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Syllabus
• Basic CMOS Technology:
• Self aligned CMOS process,
• N well,
• P well,
• Twin tub,
• Layout of CMOS Inverter,
• CMOS Layout and Design rules.
MOS
• A Metal-Oxide-Semiconductor (MOS) structure is
created by superimposing several layers of
conducting and insulating materials to form a
sandwich-like structure.
• These structures are manufactured using a series of
chemical processing steps involving
• Oxidation of the silicon, selective introduction of
dopants, and deposition and etching of metal wires
and contacts.
• CMOS technology provides two types of transistors
(also called devices):
an n-type transistor (nMOS) and
a p-type transistor (pMOS).
• Transistor operation is controlled by electric fields
so the devices are also called Metal Oxide
Semiconductor Field Effect Transistors (MOSFETs)
or simply FETs.
• We can view MOS transistors as electrically
controlled switches
• Voltage at gate controls path from source to drain
g=0 g=1
d d d
nMOS g OFF
ON
s s s
d d d
pMOS g OFF
ON
s s s
The four main CMOS technologies:
• N-well process
• P-well process (Similar to N-Well)
• Twin-tub process
• Silicon on insulator (Not in Syllabus)
CMOS
• Transistors are fabricated on thin silicon wafers that
serve as both a mechanical support and an
electrical common point called the substrate.
• the inverter is built on a p-type substrate.
• The pMOS transistor requires an n-type body
region, so an n-well is diffused into the substrate in
its vicinity.
CMOS Fabrication
• Lithography process similar to printing press
• On each step, different materials are deposited or
etched
• Easiest to understand by viewing both top and
cross-section of wafer in a simplified manufacturing
process
n+ diffusion
p+ diffusion
n+ n+ p+ p+
polysilicon
n well
p substrate
metal1
taps GND Y
V DD
p+ n+ n+ p+ p+ n+
n well
p substrate
p substrate
SiO2
p substrate
Photoresist
SiO2
p substrate
Photoresist
SiO2
p substrate
Photoresist
SiO2
p substrate
SiO2
p substrate
n well
n well
p substrate
Polysilicon
Thin gate oxide
n well
p substrate
Polysilicon
Polysilicon
Thin gate oxide
n well
p substrate
n well
p substrate
n+ Diffusion
n well
p substrate
n+ n+ n+
n well
p substrate
n+ n+ n+
n well
p substrate
p+ Diffusion
p+ n+ n+ p+ p+ n+
n well
p substrate
Contact
n well
p substrate
Metal
Metal
Thick field oxide
p+ n+ n+ p+ p+ n+
n well
p substrate