Memory

 Primary Memory
 Secondary Memory
 Primary Memory

 Main Memory
 On-line memory

Two Types
 RAM
 ROM
 RAM ( Random Access Memory)

 Store Temporary values.

 Volatile Memory
 ROM (Read Only Memory)

 To keep permanent information such as

boot program like BIOS.
 Nonvolatile memory
 Secondary Memory

 Off-line memory
 Mass storage device
 Data Representation

 Binary format (Combination of 0s and 1s)

 Bit - 0 or 1
 Nibble - A combination of 4 bits.
 Byte - A combination of 8 bits.
 1024 Byte - I Kilo Byte( 1 KB )
 1024 KB - 1 Mega Byte( 1 MB)
 1024 MB - 1 Giga Byte ( 1 GB)
 1024 GB - 1 Tera Byte ( 1 TB)
 1024 TB - 1 Peta Byte ( 1 PB)
 1024 PB - 1 Exa Byte(1 EB)
 Memory Access

 Reading the memory or writing into the

memory is usually called Memory Access.
 The memory consist of several locations.
 Each location is referred to by an
address.
 The address of memory location is also a
binary number.
Memory which consists of 8 locations

Memory Location Address

Data 0 000
Data 1 001
………………. 010
……………. 011
…………….. 100
…………….. 101
………….. 110
Data 7 111
 Memory Address

 If a memory has 8 location , the memory

address is a three bit number.
 If a memory has 16 location , the memory
address is a four bit number.
Reading from the memory

Read signal

Address

Memory

Data
Writing (storing) in the memory

Write signal

Address

Memory

Data
 Important Registers

 Memory Address Register (MAR)

 Memory Data Register (MDR)

MAR Memory R/W

MDR
 Reading from the memory

 The address of the location is loaded to MAR

by the processor.
 READ signal is given to memory by the
processor.
 The memory transfer the content of the
memory into MDR.
 Writing in the memory

 The address of the location is stored in the

MAR.
 The data is stored in the MDR
 The WRITE signal is given to the memory.
 RAM

 Dynamic RAM(DRAM)
 Static RAM(SRAM)
 DRAM (Dynamic Ram)

 It utilizes capacitors to store information.

 Refreshing of DRAM is required in every few
milliseconds.
 It is done by rewriting all the contents again.
 Cheaper than Static RAM.
 SRAM (Static RAM)

 No need to refresh SRAM.

 It utilizes flip-flops to store information.
 costly
SDRAM (Synchronous Dynamic
Random Access Memory)

 It has a synchronous interface, meaning

that it waits for a clock signal before
responding to control inputs and is therefore
synchronized with the computer’s system
bus.
SDRAM
 DDR SDRAM (Double Data Rate
Synchronous Dynamic Random
Access Memory)

 The interface uses double pumping.

Transferring data on both the rising and
falling edges of the clock signal.
 It is double time faster than SDR.
 DDR 1 , DDR 2 , DDR 3 are available in
market.
 DDR4 is currently being designed.
DDRAM
 ROM

 Mask ROM
 PROM
 EPROM
 EEPROM
 EAROM
 Flash Memory
 Mask ROM

 Basic ROM chip.

 Information is fabricated at the time of
manufacturing.
 PROM

 Programmable Read Only Memory

 At the time of manufacturing, the chip is made as
blank ROM chip.
 Later special PROM programmers the information
stored in the memory.
 All location contain binary 1.
 Connection is broking to store 0.
 Burning the chip.
 Also called OTP (One time Programmable) memory.
Drawback of PROM

 Once some information is stored into PROM

by “burning” the information into it, it
becomes equal to a ROM. Now the
information stored into it cannot be changed
or removed.
 EPROM

An EPROM. The small quartz window admits UV light for erasure.

 EPROM

 Erasable Programmable Read Only Memory.

 Can see a window in the middle of the chip.
 This window is used to erase the contents of
EPROM.
 Using short wave ultraviolet source.
 Can be reprogrammed.
 After programming, window need to close.
Drawback of EPROM

 In EPROM one single memory location

cannot be erased or changed, to change the
content of even a single location the entire
EPROM’s content should be erased and then
the complete EPROM should be rewritten
with the new value.
 EEPROM

 Electrically Erasable Programmable Read

Only Memory.
 The content is removed by using a higher
than normal electric voltage.
 Content can be removed without removing it
from the circuit.
Drawbacks of EEPROM

 The EEPROM can be erased and

programmed for a limited number of times
only.
 The second problem with the EEPROM is
that to change even one bit of information
stored in the EEPROM, the entire content is
to be first removed and then everything is to
be written back with the new values.
 EAROM

 Electrically Alterable Read Only Memory.

 By applying a high voltage to a particular bit
of the memory content of the location can be
changed.
 To change the content of one location the
entire content need not be erased and
rewritten as it is done in the EPROM and
EEPROM devices.
Drawback of EAROM

 Write operation is very slow.

 Flash Memory

 A new type EEPROM that can be erased and

reprogrammed using the normal operating voltage
found inside the PC called flash memory.
 The first generation of Flash ROM had the entire
chip as a single block, so the entire chip had to be
erased to reprogram it.
 Newer Flash ROMs have multiple, independently
erasable blocks in sizes from 4K to 128K bytes.
 Physical Memory Organization

 The main memory is divided into a number of

sets or banks and normally nine chips are
used per bank, 8 chips for eight bit of data
and one additional chip for the parity
information.
 The memory module is a set of RAM chip on
a single plug-in circuit board.
 Memory module Packing

 DIP
 SIPP
 SIMM
 DIMM
DIP (Dual Inline Package)
 DIP (Dual Inline Package)

 Most memory chips are packaged into small

plastic or ceramic packages called dual inline
packages or DIPs. A DIP is a rectangular
package with rows of pins running along its
two longer edges.
 Older computer systems used DIP memory
directly, either soldering it to the motherboard
or placing it in sockets that had been
soldered to the motherboard.
SIPP (Single In-line Pin Package
Modules)
 SIPP (Single In-line Pin Package
Modules)

 It consisted of a small printed circuit

board upon which were mounted a number
of memory chips. It had 30 pins along one
edge which mated with matching holes in
the motherboard of the computer.
SIMM (Single In-line Memory Module)
SIMM (Single In-line Memory Module)

 SIMMs are placed into special sockets on the

motherboard created to hold them. The
sockets are specifically designed to ensure
that once inserted, the SIMM will be held in
place tightly.
 Special metal clips on either side of the
socket snap in place when the SIMM is
inserted correctly.
 DIMM (Dual In-line Memory Module)

 The main difference between SIMMs and

DIMMs is that DIMMs have separate
electrical contacts on each side of the
module, while the contacts on SIMMs on
both sides are redundant .