CHAPTER 7

Basic FET Amplifiers

FET Modeling

𝑖𝐷 = 𝑓 𝑣𝐺𝑆 , 𝑣𝐷𝑆

𝜕𝑖 𝜕𝑖
Or, 𝑖𝐷 = 𝜕𝑣 𝐷 𝑣𝐺𝑆 ቚ + 𝜕𝑣 𝐷 𝑣𝐷𝑆 ቚ
𝐺𝑆 𝑣𝐷𝑆 = Con. 𝐷𝑆 𝑣𝐺𝑆 = Con.

1
Or, 𝑖𝐷 = 𝑔𝑚 𝑣𝐺𝑆 + 𝑟 𝑣𝐷𝑆 NMOSFET as a 2 ports device
0

𝜕𝑖
Where, 𝑔𝑚 = 𝜕𝑣 𝐷 ቚ
𝐺𝑆 𝑣𝐷𝑆 = Con.

It is called the forward transconductance or simply transconductance of the FET.

Similarly, output /drain resistance

𝜕𝑣𝐷𝑆
𝑟0 = ቚ
𝜕𝑖𝐷 𝑣 = Con.
𝐺𝑆
The following small-signal equivalent circuit/model is drown by using equation
1
𝑖𝐷 = 𝑔𝑚 𝑣𝐺𝑆 + 𝑣𝐷𝑆
𝑟0

Common-source NMOS transistor Small-signal equivalent circuit/model

2
In saturation region drain current for NMOSFET 𝑖𝐷 = 𝐾𝑛 𝑣𝐺𝑆 − 𝑉𝑇𝑁

At Q-point the drain current and gate to source voltage are denoted as 𝑖𝐷𝑄
and 𝑣𝐺𝑆𝑄 respectively
𝜕𝑖
𝐷𝑄
And 𝑔𝑚 = 𝜕𝑣 = 2𝐾𝑛 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁 Or, 𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄
𝐺𝑆𝑄
Similarly it can be shown that the output/drain resistance
2 −1 −1
𝑟0 = 𝐾𝑛 𝜆 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁 ≅ 𝜆𝐼𝐷𝑄

EXAMPLE 7.1

Calculate the transconductance and gate-to-source voltage of as n-channel MOSFET with

parameters 𝑉𝑇𝑁 = 1.0 V, 𝐾𝑛 = 50 mA/V2. Assume the drain current IDQ = 15 mA.

Solution: The transconductance 𝑔𝑚 = 2 ∙ 50 15 = 54.77 mA/V

The gate-to-source voltage can be found as the following relation

𝑔𝑚 = 2𝐾𝑛 𝑣𝐺𝑆𝑄 − 𝑉𝑇𝑁

𝑔 54.77
Or, 𝑣𝐺𝑆𝑄 = 2𝐾𝑚 + 𝑉𝑇𝑁 = + 1 = 1.547 V
𝑛 2×50
 Basic Common-Source Amplifier

Common-source NMOS circuit Small signal ac equivalent circuit

with voltage divider biasing

DC analysis
𝑅2
𝑅𝑇𝐻 = 𝑅1 ||𝑅2 and 𝑉𝑇𝐻 = 𝑉𝐺𝑆𝑄 = 𝑉𝐷𝐷
𝑅1 +𝑅2

2 𝑅2 2
𝐼𝐷𝑄 = 𝐾𝑛 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 = 𝐾𝑛 𝑉𝐷𝐷 − 𝑉𝑇𝑁
𝑅1 +𝑅2

−1
𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄 and 𝑟0 = 𝜆𝐼𝐷𝑄
 AC analysis

Input resistance of the circuit

𝑅𝑖 = 𝑅1 ||𝑅2

Output voltage of the circuit

𝑉𝑜 = −𝑔𝑚 𝑉𝐺𝑆 𝑟𝑜 ||𝑅𝐷

𝑅𝑖
And 𝑉𝐺𝑆 = 𝑉
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 Small signal ac equivalent circuit
𝑅𝑖
So, 𝑉𝑜 = −𝑔𝑚 𝑉 𝑟 ||𝑅
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 𝑜 𝐷

Voltage gain of the circuit

𝑉0 𝑅𝑖
𝐴𝑣 = = −𝑔𝑚 𝑟0 ||𝑅𝐷
𝑉𝑠 𝑅𝑖 + 𝑅𝑆
 Output resistance of the circuit, using KCL at node point D

𝑉𝑥 𝑉𝑥
𝐼𝑥 = +
𝑅𝐷 𝑟0
1 𝐼 1 1
Or, = 𝑉𝑥 = 𝑅 + 𝑟
𝑅0 𝑥 𝐷 0

Or, 𝑅0 = 𝑅𝐷 ԡ𝑟0

EXAMPLE 7.2

Determine the small-signal voltage gain, input and

output resistance of a common-source amplifier as
shown in Figure. The circuit parameters are, VDD = 4.5
V, RD = 4.7 KΩ, R1 = 120 KΩ, R2 = 47 KΩ and RSi = 4 KΩ.
The transistor parameters are: VTN = 0.4 V,
Kn = 0.6 mA/V2 and λ = 0.025 𝑉 −1.
Common-source NMOS circuit
with voltage divider biasing
DC Solution: The dc or quiescent gate-to-source voltage
𝑅2 47
𝑉𝐺𝑆𝑄 = 𝑉𝐷𝐷 = 4.5 = 1.266 V
𝑅1 + 𝑅2 120+47

Assume that the transistor is biased in the saturation region.

So the drain current
2
𝐼𝐷𝑄 = 𝐾𝑛 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁
2
= 0.6 1.266 − 0.4
= 0.449 mA

The drain-to-source voltage

𝑉𝐷𝑆𝑄 = 𝑉𝐷𝐷 − 𝐼𝐷𝑄 𝑅𝐷

= 4.5 − 0.449 4.7
= 2.389 V
𝑉𝐷𝑆 (sat) = 𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 = 1.266 − 0.4 = 0.866 V
It is seen that 𝑉𝐷𝑆𝑄 > 𝑉𝐷𝑆 (sat)
Or 𝑉𝐷𝑆𝑄 (2.389 V) > 𝑉𝐷𝑆 (sat) (0.866 V)
So the transistor is confirmed biased in the saturation region, as we initially assume.
Transconductance of the NMOS transistor

𝑔𝑚 = 2 ∙ 𝐾𝑛 𝐼𝐷𝑄 = 2 ∙ 0.6 0.449 = 1.038 mA/V

The drain/ output resistance of the transistor

1 1
𝑟0 = = = 89.08 kΩ
𝜆 𝐼𝐷𝑄 0.025 0.449

AC Solution:

Input resistance of the amplifier

𝑅𝑖 = 𝑅1 ||𝑅2 = 120||47 = 33.77 kΩ
Small signal ac equivalent circuit
Small signal voltage gain of the amplifier
𝑉𝑜 = −𝑔𝑚 𝑉𝑔𝑠 𝑟𝑜 ||𝑅𝐷

𝑅𝑖
𝑉𝑜 = −𝑔𝑚 𝑉 𝑟 ||𝑅
𝑅𝑖 + 𝑅𝑆𝑖 𝑠 𝑜 𝐷
𝑅𝑖 33.77
𝐴𝑣 = −𝑔𝑚 𝑟0 ||𝑅𝐷 = − 1.038 89.08||4.7 = −4.14
𝑅𝑖 +𝑅𝑆𝑖 33.77+4
Output resistance of the amplifier
𝑉𝑔𝑠 = 0 so, 𝑔𝑚 𝑉𝑔𝑠 = 0
𝑉𝑥 𝑉𝑥
𝐼𝑥 = +
𝑅𝐷 𝑟0
1 𝐼 1 1
Or, = 𝑉𝑥 = 𝑅 + 𝑟
𝑅0 𝑥 𝐷 0

Or, 𝑅0 = 𝑅𝐷 ԡ𝑟0 = 4.7ԡ89.08 = 4.46 kΩ

Common-Source Amplifier with Source Resistor

PMOS common-source Small-signal ac

circuit with source resistor equivalent circuit

DC analysis
𝑅1
𝑅𝑇𝐻 = 𝑅1 ||𝑅2 and 𝑉𝑇𝐻 = 𝑉𝐺 = 𝑉𝐷𝐷 − 𝑽+
𝑅1 + 𝑅2

The small-signal output voltage

𝑉0 = −𝑔𝑚 𝑉𝑠𝑔 𝑟0 ||𝑅𝐷
 Applying KVL for the source-gate loop
𝑉𝑖 = −𝑉𝑠𝑔 + 𝑔𝑚 𝑉𝑠𝑔 𝑅𝑆
−𝑉𝑖
Or, 𝑉𝑠𝑔 = 1+𝑔
𝑚 𝑅𝑆

From these equations small-signal voltage gain

𝑉 −𝑔 𝑅
𝐴𝑣 = 𝑉0 = 1+𝑔𝑚 𝑅𝐷
𝑖 𝑚 𝑆

The input resistance of the amplifier

𝑅𝑖 = 𝑅1 ||𝑅2
Small-signal ac
equivalent circuit
EXAMPLE 7.3
Determine the small-signal voltage gain of the circuit as shown in figure. The PMOSFET
parameters are 𝐾𝑝 = 1.0 mA/V 2 , 𝑉𝑇𝑃 = −1.5 V and λ = 0. The drain current IDQ = 1.2 mA.

Solution: Transconductance 𝑔𝑚 = 2 ∙ 𝐾𝑝 𝐼𝐷𝑄 = 2 ∙ 1.0 1.2 = 2.19 mA/V

1 1
Output resistance of the transistor 𝑟0 = λ I = 0×1.2 = ∞
DQ

−𝑔𝑚 𝑅𝐷 − 2.19 10
Small-signal voltage gain 𝐴𝑣 = = = −2.89
1+𝑔𝑚 𝑅𝑆 1+ 2.19 3
 Common-Source Amplifier with Source Bypass Capacitor

Small-signal equivalent circuit, assuming the source bypass

NMOS common-source circuits capacitor acts as a short circuit and the transistor small
with source bypass capacitor signal output resistance 𝑟0 = ∞.

Output voltage,
𝑉0 = −𝑔𝑚 𝑉𝐺𝑆 𝑅𝐷

Since 𝑉𝑖 = 𝑉𝑔𝑠 , the small signal voltage gain

𝑉0 𝑉
𝐴𝑣 = = 𝑉 0 = −𝑔𝑚 𝑅𝐷 = − 1.414 7 = − 9.9
𝑉𝑖 𝐺𝑆
 The Common-Drain (Source Follower) Amplifier

NMOS source-follower or Small-signal equivalent circuit

common-drain circuit

Input resistance of the amplifier

𝑅𝑖 = 𝑅1 ||𝑅2

Output voltage, 𝑉0 = 𝑔𝑚 𝑉𝑔𝑠 𝑅𝑆 ||𝑟0

Writing a KVL equation for input loop
𝑉𝑖𝑛 = 𝑉𝑔𝑠 + 𝑉0 = 𝑉𝑔𝑠 + 𝑔𝑚 𝑉𝑔𝑠 𝑅𝑆 ||𝑟0
𝑉𝑖𝑛
Or, 𝑉𝑔𝑠 = 1+𝑔
𝑚 𝑅𝑆 ||𝑟0

𝑅𝑖
And, 𝑉𝑖𝑛 = 𝑉
𝑅𝑖 + 𝑅𝑆𝑖 𝑖

Small signal voltage gain

Small-signal equivalent circuit
𝑉0 𝑔𝑚 𝑅𝑆 ||𝑟0 𝑅𝑖
𝐴𝑣 = =
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆 ||𝑟0 𝑅𝑖 + 𝑅𝑆𝑖

Output Resistance of the Amplifier

Using KCL at the output node

𝑉𝑥 𝑉𝑥
𝐼𝑥 + 𝑔𝑚 𝑉𝑔𝑠 = +
𝑅𝑆 𝑟0

1
Or, 𝑅0 = ቛ 𝑅𝑆 ԡ𝑟0
𝑔𝑚
 The Common-Gate Amplifier

Small-equivalent circuit, neglecting the

NMOS common-gate circuit
transistor small signal output resistance 𝑟0

Small signal voltage gain

𝑉0 𝑔𝑚 𝑅𝐷 ԡ𝑅𝐿
𝐴𝑣 = =
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆𝑖

The input and output resistance of the circuit

1
𝑅𝑖 = and 𝑅0 = 𝑅𝐷 ||𝑅𝐿
𝑔𝑚