ANGELES UNIVERSITY FOUNDATION

College of Engineering

Electronic Devices and Circuits

Bipolar Junction Transistor (BJT)

Engr. Nilo Q. Manuntag

 Chapter Outline

Introduction
Transistor Construction
Transistor Operation
Common-Base Configuration
Common-Emitter Configuration
Common-Collector Configuration
 Introduction
1904 Vacuum tube diode was introduced by
J.A. Fleming
 Introduction
1906 Lee De Forest added the third element,
called the control grid, to the vacuum diode
resulting to the first amplifier, the triode.
 Introduction
1930s four-element tetrode and five-element
pentode
 Introduction
1930s four-element tetrode and five-element
pentode
 Introduction
1 milliion tubes in 1922 to 100 million in 1937
 Introduction
December 23, 1947 invention of the first
transistor by Walter H. Brattain, John Bardeen
and William Shockley at Bell Telephone Labs.
1956 they received Nobel Prize for their
contribution
 Introduction
Point-contact transistor the original
transistor
 Introduction
Modern transistors
 Introduction
Advantages of the Transistor:
It was smaller and lightweight.
It had no heater requirement or heater loss.
It had a rugged construction.
It was more efficient since less power was
absorbed by the device itself.
It was instantly available for use, requiring no
warm-up period.
Lower operating voltages were possible.
 Transistor Construction

NPN transistor PNP transistor

 Transistor Construction
Emitter heavily doped layer.
Base lightly doped layer.
Collector lightly doped.
Commonly called Bipolar Junction Transistor
(BJT)
Bipolar holes and electrons participate in the
injection process into the opposite polarized
material
Unipolar only one carrier is employed
(electron or hole).
 Transistor Operation
NPN transistor PNP transistor

One p-n junction of a transistor is reversed-

biased, whereas the other is forward-biased.
 Transistor Operation

Forward-biased junction Reversed-biased junction

of PNP transistor of PNP transistor
 Transistor Operation

Majority and minority carrier flow of a pnp transistor.

 Common-Base Configuration

PNP transistor NPN transistor

schematic symbol schematic symbol
 Common-Base Configuration

Output or collector characteristics for a common-base

transistor amplifier.
 Common-Base Configuration
Active region the base-emitter junction is forward-
biased, whereas collector-base junction is reversed-
biased.

Cutoff region the base-emitter and collector-base

junctions are both reversed-biased.

Ic = 0
Saturation region the base-emitter and collector-base
junctions are forward-biased.
 Common-Base Configuration
Alpha ()

ac alpha common-base, short-circuit, amplification

factor