Seneca College: Fiber Optics Communications

SENECA COLLEGE
School of Electronics &Computer Engineering
Fiber Optics Communications

CHAPTER-3
OPTICAL SOURCES
By Harold Kolimbiris
CHAPTER-3
TABLE OF CONTENTS
 INTRODUCTION
 LIGHT EMITTING DOIDES (LEDs)
 LASER DIODES
 QUANTUM WELL LASER DIODES
 MULTI-QUANTUM WELL LASER DIODES (MQW)
 SURFACE EMITTING LASERS
 VERTICAL CUVITYSURFACE EMITTING LASERS (VCSEL)
 VCSEL diodes composed of GaAlAs-GaAs
 VCSEL diodes composed of GaInAs-GaAs
2
INTRODUCTION
 The primary optical source of a fiber optics transmission system is the

semiconductor Light-Emitting-Diode (LED).
 The selection of this device as the primary optical source was based on its
ability to provide optical power ranging from 0.05mW to 2mW over optical
fibers several km in length
 Today, there exist two basic types of semiconductor optical sources. The
LEDs we have just briefly described and laser-diodes.
 Laser diodes are used for long distance high data rate transmissions; while
LED devices are used for shorter distance, lower data rate transmission.
INTRODUCTION cont.
 The progressive evolution of LED technology led to the development of

two types of LED devices; those of the Edge-Emitting LEDs (ELEDs),
and those of the Surface-Emitting LEDs (SLEDs).
 Edge-Emitting LEDs are used for both single-mode and multi-mode

operations with bit rates in excess of 400Mb/s.
 Since the 1990s laser diode technology has dramatically improved device
performance characteristics through the introduction of Vertical-Cavity-
Surface-Emitting (VCSEL) and Quantum-Well (QW) lasers.
 Surface-Emitting LEDs are better suited to multi-mode medium range

optical fiber transmission.
INTRODUCTION cont.
 The fundamental theory for the design and construction of LED and
LASER optical sources is based on electron-hole recombination within a
semiconductor material.
 This electron-hole recombination results in the generation of photons with

frequencies determined by the physical parameters of the semiconductor
material.
 Emission can also be divided into two basic categories; stimulation-

emissions, and spontaneous-emissions
INTRODUCTION cont.
 Both stimulation-emission and e e

E2 E2
spontaneous-emission can be E  h. f E  h. f
better explained with the e

E1
e
E1
assistance of the following (a) (b)
oversimplified atomic-model fig-1

and fig-2. Spontaneous Fig-1
Conduction band
Incident
Photon
Band gap
Valance band
Stimulated Fig-2

CHAPTER-3:
OPTICAL SOURCES
LIGHT EMITTING DOIDES (LEDs) (1)
 Perhaps the best representative of the optical source device family is that
of the Light-Emitting-Diode (LED).
 LEDs are classified as electro luminescent devices composed of

semiconductor materials capable of generating light when forward biased
by a current source.
 The basic semiconductor materials composing LED structures are GaAsP,

GaAlAs, GaAs, and GaP. Gallium-Arsenide-Phosphate (GaAsP)
 LEDs generate light between 640nm – to – 700nm with a peak optical

power at 660nm.
CHAPTER-3:
OPTICAL SOURCES
LIGHT EMITTING DIODES (LEDs) (2)
 The selection of semiconductor materials described above and their

proportional contribution to the optical device fabrication is indicative of
the wavelengths required.
 The optical energy obtained from the above semiconductor material

combination is measured in electron volt (eV) as follows:
 Ge = 0.7eV GaP = 2.2eV

 Si = 1.1eV GaAs = 1.4 eV
 Cds = 2.4eV GaAlP = 0.8 – 2.0eV
CHAPTER-3:
OPTICAL SOURCES
 The centre wavelength () of an LED device is determined by the bandgap

energy () in eV at the active layer given by
hc
c 
Eg
 Where:
 h= Planck’s constant (6.63 x 10-34 J.s)
 c = Velocity of light in vacuum ( 3 x 108 m/s)
 Eg = Bandgap (eV)
CHAPTER-3:
OPTICAL SOURCES
 Edge-Emitting LEDs
 Edge-Emitting LEDs were first introduced in the mid-seventies. The basic
structure of this device closely resembles the laser diode, with one
fundamental difference.
 For laser diodes, positive feedback is promoted in order to

enhance stimulated emission, while with edge-emitting LEDs,
the feedback mechanism is suppressed for the exact opposite
reason; that is, to prevent the device from going to a saturated
emission mode of operation.
CHAPTER-3:
OPTICAL SOURCES
 The basic device structure is shown in Fig-3
Conductive
Dieleleric
p+
GaAs
p-AlGaAs
n-AlGaAs
n-GaAs
Substrate n-GaAs
Conductive
Edge emitting LED device structure

CHAPTER-3:
OPTICAL SOURCES
 A typical voltage/current characteristic curve of an edge-emitting LED is

shown in fig-4
200
150
Current (mA)
100
50
0 1 2 3 4 5
Forward Voltage (V)
Voltage/Current characteristics curve Fig-4

CHAPTER-3:
OPTICAL SOURCES
 LED Characteristics
 One of the most important characteristics of an LED source is that of
power efficiency.
 This power efficiency is subdivided into two categories; internal power

efficiency also called quantum efficiency (g), and external power
efficiency ( )
c
 Internal power efficiency is defined as the ratio of photons generated to the

number of electrons induced into the active layer of the device
CHAPTER-3:
OPTICAL SOURCES
 Quantum efficiency is expressed as follows:
N ph
g 
N e
 Where:
 g = Quantum efficiency (%)
 Nph = Number of photons
 N = Number of electrons
e
CHAPTER-3:
OPTICAL SOURCES
 External power efficiency () is defined as the ratio of the optical power coupled
c
into the fiber, to the electrical power applied by the optical device and is expressed
by,
PF
c %   100
PIn
 Where:
 c = External power efficiency
 PF = Optical fiber power
 PIn = Input power
CHAPTER-3:
OPTICAL SOURCES
 Optical fiber power P() is only a fraction of the power generated internally
F
to the optical device. This optical power loss is relevant to the device-
optical fiber coupling efficiency expressed by,
 c  (NA) 2
 Where:
(NA) = Numerical aperture of the optical fiber
CHAPTER-3:
OPTICAL SOURCES
 LED Spectral-Bandwidth at Half-

Power-Point ()
100
 The LED spectral-bandwidth

determined at half-power-point
(50%) of the spectral density in
reference to wavelength is illustrated
50
in fig-5
0
850 900 1000 1100 1200
LED Spectral bandwidth curve. Fig-5

CHAPTER-3:
OPTICAL SOURCES
 LED optical devices exhibit a spectral bandwidth of between 20nm-200nm

at half-power-point.
 This spectral bandwidth is translated to the pulse broadening as it travels

through the optical fiber per km of fiber length.
 LEDs emitting at peak wavelength of 800nm exhibit a pulse broadening of

5ns/km. this disadvantage of the LED device can be controlled by shifting
the peak wavelength from 800nm to 1300nm. At this wavelength, a
smaller dispersion is encountered.
CHAPTER-3:
OPTICAL SOURCES
 LED bandwidth
 Light Emitting Diodes are intensity-modulated devices. That is, the input
current can directly affect the output intensity of the device.
 In digital transmission, the LED device is turned ON and OFF in

accordance with the input binary data.
 Ideally, turning ON and OFF the device must occur simultaneously with
the input binary data.
 In reality there is a time delay between the bias current changes and the
turning ON and OFF of the LED. This delay is caused by the rise time (tr)
and fall time (tf) of the LED source
CHAPTER-3:
OPTICAL SOURCES
 This total time delay is the result of such factors as carrier recombination,
time and space change capacitance inherent to the LED device physical
dimensions, and semiconductor properties.
 The relationship establishing total optical bandwidth at half power point is

given by,
1
BW 
2r
 Where:
 BW 
Bandwidth
 r=Carrier life time or carrier recombination
CHAPTER-3:
OPTICAL SOURCES
 A more practical formula establishing optical bandwidth is given by,
0.35
BW 
tr
 Where:
tr = Rise time.
CHAPTER-3:
OPTICAL SOURCES
 Surface-Emitting (SLEDs)
 The design of a surface emitting LED was based on a massive electron
injection into a thin optically transparent layer of p-material.
 This thin layer, confined between two other layers with larger bandgap,
secures the confinement of the injected carriers, thus promoting a higher
degree of recombination and ultimately a larger number of photon
generations.
 In contrast to edge-emitting LEDs, the optical radiation of the surface LED

takes place from the surface of the active layer
CHAPTER-3:
OPTICAL SOURCES
 This SLED optical source is designed to generate optical power in the

1.3m range. It uses an InP substrate because InP is transparent to this
wavelength.
 Coupling of SLED into Optical Fiber

 One of the major problems facing optical fiber communications systems is
that of the coupling of optical power generated by the optical source into
the optical fiber.
 The ratio of the optical power coupled into the fiber to that of the power
generated by the optical source is called the coupling efficiency and is
given by
PF
c 
PS
CHAPTER-3:
OPTICAL SOURCES
 Where:
c = Coupling efficiency
PF = Optical power coupled into the fiber
PS= Optical power generated by the source
 This inability of transferring all the generated optical power of the source into the
fiber is caused by the different physical characteristics of the source and the fiber
 In order to maximize the coupling efficiency between optical source and

the optical fiber, two methods have been implemented; the first is the Butt
method and the second is the lens method.
CHAPTER-3:
OPTICAL SOURCES
 The Butt Method

 The simplest method of coupling optical power generated by the SLED
device into the fiber is the Butt direct coupling method.
 The fundamental requirement for an efficient Butt-coupling is that the

core-cross-section area of the fiber must be at least equal to the optical
emission area of the optical source.
 If the source area is larger than the core area, only a fraction of the
generated optical power will be coupled into the cladding of the fiber
resulting in a quick attenuation of that optical power.
CHAPTER-3:
OPTICAL SOURCES
 This attenuation of the power coupled into the cladding section of the
optical fiber can be considered as optical power loss. Fig-6
Cladding
Optical Area
Core
The Butt method. Fig-6
 The coupling efficiency obtained by the Butt-method for a uniformly

exited guiding source (lambertian) such as the SLED devices varies with
step-index and graded-index fibers
CHAPTER-3:
OPTICAL SOURCES
 The Lens Method

 In order to improve the coupling efficiency of optical power into the fiber, a lens is
inserted between the radiating area of the source and the fiber core cross-section
area.
 The objective of such an insertion is to equalize the optical area of the source to
that of the fiber core cross-section area.
 The objective of such an insertion is to equalize the optical area of the

source to that of the fiber core cross-section area. This lens scheme allows
for a maximum coupling efficiency when the ratio of the radius of the
power optical sources and the radius of the fiber core (x/y) become equal
to the magnification factor of the inserted lens. Fig-
CHAPTER-3:
OPTICAL SOURCES
 The lens coupling method fig-7
1
2
Cladding
Lens
Source
Core
The Lens method. Fig-7
 The lens physical properties and the precise location between the source
and the core achieve an equalization of these two solid angles Q1 equal to
Q2 resulting in an optimum coupling efficiency.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (1)
 Laser is the abbreviation of “Light Amplification by Stimulated Emission

of Radiation”.
 Laser devices were first introduced in 1961 and their operations were
based on stimulated emission instead of spontaneous emission radiation
 Stimulated emission of radiation is the process whereby photons are used

to generate other photons having the exact phase and wavelength with the
parent photons. Fig-8
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (3)
 The Fabry-Perot Laser

 Laser diodes are semiconductor devices capable of generating highly directional
optical beam of a particular wavelength.
 Another important characteristic of laser diodes is the fact that they can be
modulated by very high rates perhaps as high as 10GHz.
 Laser diodes suffer from three inherited but very fundamental problems when
employed as source devices in optical communications systems. These problems
are.
 Laser diode temperature sensitivity

 Back reflections
 Susceptibility to optical interference.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (2)
 Stimulated emission of radiation model fig-8
Conduction band
Incident
Photon
Band gap
Valance band
Stimulation emission. Fig-8

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (4)
 The Fabry-Perot structure is a simpler laser diode in comparison to LEDs,

capable of producing optical beams with substantially wider spectral
bandwidths.
 The only drawback of this structure is the fact that it exhibits a higher
degree of chromatic absorption.
 A Fabry-Perot laser structure initiates optical power generation of a

specific wavelength while at the same time amplifies this optical power to
a level determined by the semiconductor materials used in the fabrication
of the device and its physical characteristics.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (5)
 To achieve optical amplification, the Fabry-Perot device employs

reflective mirrors on both sides of the photon traveling path. Fig-9
L = Reflective path
- +
E
Simplified Fabry-Perot semiconductor structure. Fig-9

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (6)
 These mirrors reflect the photons through the bandgap, thus allowing for
additional electron-hole recombination and consequently larger photon
generation. The optical spectrum of a Fabry-Perot resonator is illustrated
in fig -10.
/2
Relative optical output intensity
Wavelength ()
Fabry-Perot structure optical spectrum Fig-10

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (7)
 The number of wavelength that can be generated by a Fabry-Perot laser

diode is given by.
m.c
f res 
2.l.n
 Where:
c=Velocity of light 3 10 8 m / s
m=Integer
l=Length between mirrors
n=Cavity refractive index
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (8)
 Fabry Perot AlGaAs/GaAs laser diode. Fig-11

Metalic conduct
SiO 2
GaAs
AlGaAs
GaAs
P+ AlGaAs (Active layer)
P
GaAs
n-
Metalic conduct
n
n+
Fabry Perot AlGaAs/GaAs laser diode. Fig-11

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (9)
 For stimulation emission to occur, the number of electrons in the

conducting band must exceed the number of electrons in the valence band.
 This increase can be accomplished through the process of “pumping”.
 Pumping, or the elevation of electron from the valence band to the

conducting band, is achieved by passing a sufficient amount of current
through the active region of the laser device.
 Stimulated emission of radiation will start to take place at a minimum

current level, induced to the active region of the laser structure called the
“threshold current”.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (10)
 The relationship between threshold current and optical power output of a

laser device is illustrated in fig-12.
Laser Optical Power (mW)
Threshold
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

Current (mA)
Laser optical power output-v- biasing current. Fig-12

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (11)
 The Fabry-Perot double Heterostructure laser is a gain-guided multi-mode

device. The spectral density of such a device is shown in fig-13.
Optical power intensity (dB)
o
 (nm)
Fabry-Perot laser spectral density. Fig-13

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (11)
 Distributed-Feedback Laser Structures (DFB)

 Careful examination of the spectral display of a Fabry-Perot laser diode reveals
that such spectral display is composed of a central (highest amplitude) modal
component and also several modal components of progressively lower amplitudes.
 This is a definite disadvantage when this type of diode is used in optical

communications systems because its wide spectral width significantly increases
chromatic absorption with a consequent reduction of the usable transmission
bandwidth.
 In a DFB device structure, the main design objective is to generate a single

line spectral at the output under high data rates of modulation.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (12)
 Distributed feedback laser structure. Fig-14
n-type
n-type
n-type
Grating Active layer
Distributed feedback laser structure. Fig-14

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (13)
 This objective is achieved by incorporating a corrugated layer below the

active layer of the DFB device.
 These hills and valleys generate a constant change of the refractive index,
which contributes to the device's feedback mechanism so that a single
mode is produced and undesirable modes are suppressed.
 In order for the structure to operate as a DFB device, the grading period
must satisfy the relationship. Where, g = Grating period,  mode is the
P
operating wavelength and n is the refractive-index of the effective mode
mod e
gP 
n
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (13)
 Laser Diode Characteristics

 There exists two types of lasers: i) gain-guided a index-guided.
 Gain-guided lasers are multi-mode, while the index-guided lasers are

single-mode devices.
 This is attributed to the fact that the spontaneous emission component

within the index-guided structures is smaller than that of the gain-guided
structure.
 Maintaining a narrow modal line width is crucial when laser devices are
used as optical sources for long-distance communications systems.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (14)
 Laser Bandwidth
 One of the fundamental advantages of optical fiber communications
systems is its ability to directly modulate the optical source at a very high
data rate.
 Although these modulating rates are very high (approx. 20GHz), there
limits beyond which the laser diode cannot respond.
 Fig-14 shows the output frequency response of a typical laser diode under
modulating conditions.
CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (15)
 Fig-15
10
Spectral output density (a.u)
5
0 1
2
Under different
-5
3 mirror reflectivity
-10 4
0 1 10 100
Modulation frequency (MHz)
Output spectral density-v-modulation frequency. Fig-15

CHAPTER-3:
OPTICAL SOURCES
LASER DIODES (16)
 Fig-15 illustrates that under relatively low modulating frequencies, the

spectral output intensity is constant.
 When modulating frequency reaches a certain level, the carriers injected

into the device cavity interact with the generated photons, enhancing a
self-oscillatory process and thus sharply reducing the output spectral
density.
 Another serious problem is that of noise intensity.

CHAPTER-3:
OPTICAL SOURCES
QUANTUM WELL LASER DIODES (1)

 QUANTUM WELL LASER DIODES (QW)
 The basic objective in the design of laser diodes is to obtain the highest optical
gains at the lowest possible carrier densities, ultimately reflecting much lower
threshold current requirements.
 Conventional double heterojunction laser diodes are unable to fully satisfy the
above highly desirable performance characteristics, because of the relatively thick
active layer.
 If the active layer is divided in sub-layers with widths of the order of few
nanometres while separated by equally thin barrier layers the carrier movement
across the individual thin active layers will be somewhat restricted and the
kinetic energy will appear to be quantized to discrete energy levels.
CHAPTER-3:
OPTICAL SOURCES
 Because of the transformation

of the forward kinetic energy to
quantum energy levels in the
active region, these devices are
Intensity in arbitrary units

referred to as quantum-well
(QW) laser diodes.
 The energy bands of such a

structure are illustrated in fig-
16. Wavelength (nm)
QW-Energy band levels.Fig-16

CHAPTER-3:
OPTICAL SOURCES
 The discrete energy states within the active region alter the optical and
electronic properties of the beam promoting higher optical gains at much
lower threshold currents, in comparison to double heterojunction laser
diodes.
CHAPTER-3:
OPTICAL SOURCES
MULTI-QUANTUM WELL LASER DIODES (MQW-1)
 Multi-Quantum-Well laser diodes

 To further enhance the laser diode operating performance, the quantum-
well concept was extended beyond the single quantum well (SQW)
concept, to a new semiconductor structure incorporating more than one
quantum wells, thus referred to as multi-quantum-well laser diodes
(MQW).
 MQW laser structures employ multilevel active region separated by

barrier layers. In such a device the barrier energy level and the cladding
energy level are equal.
CHAPTER-3:
OPTICAL SOURCES

A
 Energy bands of a MQW

diode. Fig-17
 Multi-quantum-well Wavelength (nm)
B
technology is today applied

in the fabrication of both
LED and laser diode devices
operating at very short Wavelength (nm)
wavelengths, down to 410nm C

range.
MQW-Energy band levels.Fig-17 Wavelength (nm)

CHAPTER-3:
OPTICAL SOURCES
 A different energy level between the barrier and the cladding layers results
to a modified version of the MQW structure referred to as modified multi-
quantum-well laser diodes (M-MQW) with no significant changes in their
performance characteristics.
 The energy bands of a MQW diode for different biasing current levels, is
illustrated in fig-17
CHAPTER-3:
OPTICAL SOURCES
SURFACE EMITTING LASERS

 SURFACE EMITTING LASERS (SEL)
 The ever increasing demand for higher transmission capacities and

longer distances between amplification, optical interconnections and
optical computing generated the incentive for the development of
innovative laser devices such as the surface emitting lasers (SEL).
 Surface emitting laser diodes are classified into four major categories.
 Vertical-Cavity-Surface-Emitting-Lasers (VCSELs)
 Folded-Cavity (FCSEL)
 -Reflecting-Mirror (-RMSEL)
 Grating-Coupled (GCSEL
CHAPTER-3:
OPTICAL SOURCES
SURFACE EMITTING LASERS (2)
 The fundamental advantages of surface emitting laser diodes relies on the

fact they can be massively fabricated by monolithic processing, ability to
vertically harvest the generated optical power and the ability to be tested
and their performance evaluated before separated to individual devices.
 The fact that they can be fabricated in large number of arrays, leads to the
generation of relatively high optical laser power.
CHAPTER-3:
OPTICAL SOURCES
SURFACE EMITTING LASERS (3)
 An array of surface emitting 1 2 3
lasers is illustrated in fig-18
D1 D2 D3
Wavelength Wavelength Wavelength
D1=200m D2=100m D3=65m

 1=0.9984m  2=1.008m  3=1.0139m
An array of surface emitting lasers. Fig-18

CHAPTER-3:
OPTICAL SOURCES
VERTICAL CUVITYSURFACE EMITTING LASERS (VCSEL-1)
 VERTICAL CAVITY SURFACE EMITTING LASERS
 The fundamental difficulty with standard SEL diodes lies in their inability to
operate at room temperature, because of their short gain path relevant to
insufficient mirror reflectivity.
 To improve the p-side mirror reflectivity a ring electrode was introduced, while at
the n-side, a multilayer reflector was introduced to improve mirror reflectivity.
 However, in order to improve the second important performance

parameter, the substantial reduction of the threshold current a thin circular
heterostructure active layer was induced in the optical confinement
waveguide.
CHAPTER-3:
OPTICAL SOURCES
VERTICAL CUVITY SURFACE EMITTING LASERS (VCSEL-2)
 A three dimensional visualization of a VCSEL diode is illustrated in fig-19.

Optical
power output
Electrode (+)
Distrib uted Bragg

Reflector (DBR)
Optical confinement
Active region
Substrate
D
Electrode (-)
A three dimensional representation of a VCSEL diode. Fig-19

CHAPTER-3:
OPTICAL SOURCES
VERTICAL CUVITYSURFACE EMITTING LASERS (VCSEL-3)
 VCSEL threshold current. I th )
The VCSEL threshold current is expressed as follows:
eVBeff N th
ni I th 
ni n spont.
Where,
ni
=Injection efficiency
B eff
=Coefficient of effective radiative recombination
n spont =Efficiency of spontaneous emission
CHAPTER-3:
OPTICAL SOURCES
VCSEL diodes composed of GaAlAs-GaAs
 Operational characteristics
 Operating temperature: (Room)
 Threshold current: ( I ) 20mA
th
 Threshold current density: J )260A / m

th
2
 Differential quantum efficiency: 10%

 CW-optical power output: 2mW(max)
 Spectral linewidth:1A (above threshold)
0
 Modal spacing: 170 A0
 Single mode suppression ratio: 35dB(at I th

 1.25)
J th
CHAPTER-3:
OPTICAL SOURCES
VCSEL diodes composed of GaInAs-GaAs

 In the quest for higher laser gain
VCSEL diodes employing 8 R.T.CW
Ith=70  A
GaInAs/GaAs compounds are

fabricated. 6
Light output (W)

4
 The above diode is composed of
a three Quantum-Well (QW)
2
GaInAs active layer and twenty-
four stacks of GaAs/AlAs Bragg
0
reflector layers. The current-v- 0 100 200 300 400 500
Current (A)
optical output power graph of
such a device is illustrated in fig-
20. L-v-I of the above VCSEL diode. Fig-20
CHAPTER-3:
OPTICAL SOURCES
VCSEL diodes composed of GaInAs-GaAs

 From fig-20 it is evident that lasing action takes place at an approximate
threshold current of 80mA at room temperature with carrier wave
operation. Subsequent research has shown that optical power of the order
of 50mW to 200mW with efficiencies up to 50% can be achieved.

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SENECA COLLEGE

School of Electronics &Computer Engineering

Fiber Optics Communications

 The primary optical source of a fiber optics transmission system is the

 The progressive evolution of LED technology led to the development of

 Edge-Emitting LEDs are used for both single-mode and multi-mode

 Surface-Emitting LEDs are better suited to multi-mode medium range

 This electron-hole recombination results in the generation of photons with

 Emission can also be divided into two basic categories; stimulation-

 Both stimulation-emission and e e

better explained with the e

assistance of the following (a) (b)

oversimplified atomic-model fig-1

LIGHT EMITTING DOIDES (LEDs) (1)

 LEDs are classified as electro luminescent devices composed of

 The basic semiconductor materials composing LED structures are GaAsP,

 LEDs generate light between 640nm – to – 700nm with a peak optical

LIGHT EMITTING DIODES (LEDs) (2)

 The selection of semiconductor materials described above and their

 The optical energy obtained from the above semiconductor material

 Ge = 0.7eV GaP = 2.2eV

LIGHT EMITTING DIODES (LEDs) (3)

 The centre wavelength () of an LED device is determined by the bandgap

LIGHT EMITTING DIODES (LEDs) (4)

 For laser diodes, positive feedback is promoted in order to

LIGHT EMITTING DIODES (LEDs) (5)

 The basic device structure is shown in Fig-3

Edge emitting LED device structure

LIGHT EMITTING DIODES (LEDs) (6)

 A typical voltage/current characteristic curve of an edge-emitting LED is

Voltage/Current characteristics curve Fig-4

LIGHT EMITTING DIODES (LEDs) (7)

 This power efficiency is subdivided into two categories; internal power

 Internal power efficiency is defined as the ratio of photons generated to the

LIGHT EMITTING DIODES (LEDs) (8)

 Quantum efficiency is expressed as follows:

LIGHT EMITTING DIODES (LEDs) (9)

LIGHT EMITTING DIODES (LEDs) (10)

LIGHT EMITTING DIODES (LEDs) (11)

 LED Spectral-Bandwidth at Half-

 The LED spectral-bandwidth

LED Spectral bandwidth curve. Fig-5

LIGHT EMITTING DIODES (LEDs) (12)

 LED optical devices exhibit a spectral bandwidth of between 20nm-200nm

 This spectral bandwidth is translated to the pulse broadening as it travels

 LEDs emitting at peak wavelength of 800nm exhibit a pulse broadening of

LIGHT EMITTING DIODES (LEDs) (13)

 In digital transmission, the LED device is turned ON and OFF in

LIGHT EMITTING DIODES (LEDs) (14)

 The relationship establishing total optical bandwidth at half power point is

LIGHT EMITTING DIODES (LEDs) (15)

 A more practical formula establishing optical bandwidth is given by,

LIGHT EMITTING DIODES (LEDs) (16)

 In contrast to edge-emitting LEDs, the optical radiation of the surface LED

LIGHT EMITTING DIODES (LEDs) (17)

 This SLED optical source is designed to generate optical power in the

 Coupling of SLED into Optical Fiber

LIGHT EMITTING DIODES (LEDs) (18)

 In order to maximize the coupling efficiency between optical source and

LIGHT EMITTING DIODES (LEDs) (19)

 The Butt Method

 The fundamental requirement for an efficient Butt-coupling is that the