XIII).
The basics of the thyristor: the PNPN structure (V).
A PNPN structure has two different stable states (so, it works as a flip-flop):

As a open-circuit (IR = 0). As a short-circuit (IR VDC/R).

N+
- Forward
bias N+
- iB_1=iC_2
P +
VDC VDC
Q1
P + Q1
-Reverse +
N
- Forward
N
+ bias - P bias
+ P
+ Q2 R -N Q2 R
Forward
-
N
iC_1=iB_2 -
P+
P+
bias + iR = 0
+
iR VDC/R
The device state at a specific moment depends on whether Q1 emitter-base
junction has been forward biased previously.
The only way to turn-off the device is by decreasing IR up to zero. 35
 Principle of operation and structure of the IGBT (XIV).
The IGBT conducting current (actual paths).
Emitter

N+
Gate
- -
Channel Rbody N+ R N+
body
P
Rbody

N-
+ P
+ P

N
Q1
N P
N+ Q2 N

P+ P+ P+
Collector
BJT current BJT current
BJT current MOSFET current

The voltage across Rbody must not be high enough to turn-on the PNPN
structure, which is called latch-up.
Else, the total device cannot be turned-off by the gate voltage any more. 36
 Principle of operation and structure of the IGBT (XV).
To avoid the IGBT latch-up, Rbody must be as low as possible.

Emitter Emitter
Gate Gate

N+ N+
Channel
Rbody P P+ P
Channel
N- N-
N+ N+

P+ P+
Collector Collector

BJT current BJT current

The new P+ region decreases Rbody, thus increasing the value of the current
needed to reach the voltage drop on Rbody corresponding to latch-up.
37
 Principle of operation and structure of the IGBT (XVI).

The IGBT cannot conduct reverse current when vGE = 0 (it is not as the MOSFET).
C
C
P
P
D N
N
Parasitic
diode P
G P
G
G
S External
diode
E
E
Reverse current
Reverse current Reverse current
This means that it is able to block reverse voltage.
Symmetrical IGBTs are especially designed for blocking reverse voltage.
However, they have worse forward voltage drop than asymmetrical (standard)
IGBTs.
38
To conduct reverse current when vGE = 0, an external diode must be added.
 Principle of operation and structure of the IGBT (XVII).
Asymmetrical versus symmetrical IGBT structures.

Emitter
Emitter
Gate
Gate
N+ N+
P+ P P
P+
N-
N-
N+

P+ P+
Collector
Collector

Asymmetrical IGBT Symmetrical IGBT

(also called punch-through IGBT). (non-punch-through IGBT).
39
 Static output characteristic curves of a IGBT.
C
vEB_BJT +
iC [A]
vGE = 10V
-
6
vGE = 8V
vGE = 6V
iD [A]
vGS = 10V G 4
6
vGS = 8V E
vGE = 5V
vGS = 6V
2
4
vGE = 4V
vGS = 5V vGE < VGE(th) = 3V
2 0
2 4 vCE [V]
vGS = 4V
vEB_BJT
vGS < VGS(TO) = 3V
0 Static output characteristic curve of a IGBT.
2 4 vDS [V]
It can be easily obtained from the MOSFET
Static output characteristic curve characteristic curve by adding the voltage
of a MOSFET. drop vEB_BJT corresponding to the emitter-to-
It is also the one corresponding to base junction of the BJT part of the IGBT.
the MOSFET part of a IGBT. 40
 General characteristics of the IGBTs (I).

We will use a specific IGBT to address the general IGBT characteristics.

41
 General characteristics of the IGBTs (II).
General information regarding the IRG4PC50W.

42
Static characteristics of the IGBTs (I).

43
Static characteristics of the IGBTs (II).

IC_max @ T = 50 oC: 55 A

IC_max @ T = 75 oC: 48 A

44
Static characteristics of the IGBTs (III).
Asymmetrical IGBT

45
 Static characteristics of the IGBTs (IV).
Static output characteristic curve for a given vGE voltage.

iC [A]
6 vGE = 15V

0 vCE [V]
2 4
vEB_BJT
As in slide #40 of this lesson.

vEB_BJT 1V
46
Static characteristics of the IGBTs (V).

Thermal behaviour
like a MOSFET

Thermal behaviour
like a BJT

47
 Dynamic characteristics of the IGBTs (I).
Turn-off in a IGBT with inductive load and ideal diode
vGE (see slide #32, lesson 4).
C
vGE(th)

G
iC
E

MOSFET-part turn-off
IL
BJT-part turn-off

iC
IGBT tail
A RG VDC
C
vCE VG +
G
B + vCE
VG vGE E
-
-
48
 Dynamic characteristics of the IGBTs (II).
Comparing IGBT and MOSFET Turn-off.
vGE IGBT turn-off
C MOSFET turn-off

vGE(th) D
G
G
S
vGS
iC E vDS(TO)

MOSFET-part turn-off iD

BJT-part turn-off

IGBT tail
vCE Period with vDS
switching losses

Switching losses
49
 Dynamic characteristics of the IGBTs (III).
Turn-on in a IGBT with inductive load and ideal diode
(see slides #32-39, lesson 4, for comparison).
vGE
C
vGE(th)

iC E
Period with IL
switching losses
iC
A RG VDC
C
VG G
+
vCE B + vCE
MOSFET-part turn-on VG vGE E
-
-
BJT-part turn-on
50
 Dynamic characteristics of the IGBTs (IV).

Actual turn-on and turn-off waveforms with inductive load, taking into account
the diode real behaviour (recovery times) and the stray (parasitic) inductances.

51
Dynamic characteristics of the IGBTs (V).

52
Dynamic characteristics of the IGBTs (VI).
Parasitic capacitances and gate charge.

53
 Losses in IGBTs.

Conduction losses can be computed from the static output

characteristic curve (see slide #46 of this lesson).

Switching losses can be computed from the information given by the

manufacturer.

54