Microelectronics

Circuit Analysis and Design

Donald A. Neamen

Chapter 5

The Bipolar Junction Transistor

Neamen Microelectronics, 4e Chapter 5-1

McGraw-Hill
In this chapter, we will:

Discuss the physical structure and operation of

the bipolar junction transistor.
Understand the dc analysis and design
techniques of bipolar transistor circuits.
Examine three basic applications of bipolar
transistor circuits.
Investigate various dc biasing schemes of bipolar
transistor circuits, including integrated circuit
biasing.
Consider the dc biasing of multistage or multi-
transistor circuits.

Neamen Microelectronics, 4e Chapter 5-2

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 Cross Section of Integrated Circuit
npn Transistor

Neamen Microelectronics, 4e Chapter 5-3

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 Modes of Operation
Forward-Active
B-E junction is forward biased
B-C junction is reverse biased
Saturation
B-E and B-C junctions are forward biased
Cut-Off
B-E and B-C junctions are reverse biased
Inverse-Active (or Reverse-Active)
B-E junction is reverse biased
B-C junction is forward biased

Neamen Microelectronics, 4e Chapter 5-4

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 npn BJT in Forward-Active

Neamen Microelectronics, 4e Chapter 5-5

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 Electrons and Holes in npn BJT

Neamen Microelectronics, 4e Chapter 5-6

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 Electrons and Holes in pnp BJT

Neamen Microelectronics, 4e Chapter 5-7

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 Circuit Symbols and
Current Conventions

Neamen Microelectronics, 4e Chapter 5-8

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 Current Relationships

iE iC iB
iC iB
iE (1 iB )
iC iE


1
Neamen Microelectronics, 4e Chapter 5-9
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 Common-Emitter Configurations

Neamen Microelectronics, 4e Chapter 5-10

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 Common-Base Configuration

Neamen Microelectronics, 4e Chapter 5-11

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 Current-Voltage Characteristics of a
Common-Base Circuit

Neamen Microelectronics, 4e Chapter 5-12

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 Current-Voltage Characteristics of a
Common-Emitter Circuit

Neamen Microelectronics, 4e Chapter 5-13

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 Early Voltage/Finite Output
Resistance

Neamen Microelectronics, 4e Chapter 5-14

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 Effects of Leakage Currents
on I-V Characteristics

Neamen Microelectronics, 4e Chapter 5-15

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 Effect of Collector-Base Breakdown
on Common Base I-V Characteristics

Neamen Microelectronics, 4e Chapter 5-16

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 Effect of Collector-Base Breakdown on
Common Emitter I-V Characteristics

Neamen Microelectronics, 4e Chapter 5-17

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 DC Equivalent Circuit for
npn Common Emitter

Neamen Microelectronics, 4e Chapter 5-18

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 DC Equivalent Circuit for
pnp Common Emitter

Neamen Microelectronics, 4e Chapter 5-19

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 Load Line

Neamen Microelectronics, 4e Chapter 5-20

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 Problem-Solving Technique:
Bipolar DC Analysis
1. Assume that the transistor is biased in
forward active mode
a. VBE = VBE(on), IB > 0, & IC = IB
2. Analyze linear circuit.
3. Evaluate the resulting state of transistor.
a. If VCE > VCE(sat), assumption is correct
b. If IB < 0, transistor likely in cutoff
c. If VCE < 0, transistor likely in saturation
4. If initial assumption is incorrect, make new
assumption and return to Step 2.

Neamen Microelectronics, 4e Chapter 5-21

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 Voltage Transfer Characteristic for
npn Circuit

Neamen Microelectronics, 4e Chapter 5-22

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 Voltage Transfer Characteristic for
pnp Circuit

Neamen Microelectronics, 4e Chapter 5-23

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 Digital Logic

Inverter NOR gate

Neamen Microelectronics, 4e Chapter 5-24

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 Bipolar Inverter as Amplifier

Neamen Microelectronics, 4e Chapter 5-25

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 Effect of Improper Biasing on
Amplified Signal Waveform

Neamen Microelectronics, 4e Chapter 5-26

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 Single Base Resistor Biasing

Neamen Microelectronics, 4e Chapter 5-27

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 Common Emitter with Voltage
Divider Biasing and Emitter Resistor

VTH [ R2 /( R1 R2 )VCC

Neamen Microelectronics, 4e Chapter 5-28

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Integrated
Circuit
Biasing

I1
IC IQ
2
1

Neamen Microelectronics, 4e Chapter 5-29

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Multistage Cascade Transistor Circuit

Neamen Microelectronics, 4e Chapter 5-30

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Multistage Cascode
Transistor Circuit

Neamen Microelectronics, 4e Chapter 5-31

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