13 Penguat Transistor

Circuits and Analog Electronics
Ch6 Basic BJT Amplifiers Circuits
6.1 Bipolar junction transistors (BJTs)

6.2 Single-Stage BJT Amplifiers
6.3 Frequency Response
6.4 Power Amplifiers
References: Floyd-Ch-3, 5, 6; Gao-Ch7;

Key Words:
Construction of BJT
BJT in Active Mode
BJT DC Model and DC Analysis
C-E Circuits I-V Characteristics
DC Load Line and Quiescent Operation Point
BJT AC Small-Signal Model
This lecture will spend some time on understanding

how the bipolar junction transistor (BJT) works based
on what we have known about PN junctions. One way
to look at a BJT transistor is two back-to-back diodes,
but it has very different characteristics.
Once we understand how the BJT device operates, we
will take a look at the different circuits (amplifiers)
which we can build.
Construction of Bipolar junction transistors
Emitter-base Base region

junction (very narrow)
Emitter region Collector
Collector region
Emitter
Base Collector-base
junction

Construction of Bipolar junction transistors
NPN BJT shown

3 terminals: emitter, base, and collector
2 junctions: emitter-base junction (EBJ) and collector-base
junction (CBJ)
These junctions have capacitance (high-frequency model)
BJTs are not symmetric devices
doping and physical dimensions are different for emitter
and collector
Standard bipolar junction transistor symbols
Depending on the biasing across each of the junctions, different

modes of operation are obtained cutoff, active and saturation

BJT in Active Mode
Two external voltage sources set the bias conditions for active
mode
EBJ is forward biased and CBJ is reverse biased

BJT in Active Mode
IEIENIEP IEN
Forward bias of EBJ injects electrons from emitter into base

(small number of holes injected from base into emitter)

BJT in Active Mode
IB IBN IEP
Most electrons shoot through the base into the collector

across the reverse bias junction
Some electrons recombine with majority carrier in (P-type)
base region

BJT in Active Mode
IC = ICN + ICBO
Electrons that diffuse across the base to the CBJ junction are
swept across the CBJ depletion region to the collector.

BJT in Active Mode
IEIENIEP IEN IC = ICN + ICBO
IE = IB + IC
Let ICNIE
IBIBNIEP
IC IC (1) = IB + ICBO
---common-base current gain
IE

BJT in Active Mode
IEIENIEP IEN IBIBNIEP IC=ICN+ICBO IE=IB+IC
IC
IC (1)= IB+ICBO
IE

Let I C I B (1 ) I CBO
1
IC
Beta: ---common-emitter current gain
IB
I E I C I B (1 ) I B
I C I B I CEO I B
I I
C E

BJT Equivalent Circuits
iB iC

vBE vCE
iB

iE

BJT DC model
IB IC

VCE Use a simple constant-VBE

VBEVon
model
IB Assume VBE = 0.7V

IE


BJT DC Analysis
Make sure the BJT current equations and

region of operation match
VBE > 0,
VBC < 0, VE < VB <VC
Utilize the relationships ( and ) between

collector, base, and emitter currents to solve
for all currents
I E I C I B (1 ) I B

I C I B
I I
C E

Base-emitter Characteristic(Input characteristic)
i B f (v BE ) vCE C

Collector characteristic (output characteristic)
iC f (VCE ) iB C
iB = 40 A

Collector characteristic (output characteristic) iC f (VCE ) iB C

Collector characteristic
Saturation
Saturation occurs when the

supply voltage, VCC, is
across the total resistance
of the collector circuit, RC.
IC(sat) = VCC/RC
Vsat
Once the base current is high enough to produce saturation, further increases in
base current have no effect on the collector current and the relationship IC = IB is
no longer valid. When VCE reaches its saturation value, VCE(sat), the base-collector
junction becomes forward-biased.

When IB = 0, the transistor is in

cutoff and there is essentially no
collector current except for a
very tiny amount of collector
leakage current, ICEO, which can
usually be neglected. IC 0.
In cutoff both the base-emitter

and the base-collector junctions
Cutoff
are reverse-biased.

linearity
Discussion of an amplification effect

vi Ri iB
vo RL iC
vBE vCE
Ri RL
iB iC
With iB iC vi vo
E.g. for common-base configuration transistor:

vo
Av 50 ~ 300
vi

DC Load Line and Quiescent Operation Point
Q-point
VCC
ICQ . Q
VCEQ
VCC VBE VCC
Base-emitter loop: I B 40( A)
Rb Rb
DC load line
Collector-emitter loop: vCE VCC iC RC 10 iC 4k

BJT AC Small-Signal Model
iB
ib ic
iC

vBE vCE rbe ib vce

vbe
iB

iE ie

26( mV )
rbe 300 (1 )
I E (mA)
We can create an equivalent circuit to model the transistor for small signals
Note that this only applies for small signals (vbe < VT)
We can represent
the small-signal model for the transistor as a voltage controlled
current source (i E I S e vBE / VT ) or a current-controlled current source (ic = ib).
signals, approximate exponential curve with a linear line.
For small enough
C
i I E I S e v BE / VT
BJT fundamentals: VBE 0.7V

I E IC I B 1 I B IC
IC I B
Summary for three types of diodes:
C-C C-E C-B
Input IB IB IB
Output IE IC IC
Z at Zin Z at Zin
Functions Z at Zin Vat Vin Vat Vin
Key Words:
Common-Emitter Amplifier
Graphical Analysis
Small-Signal Models Analysis
Common-Collector Amplifier
Common-Base Amplifier

C-E Amplifiers
To operate as an amplifier, the BJT must be biased to operate in active
mode and then superimpose a small voltage signal vbe to the base.
DC + small signal
coupling capacitor
(only passes ac signals)
iC iB
vi
C2
vBE iB ic
RC
vCE
C1
vo
vi iB iB iC iC vO

C-E Amplifiers
+
Vi
Vi
Vi Vi

C-E Amplifiers
Apply a small signal

input voltage and see ib
i B I B ib
vBE=vi+VBE

C-E Amplifiers
See how ib translates into vce.
vi = 0 IBICVCE
vi 0 i B I B ib

iC I C iC
vCE VCE vce
iC=ic+IC VoM ViM f (o ) f (i )
vo out of phase with vi
vCE=vce+VCE

C-E Amplifiers Considering VC (all the capaertors are replaced
by open circuits)
Considering Vi (all the capaertors are replaced

by short circuits)

C-E Amplifiers
Considering VC (all the capaertors are replaced
by open circuits)
Considering Vi (all the capaertors are replaced

by short circuits)

Graphical Analysis
Can be useful to understand the operation of BJT
circuits.
First, establish DC conditions by finding IB (or VBE)
Second, figure out the DC operating point for IC
VCC
Can get a feel for whether the BJT will stay in active region of operation
What happens if RC is larger or smaller?

Graphical Analysis
vce ic ( RC // RL ) ic RL'
VCC ' VCEQ I CQ RL '
VCC

Graphical Analysis
Q-point is centered on the ac load line:
VCC

Graphical Analysis
Q-point closer to cutoff:
VCC
Clipped at cutoff
(cutoff distortion)

Graphical Analysis
Q-point closer to saturation:
VCC
Clipped at cutoff
(saturation distortion)

Graphical Analysis

Steps for using small-signal models

1. Determine the DC operating point of the BJT
in particular, the collector current
2. Calculate small-signal model parameters: rbe
3. Eliminate DC sources
replace voltage sources with shorts and current
sources with open circuits
4. Replace BJT with equivalent small-signal models
5. Analysis

Example 1
VC ( I B I C ) R I B R b VBE I E R e
VC VBE
IB
Rb (1 )( R Re )
IC IB,
IE = IC + IB = (1+)IB
VCE VC I C RC I E ( R Re )

Example 1

Example 2
Rb 2
VB VCC
Rb1 Rb 2
VB VBE
IC I E V B/ Re
Re
IC
vs IB

VCE VCC I C ( R C R e )

There are three basic configurations for single-stage
BJT amplifiers:
Common-Emitter
Common-Base
Common-Collector
c e
N P N
c N
N
e P
Rc P Re
b b N
b RC N
VBB
VBB VCC VBB VCC c
e VCC
(a) (c)
(b)
VE VB VC VE VB VC VE VB VC

VCC I B Rb VBE I E Re I B Rb VBE (1 ) I B Re
VCC VBE VCC

IB
Rb (1 ) Re Rb 1 Re
I C I B
VCC VCE I E Re VCE I C Re
VCE VCC I C Re
(a)
Note : Vo is slightly less than Vi due to the voltage drop introduced by VBE
AV 1

The last basic configuration is to tie the collector to a fixed voltage, drive
an input signal into the base and observe the output at the emitter.
(a)

Lets find Av Ai

Vo I e ( Re // RL ) I b (e1 )( Re // RL )

Vi I b [rbe (1 )( Re // RL )] I b rbe I e ( Re // RL )

(1 )( Re // RL )
VO ( Re // RL )
AV 1
Vi rbe (1 )( Re // RL ) rbe (1 )( Re // RL )

Lets find Av Ai
I o RL I e ( Re // RL ) (1 ) I b ( Re // RL )
(1 )( Re // RL )
Io Ib
RL
I b (rbe (1 )( Re // RL )) ( I i I b ) Rb
rbe (1 )( Re // RL ) Rb (1 )( Re // RL ) Rb
Ii Ib Ib
Rb Rb (1 )( Re // RL ) << Rb
(1 )( Re // RL ) Rb (1 )( Re // RL )
Ai
RL (1 )( Re // RL ) Rb RL
(1 )( Re // RL )
Ai >>1
RL

Lets find Ri
Ri
vi ib rbe ie ( Re // R L ) ib rbe (1 )( Re // RL )
vi
Ri rbe (1 )( Re // R L )
ib
Ri Ri // Rb [rbe (1 )( Re // RL )] // Rb Rb // ( Re // RL )

Lets find Ro
I Re I I e I I Re I e
I I Re Ie I Re 1 Ib
I
I Re
I I Re I b I b
v v
(1 )
Ro
Re rbe Rs // Rb
(b)
v 1
Ro
Ie i 1 1
I Re (rbe Rs // Rb ) (1 )
I Re (rbe Rs // Rb )
Re //
1

I
I Re

Ri Ro
(a) (b)
Ri [rbe (1 )( Re // RL )] // Rb
(rbe Rs // Rb )
Ro Re //
1


VO ( Re // RL )
AV
1
Vi rbe (1 )( Re // RL )
(1 )( Re // RL )
Ai >>1
RL
Ri [rbe (1 )( Re // RL )] // Rb
(rbe Rs // Rb )
Ro Re //
(a)
1
C-C amp characteristics:
Gain is less than unity, but close (to unity) since is large and rbe is small.
Also called an emitter follower since the emitter follows the input signal.
Input resistance is higher, output resistance is lower.
- Used for connecting a source with a large Rs to a load with low
resistance.

Ground the base and drive the input signal into the emitter
Rc
(a)
VB VBE I E R e VB
VCC VB VBE VB
R b2 IC I E
R b1 R b 2 Re Re
IC
VCE VCC I C RC I E Re VCC I C ( RC Re ) IB


Ri Ro
(a) R R
ic ( Rc // RL ) ( Rc // RL ) C C (R R ) I
I ( R R )
Av A i o r E 1
C L C L
ib rbe (1 )
rbe
Ii be r IC
be
// Re
rbe (1 )
R i= // Re
(1 )
For RL<<RC, Ai 1since I E I C
RoRC (1 )

Common-Base Amplifier I RC ( R R ) RC
A i o C L

I
i
(1 ) RC RL

For RL<<RC, Ai 1
(1 )
( Rc // RL )
Av
rbe
rbe rbe
R i= // R
(1 ) (1 )
e
RoRC
(a)
CB amp characteristics:
current gain has little dependence on
is non-inverting
most commonly used as a unity-gain current amplifier or current buffer and not
as a voltage amplifier: accepts an input signal current with low input resistance
and delivers a nearly equal current with high output impedance
most significant advantage is its excellent frequency response
Key Words:
Basic Concepts
High-Frequency BJT Model
Frequency Response of the CE Amplifier
Basic Concepts
1.0V
0.5V
0V
-0.5V
-1.0V
0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms
V(1) V(2)
Time
Basic Concepts
VO (t )
1.0V
0.5V
0V
-0.5V
-1.0V
0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms
V(1) V(2)
Time
Basic Concepts
800mV
600mV
400mV
200mV
0V
0Hz 2KHz 4KHz 6KHz 8KHz 10KHz 12KHz 14KHz 16KHz 18KHz 20KHz
V(2) V(1)
Frequency
1.0V
0.5V
0V
10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz
V(2)

Basic Concepts
A v Av ( f ) ( f ) or A Av ( ) ( )
Lower cut off frequency Upper cut off frequency

The drops of voltage gain (output/input) is mainly due to:
1Increasing reactance of Cs , Cc , Ce (at low f)
2Porasitic capacetine elements of the net work (at high f)
3Dissappearance of changing current(for trasformer coupled amp)
High-Frequency BJT Model
In BJTs, the PN junctions (EBJ and CBJ) also have capacitances associated
with them
C
rbe C
rbe C' C'


rbe C' C'
vs
There are three capacitors in the circuit.
At the mid frequency band, these are considered to be short circuits

and internal capacitors C',and C'are considered to be open circuits.

At low frequencies, C1, C2 are an

open circuit and the gain is zero.
Thus C1 has a high pass effect on the
gain, i.e. it affects the lower cutoff
frequency of the amplifier.
vs
1 C1 ( Rs Rb1 // Rb2 // rbe )
1
f L1
21
2 is the time constant for C2. 2 1 ---is neglected


1 C1 ( Rs Rb1 // Rb2 // rbe )
2 1 ---is neglected
Capacitor Ce is an open circuit. The
pole time constant is given by the
resistance multiplied by Ce.
vs
( Rb // Rs rbe )
e // Re Ce
1
1
f L 1.1 f
2
f L 2 f Le
2 2
f Le
L1
2e

At high frequencies, C1, C2 Ce are all

short circuit.
The frequency that dominates is the
lowest pole frequency.
vs
The time constant is neglected for C'
( RL 1 jC' )
C ( Rb // Rs // rbe )C
rbe C' C' 1
fH
2C
In summary:the lower cut off frequency is determined by network capacitence.
e.g.C1 C2 , Ce The higher cut off frequency is determined by the parasitic
ferquency of the BJT. e.g. C

rbe C' C'
f
j
fL
A v Avm
f f
vs (1 j )(1 j )
fL fH
f f
For f L f f H , , 0 Av Avm mid - frequency
fL fH
f

j
f fL
For f f L ( f f H ), 0, Av Avm low - frequency
fH f
1 j
fL
fL 1
For f f H ( f f L ) 0, Av Avm High frequency
f f
1 j
fH

rbe C' C'
vs
f
j
fL
A v Avm
f f
(1 j )(1 j )
fL fH
L 1 H 1
fL fH
2 2 L 2 2 H

decade
decade
0
Key Words:
Power Calculation
Class-A, B, AB Amplifiers
Complementary Symmetry(Push-Pull) Amplifier
Biasing the Push-Pull Amplifier (OCL)
Single-Supply Push-Pull Amplifier (OTL)
An Analog Electronics System Block
Sensor Voltage Power Load

Amplifiers Amplifiers
Energy Signal Energy

conversion Amplifiers conversion
Vom I om1
The output power delivered to the load RL: Po Vom I om
2 2 2
The average power delivered by the supply:

T T
1 1
PS VCC iC (t )dt VCC iC (t )dt VCC I C
T 0 T 0
The efficiency in converting supply power to useful output power is

defined as
P
OM 100%
PS

Power Calculation
The DC power by
the supply
PC VCEQ I CQ (VCC I CQ RC ) I CQ
PS I CQ
2
RC
The DC power delivered to BJT by the supply

Power Calculation
The average power dissipated as heat in the BJT:

1 T
PT
T 0
vCE iC dt
1 T
( I CQ I m cos t )(VCEQ Vm cos t )
T 0
1
I CQVCEQ I mVm PC PCL
2

Class-A Amplifiers
Class-B Amplifiers

Class-AB Amplifiers

Complementary Symmetry Power Amplifier (Class-B)

1 VCCVon V
2
sin 2
t
PT 1 0 sin tdt dt
on
2 RL 0 RL
1 VCCVon Von 2 2

2 RL 0
sin tdt
RL 0
sin tdt

1 VCCVon Von 2 1

2 RL 0
sin tdt
RL 2 0
1 cos 2tdt

1 VCCVon Von 2 1 VCCVon Von 2 1 VCCVon Von 2
cos t 0

2
2 RL 2RL 2 RL 2RL RL 4

2
I om Vom 1 Vom 2
1 VCC
PO POM
2 2 2 RL 2 RL
Assuming vo Vom sin t vCE VCC vo

vCE iC d t
0 CC O d t
1 1 vO
PT 1
2
0 2
V v
RL
1 VCCVOm VOm
2

RL 4
PT1 0 for VOm 0

VOm VCC
2
VCC 4
PT 1
RL 4
4 VCC
2
Note: PT represents the amount of
PT PT 1 PT 2
2 RL power dissipated by the BJT as heat

2
I om Vom 1 Vom 2
1 VCC
PO POM
2 2 2 RL 2 RL
VOm VCC V 2
4
PT 1 CC
RL 4
4 VCC2
PT PT 1 PT 2
2 RL
2
2VCC
PE PT PO
RL
2
1 VCC
P
O 2 RL 2 =78.5%
PE 2 VCC 4
Note that for class A: 25 ~ 50 RL
class B: 78.5
class AB: =25 ~ 78.5

Crossover
distortion

Biasing the Push-Pull Amplifier (Class-AB) (OCL)
To overcome crossover distortion, the biasing is adjusted to just overcome the
VBE of the transistors; this results in a modified form of operation called class
AB. In class AB operation, the push-pull stages are biased into slight
conduction, even when no input signal is present.
}VCC
}VCC
Power Calculation is the same as class-B


Single-Supply Push-Pull Amplifier (OTL)
The circuit operation is the same as that described previously, except the
bias is set to force the output emitter voltage to be VCC/2 instead of zero
volts used with two supplies. Because the output is not biased at zero
volts, capacitive coupling for the input and output is necessary to block
the bias voltage from the source and the load resistor.

13 Penguat Transistor

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Circuits and Analog Electronics

Ch6 Basic BJT Amplifiers Circuits

6.1 Bipolar junction transistors (BJTs)

References: Floyd-Ch-3, 5, 6; Gao-Ch7;

This lecture will spend some time on understanding

Emitter-base Base region

Emitter region Collector

6.1 Bipolar junction transistors (BJTs)

NPN BJT shown

Depending on the biasing across each of the junctions, different

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

Forward bias of EBJ injects electrons from emitter into base

6.1 Bipolar junction transistors (BJTs)

Most electrons shoot through the base into the collector

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

IEIENIEP IEN IC = ICN + ICBO

6.1 Bipolar junction transistors (BJTs)

IEIENIEP IEN IBIBNIEP IC=ICN+ICBO IE=IB+IC

6.1 Bipolar junction transistors (BJTs)

VCE Use a simple constant-VBE

6.1 Bipolar junction transistors (BJTs)

Make sure the BJT current equations and

Utilize the relationships ( and ) between

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

Saturation occurs when the

6.1 Bipolar junction transistors (BJTs)

When IB = 0, the transistor is in

In cutoff both the base-emitter

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

Discussion of an amplification effect

E.g. for common-base configuration transistor:

6.1 Bipolar junction transistors (BJTs)

6.1 Bipolar junction transistors (BJTs)

vBE vCE rbe ib vce

6.1 Bipolar junction transistors (BJTs)

BJT fundamentals: VBE 0.7V

6.2 Single-Stage BJT Amplifiers

6.2 Single-Stage BJT Amplifiers

6.2 Single-Stage BJT Amplifiers

Apply a small signal

6.2 Single-Stage BJT Amplifiers

See how ib translates into vce.

iC=ic+IC VoM ViM f (o ) f (i )

vo out of phase with vi

6.2 Single-Stage BJT Amplifiers

Considering Vi (all the capaertors are replaced

6.2 Single-Stage BJT Amplifiers

Considering Vi (all the capaertors are replaced

6.2 Single-Stage BJT Amplifiers

6.2 Single-Stage BJT Amplifiers

VCC ' VCEQ I CQ RL '

6.2 Single-Stage BJT Amplifiers

Q-point is centered on the ac load line:

6.2 Single-Stage BJT Amplifiers

Q-point closer to cutoff:

6.2 Single-Stage BJT Amplifiers

Q-point closer to saturation:

6.2 Single-Stage BJT Amplifiers