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VI Characteristics of a Diode
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Difference between Diode and Power Diode
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Difference between Diode and Power Diode
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Depletion Region
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Depletion Region
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Effect of Doping on width of depletion region
• The atom which loses an electron is called positive ion and the atom which
gains an extra electron is called negative ion. Positive ions are ready to
accept an electron and negative ions are ready to accept a hole.
• Doping means adding impurities to the semiconductor to improve its
electrical conductivity. When we add large amount of impurities to the
semiconductor, it will produces large number of free electrons in the n-type
semiconductor and large number of holes in the p-type semiconductor.
• The large number of free electrons in the n-type semiconductor repels from
each other and try to move towards p-side. However, before entering into p-
side, the free electrons meet positive ions at the depletion region. We know
that positive ions are ready to accept extra electrons. When the positive ions
accept the extra electrons, they become neutral atoms. In this manner large
number of free electrons fills the holes in positive ions and makes them
neutral.
• In the similar way, holes moving from p-side to n-side meets the negative
ions and makes them neutral atoms. In this manner, free electrons and holes
reduce the ions. Reduction of positive ions means reduction of depletion
region. Thus, the depletion region decreases.
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Effect of Doping on width of depletion region
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Effect of Doping on width of depletion region
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Structure of Power Diode
• The structure of the power diode is little different from the small
signal diodes
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Structure of Power Diode
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Structure of Power Diode
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Structure of Power Diode
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Switching Characteristics of Power Diode
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Switching Characteristics of Power Diode
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Switching Characteristics of Power Diode
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Switching Characteristics of Power Diode
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Switching Characteristics of Power Diode
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Reverse Recovery Characteristics
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Reverse Recovery Characteristics
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Reverse Recovery Characteristics
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Reverse Recovery Time trr
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Forward Recovery Time
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Derivation for reverse recovery charge Qrr
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Derivation for reverse recovery charge
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Derivation for Maximum Reverse Recovery Current
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Conclusion from derived expressions
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Soft Recovery and Abrupt Recovery
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Softness Factor and Reverse Recovery Time
• In the case of fast recovery diode, the time taken by the current to decay (tb)
will be smaller in comparison to the time taken by the current to reach its
negative peak (ta). On the other hand, for a soft recovery diode, the situation
will be the reverse. That is, here, tb will be larger in comparison to ta.
• It is also seen that the softness factor gives a measure
of semiconductor losses incurred during switching. Greater is this ratio,
greater will be the switching loss. From this, one can conclude that when
soft-recovery diodes are used, the losses experienced by the
semiconductor switching are more than those encountered when fast
recovery diodes are used.
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Softness Factor and Reverse Recovery Time
• Greater is the reverse recovery time, slower will be the diode and
vice-versa. Thus the diodes with lesser reverse recovery time are
preferred, especially when the requirement is of high switching
speed.
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Video On Reverse Recovery Characteristics
• https://www.youtube.com/watch?v=DXWskHsBxT0
• A video of 10 minutes discussing reverse recovery time concept.
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Reverse Recovery Characteristics
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Numerical on Reverse Recovery Characteristics
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Numerical on Reverse Recovery Characteristics
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Numerical on Reverse Recovery Characteristics
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Important Notes
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Types of Power Diode
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General Purpose Diode
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Schottky Diode
https://www.youtube.com/watch?v=bXEyCf1P0UU
https://www.youtube.com/watch?v=ge7yjx0SCyU
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Schottky Diode
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Schottky Diode
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Schottky Diode
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Schottky Diode
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Schottky Diode
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Fast Recovery Diodes
• As their name suggests, these are the type of power diodes which
have a relatively faster reverse recovery time, which usually varies
from 2 micro seconds to 5 micro seconds. With such a fast recovery
time, they can be easily used in high speed switching applications
where the time is of great importance.
• Due to their property of fast reverse recovery, they are also
comparatively expensive as compared to the general purpose diodes.
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Silicon Carbide SiC Schottky Barrier Diode (SBD)
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Silicon Carbide SiC Schottky Barrier Diode (SBD)
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Comparison
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