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device
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D.Gajski, Silicon Compilation, Addison Wesley, 1988
Introduction to VLSI Design Introduction © Steven P. Levitan 1998
N-Channel Enhancement
mode MOS FET
– Four Terminal Device - substrate bias
Gate Oxyde
Gate
Polysilicon Field-Oxyde
Source Drain
(SiO2)
n+ n+
p+ stopper
p-substrate
Bulk Contact
G G
S S
G G B
S S
P Switch
D
0
G 1 Passes “good ones”
S
X Y Y = X if A and B
X B Y = X if A OR B
Y
A B
X Y Y = X if A AND B = A + B
X B Y = X if A OR B = AB
Y
N Switch
0
S 1
G
S’ 0
1
P Switch
Open Circuit, High Z
Bi-directional Switch
P-channel N-channel 0
0 1
1
1/0 0/1
A B C D E
Feedback loop
In1
In2 PUN PMOS Only
In3
F=G
In1
In2 PDN NMOS Only
In3
VSS