Discrete Semiconductors

Basic Technical information

about Discrete Semiconductors
Introduction
 This training material contains Basic information
about Discrete Semiconductors and how they are
used.
 It is simplified for use such that a technical
background is not required for understanding.
 You will learn specifically about Types of
Discrete Semiconductors.
 Information will enable you to properly identify
and categorize types of Discrete semiconductors
based on product characteristics.
Topics Covered
1. Introduction to Semiconductors
2. Discrete Semiconductors
3. Integrated Circuits
4. Packaging
5. Glossary of Terms
6. Self-test
Course Outline
PART ONE – 2hrs
Introduction to Semiconductors
Discrete Semiconductors

PART TWO – 2 hrs

Integrated Circuits

PART THREE – 2 hrs

Packaging
Glossary of Terms
Self-test
PART ONE
 Introduction to Semiconductors

 Discrete Semiconductors
1. Introduction to Semiconductors
1.1 What are semiconductors?
1.2 How are semiconductors made?
1.3 What do semiconductors do?
1.4 Who makes semiconductors?
1.5 Who buys semiconductors?
1.6 Types of Semiconductors
1.1 What are Semiconductors?
 Materials with conductivity between conductor
and insulator.

Conductor Semiconductor Insulator

Copper Silicon Plastics
Aluminum Germanium Rubber
Gold Gallium Arsenide Ceramics
First transistor was made in 1947

First transistor made by Schockley, Brattain & Bardeen in 1947

1.2 How are semiconductors made?

Crystal Ingot Wafer

Sand
Growth Slicing Polish

Photo/ Metal/
Diffusion Doping
Etch Test

Wafer
Packaging Final Test
Saw
 1.3 What do Semiconductors do?
They perform many functions in every electronic system
Power
Transistors
Rectifiers
Logic Logic Thyristors
Zeners Zeners
Small Signal Analog IGBTs
Rectifiers Rectifiers

Sensing Isolation Decision Isolation Work

& &
Input Protection Making Protection Output

Power

Analog
Rectifiers
Power Transistors
 For Example……
I/O Protection
Voltage Supervisory NCP345 SIM/SAM Smart-card interface
NCP300/1/2/3/4/5 MC33560
NCP345 NCN6000*
MAX809/810 NCN6010*
NCN6011*

Energy Conversion
Base-band Supply
LCD Bias
MC33463 MC33466
MC34280 MC7660
MAX828/9 MC1121

RF Power Amplifier
Control & Supply,
Op. Amps
DO Voltage Regulation MC33170
Battery MC33202
ulti-Output, Inductive load
C78LC/FC/PCxx MC33263 Management MC33501
C33275/375 MC33765 MC33349
C33283 MC33761 MC33340/2
MC33762
 Applications For Semiconcuctor Products
Automotive Personal Digital Assistant Printer Control Board
ABS & Traction Control Audio DC-DC
Car radio Backlight control ESD/Transient Protection
Convenience control Interface ON/OFF Control
DC Motor Control & H-bridge LED Drivers Sensors
Engine Management Li-ion Charge control Stepping Motor Drivers
Ignition System Li-ion/Ni-MH DC-DC Converters USB Interface
LIN Transceiver Li-ion/Ni-MH LDOs
Motor Fan ON/OFF Control Settop Box
PA Control Clock Distribution
Desktop Computers USB Interface Clock Generation
Graphics Card Voltage Supervisory General Purpose Logic
Power Delivery PLL
Silver Box Power Supplies SAM/SIM Interface
USB Interface High Watt (>100W) USB Interface
Low Watt (<20W)
Digital Cellular Handset Low-Med Watt (20-100W) MP3 Player
Audio Audio
Backlight control Digital Camera Backlight control
Charger control Audio General Purpose Logic
DC-DC Converters Downstream Filtering USB LED Drivers
General Purpose Logic LCD Backlight Li-ion Charge Control
Interface LED Drivers Li-ion/Ni-MH DC-DC Conversion
LDOs Li-ion Charge Control Li-ion/Ni-MH LDOs
LED Drivers Li-ion/Ni-MH DC-DC Converters Supervisory
ON/OFFControl Supervisory USB Interface
Ringer USB Interface
SmartCard Telecom Infrastructure
USB Interface 2.5G/3G Base Station
Vibrator DSLAM
Voltage Supervisory Switch/Router
Application: Cellular Phones

Average: 10 to 70 components in the

typical cell phone
 1.4 Who makes Semiconductors?
Intel
NEC
Motorola
TI
Toshiba
Samsung
Hitachi
Philips
STM
Siemens
Fujitsu
Relative Share Position

Mitsubishi
Lucent
IBM
AMD
Matsushita
National
Sanyo
Sharp
Micron Tech
Rohm
LSI Logic
Hyundai
Sony
LG Semicon
ON Semiconductor
Analog Devices
Conexant
Atmel
HP
Oki
Xilinx
Harris
Qualcomm
Altera
ATI Tech
Cirrus Logic
Maxim
VLSI Tech
Integrated Device Tech
Fairchild

Top 40 Semiconductor suppliers in 1999

1.5 Who buys Semiconductors?
OEMs – Original equipment manufacturers. Such as IBM, Apple, Dell,
Ford, Chrysler, Nokia, Motorola etc.
Distributors – For Resale to low volume users. Eg Arrow, Avnet, etc
EMSIs – Contract Manufacturers who build equipment for the OEMs.
Eg Selectron etc.
Individuals – For personal use
Distributors
45% 45%

Typical Semiconductor Co
Revenue By Customer
46%

9%
EMSI’s
9%
OEM’s
46%
1.6 Types of Semiconductors

Discrete Semiconductors
These are devices that perform a single function such as
switching, rectification or amplification. Examples are
diodes, transistors and thyristors
Integrated Circuits
These are combination of discrete elements on a single piece
of silicon performing single or multiple functions such as
voltage regulation, synchronous rectification, storage of
information in memory, high speed switching or power
management. Examples are analog switches, logic gates,
operational amplifiers and LDO voltage regulators.
 Worldwide Semiconductor
Market
Product Breakdown (1999)
Total Semiconductors - $149.4B

Discrete&
Integrated Circuits - $130.2B Opto
$19.2B
Mixed
Analog
Digital - $108.1B Signal $22.1B
Diodes,
Rectifiers.
Transistors,
Spec Amp., etc.
Cons Interface,
$13.3B
MOS - $107.1B $5.9B etc.
$16.2B

Memory Logic Optoelectronics - $5.8B

Micro - $51.7B $23.2B Digital Bipolar - $1.0B
$32.3B
Non- Other ASIC
volatile
Memory: Microproc- Micro- Micro- Logic Gate Arrays,

DRAM ROMs
EPROM
essor - control- peri-
$10.5B
FPL Standard
cells
$27.2B ler pheral $12.7B
$20.7B
EEPROM
$14.1B $10.4B
$2.0B

Flash $4.6B SRAM $4.7B DSP $4.4B

Source: WSTS Flash $4.6B
2. Discrete Semiconductors
2.1 Diodes
2.1.1 Small signal diodes
2.1.2 Rectifiers
2.1.3 Zener
2.1.4 TVS
2.2 Transistors
2.2.1 Small Signal Bipolar Transistors
2.2.2 Bipolar Power Transistors
2.2.3 Field Effect Transistors (FET)
2.3 Mosfets
2.3.1 Mosfet Operation
2.3.2 Small Signal & Power Mosfets
2.3.3 SmartDiscrete
2.4 IGBT
2.5 Thyristors
 Common terminology
Name Symbol Simple meaning (Units)
Current I Movement of electrons. (Amperes, A)
Voltage V Potential that causes current to flow (Volts, V)
Power P Current X Voltage. Total Force applied – (Watts, W)
Resistance R Resistance to current flow. (Ohms)
2.1 Diodes
Anode (+) A diode consists of a PN junction and has
two(2) terminals, an anode(+) and a
cathode(-). Current flows in only one
direction: from anode to cathode within the
diode.

(-) (+)
Cathode (-)

An ideal diode is like a light switch in

your home. When the switch is closed,
the circuit is completed; and the light
turns on. When the switch is open, there
is no current and the light is off.
2.1 Diode Characteristics
Important diode specifications are:
(a) Reverse voltage, Vr
(b) Rated forward current, If
(c) Forward voltage drop, Vf
(d) Leakage current, Ir
Vf (e) Package style
(f) Reverse recovery time, trr

Generally, Diodes are used in waveshaping

(rectification) applications. This involves
the alteration of AC signals by passing
certain portions of the signal and blocking
the rest.
2.1.1 Small Signal Diodes
 These are diodes which are rated to handle less than 1W of Power.
Power >1W can destroy these diodes.

 There are Schottky, switching and Tuning diodes with different

characteristics which define their special functions.

 Schottky diodes have very low forward drop (Vf) and are used in high
speed switching applications.

 Switching diodes are used in general purpose switching applications

 Tuning diodes are used for FM radio, TV Tuning and high frequency
control applications
Small Signal Diode Characteristics
Schottky Switching Tuning
Diode Diode Diode

Max Power 1 1 1
Rating (W)

Special Low forward General purpose Sensitive

Characteristics drop (Vf) Capacitance-
voltage response
(High Q)

Typical use High speed General purpose FM Radio & TV

switching switching Tuning
2.1.2 Rectifiers
 These are diodes which are rated to handle very high Power. Some of these
diodes can handle up to 1000W or more.

 Schottky rectifiers handle high current and moderate voltage and can switch
very fast efficiently. Silicon Bipolar rectifiers (standard & fast recovery) can
handle high voltage and moderate current but switch slower. They can be made
to switch faster (Ultrafast and Ultrasoft) but will also have reduced conduction
efficiency.

 Rectifiers convert AC signals to DC and vice-versa by process called

rectification. They are generally used in Power supplies, high frequency
switching applications including motor speed control and for circuit protection.
Rectifier Characteristics
Rectifiers

Schottky Std Recovery Fast Ultrafast Ultrasoft

Recovery

Power Rating (W) Up to 1000 Up to 1000 Up to 1000 Up to 1000 Up to 1000

High I, High V, High V, High V, Low I High V,
Low V Low I Low I Low I

Special Low Vf & fast Moderate Fast Recovery Very Fast Very fast and
Characteristics switching Recovery speed speed (trr) Recovery controlled
(trr) speed (trr) Recovery (Qrr)

Typical Use Low Voltage General Purpose DC Power High Voltage PFC, Variable
high freq supply, High Freq speed motor
rectification Ultrasonic & rectification contol
low RF systems
2.1.3 Zener Diode
 Zener diodes are designed to have a specific reverse breakdown voltage by
careful doping of the junction

 The Zener acts as a voltage regulator by operating under reverse bias

conditions – Any voltage higher than the reverse breakdown, Vz, is
dissipated across the junction.

 The zener can recover from reverse breakdown as long as the maximum
Power rating is not exceeded.

 Low Power (1W) zeners are available in radial or axial leads while medium
(10W) and high power (20W) are usually in metal cases for attachment to
heat sinks.
2.1.4 TVS Diodes (Transient Voltage Suppressor)
 A TVS Diode limits over voltages caused by current surges and dissipates high transient
power with very short response times
(1 pico sec).

Additional important specifications are:

(a) Vcl; max protection voltage
(b) Ipp; Peak pulse current
(c) Ppp; Peak pulse power (Ipp x Vcl)
(d) Tcl; Time to avalanche
(e) Ifsm: Rated Forward pulse current

Unidirectional D.C. Current Protection

Bi-directional A.C. Current Protection
2.2 Transistors
The transistor is an arrangement of Semiconductor materials that share common
physical boundaries. In n-type silicon, impurities, called dopants are introduced
resulting in excess of electrons or negative charges. In p-type silicon the dopants
lead to a deficiency of electrons and therefore an excess of positive charge carriers
or ‘holes’. When electric potential on the ‘n’ or ‘p’ sections are properly set, current
flow can be turned ON or OFF and signals can be magnified or changed.

The Junction Transisor The Field Effect Transistor The metal-oxide FET
(Bipolar Transistor) (JFET) (Mosfet)
NPN Gate 1 Source Gate Drain
Emitter Collector
Source P Drain N N
N P N N P
P

Base Gate 2
2.2.1 Small Signal Bipolar Transistors
Small Signal Bipolar
Transistors are NPN or
PNP transistors which
have max power rating
Of 1 Watt or less.

In contrast, Bipolar
Power transistors can
handle considerably
more power.
Small Signal Bipolar Transistors-Types
General Switching BRT Darlington Radio
Purpose Frequency

Characteristic Wide range Fast switching Built-in resistor Cascade of two High Frequency
with low losses network or more operation with
transistors high Ft
connected to
increase current
gain

Typical Use Signal Amplification & Save board Power Supplies VHF/UHF signal
amplification switching space. No need where high amplification.
for external current gain is TV/Radio
resistor required
NPN Bipolar Transistor Biasing

Fwd biased Junction Reverse biased Junction

NPN Transistor Operation
 The P-type base is set between
the N-type emitter and collector
 There are two P-N junctions that
can communicate
 Base-emitter junction is forward
biased and base-collector
junction is reverse biased.
 Electrons are injected from the
emitter into the base, diffuse to
the base-collector junction and
fall down the steep hill into the
collector.
 In the base region, some of the
electrons recombine with holes in
this p-type region
Amplification in NPN Transistor
• The emitter current, (Ie) represents 100% of the
current flow in the transistor.

• Only 2-5% of the current flow is base current (Ib)

• The remaining 95-97% is collector current (Ic)

• Ie = Ib + Ic

• The amount of current leaving the emitter is only

a function of the small emitter-base bias (Vbb)

• A small change in the emitter-base bias causes

a large change in the collector current since most
of the emitter current ends up in the collector.

• This is the principle of AMPLIFICATION.

NPN Transistor – Amplification
I
Output Signal
Q-point
Ic time

Vbe

vbe

Input Signal

time

Important parameters: Current Gain or Beta, hfe = Change in Ic/Change in Ib

Transconductance, gm = Change in Ic/Change in Vbe
2.2.2 Bipolar Power Transistor
 Bipolar Power transistors differ from small
signal Bipolar transistors in that they can
handle more power.
 They are used in high power audio
amplification as high frequency drivers or
general purpose switching in regulators,
converters and power amplifiers
Small Signal vs Power Bipolar Transistor
Small Signal Power Bipolar
Bipolar transistor transistor

Ptmax (W) <1 1.25 - 300

Ic (Amp) 0.05 – 3 0.3 - 60

Vceo (Volt) 5 - 450 25 - 500

Hfe min 15 – 500 5 - 3000

Hfe max 45 - 1500 25 - 20000

Ft min (MHZ) 15 - 450 .08 - 65

 2.2.3 Field Effect Transistors
Gate 1

P
Source Drain
N
P

Gate 2
In an N-channel Junction Field Effect Transistor (JFET), current flow from the source to
drain terminals is controlled by the P-type regions which are called the ‘gate’ terminals. This
is like the valve of a water tap that can be turned ON or OFF to control the flow of water.
 JFET Operation

Drain to source Voltage (Vds) changes the resistance in the channel by reducing the channel size
(depletion) which in turn reduces the amount of current flow. As the Vds increases, it reaches a
point, where the channel is closed off and current flow stops. Gate to source voltage (Vgs)
has the same effect and so the channel can be closed from both Vds and Vgs
JFET Operation

Important Parameters:
Idss – The value of drain current, IDwhich flows when Vgs = 0v
Vp - The Pinchoff Voltage. This is the value of Vds at which increase in the Vds does not
produce an increase in ID.. When Vgs is increased, the Vp value is reached sooner as the Vgs
adds to the drain-to-source value pinching off the channel faster.

JFETs are used in audio and RF amplification and for high frequency switching functions.
JFET Parameters
Parameter Typical Values

IDSS (uA) 1000-150000

VBR(DSS) (V) 25-40

Ciss (pF) 4 – 85

Crss (pF) 1 - 15
2.3 Mosfets
Mosfets are metal-oxide semiconductor Field effect Transistors

Gate
A Mosfet is a sophisticated,
Solid-state ON/OFF switch.

Source Low Voltage, Low rdson Mosfets

P P are used extensively for
N Power management in Portable &
Battery powered products (Computers,
Printers, Cellular Phones).

They are also used in low voltage,

Drain high speed switching
applications in Power supplies,
Converters and motor controls.
2.3.1 Mosfet Operation
When the gate of the Mosfet is open by the
appropriate gate voltage, Vgs, current, ID
flows from source to drain as shown.
Gate
The Gate Voltage required to turn the
Mosfet ON is called the Threshold
Voltage (Vth).

P P Source If the threshold voltage is not reached, the

Mosfet remains in the OFF state. In this
Current Flow ID N way, a Mosfet is a simple ON/OFF switch,
just like the light switch in your house.

The amount of resistance to current flow in

the ON state is called Rds(on).
Drain The Mosfet blocks any applied drain-to-
source voltage, until the rated VBDSS
when appreciable drain-to-source current,
IDSS flows.
 2.3.2 Small Signal & Power Mosfets
Small Signal Mosfet Power Mosfet

VBDSS (Volts) 8 - 240 8 - 200

Rds(on) (mohm) 160 – 14000 4.6 - 1000

IDmax (Amps) .115 - 2 0.9 - 110

PD max (Watts) .15 – 1.5 0.4 - 300

Power Mosfet Rds(on) is a very important parameter and has been continously
reduced as the Technology has improved. This parameter determines how much
resistance exists to current flow. Low rdson is good because it minimizes the need
for expensive heat sinks.
2.3.3 SmartDiscretes
 A SmartDiscrete is a discrete device with some added intelligence.
These devices can perform additional functions including sensing of
overstress conditions and reacting to protect themselves or other
circuit elements around them.

 The smart features are built into the device during fabrication by
using simple methods to fabricate these additional elements made of
diodes, zeners and resistors.

 Examples of these features are current limiting function, thermal

shutdown, short circuit protection, overvoltage protection, automatic
restart and temperature sensing.
Self Protected Mosfet with Temperature and
Current Limit
Drain
Over voltage
Protection
RG
Gate Mosfet
Input ESD Protection

Temperature Current Current

Limit Limit Sense

Source
Integrated thermal and current limits work together to provide short circuit protection.
The devices feature an integrated Drain-to-Gate clamp that enables them to withstand high
energy in the avalanche mode. The clamp also provides additional safety margin against
unexpected voltage transient. Electrostatic Discharge (ESD) protection is provided by an
integrated Gate-to-Source clamp.
2.4 IGBT – Insulated Gate Bipolar Transistor

The structure is very similar to that of a vertically diffused MOSFET featuring a double diffusion
of a p-type region and an n-type region. An inversion layer can be formed under the gate by
applying the correct voltage to the gate contact as with a MOSFET. The main difference is the use
of a p+ substrate layer for the drain. The effect is to change this into a bipolar device as this p-type
region injects holes into the n-type drift region.
IGBT Characteristics
An IGBT combines the simple gate drive of the Mosfet with
the high current carrying capability of a bipolar transistor.

IGBTs are specially suited for high Voltage and high current
switching.
2.5 Thyristors
 A Thyristor or S.C.R. (silicon
controlled rectifier) is a device
that can supply large currents or
switch large currents ON or OFF.
Thyristors are specified by the
reverse voltage, the gate voltage
and current.

 A Thyristor acts like a diode

passing current in one direction
only.
Thyristor Operation

The thyristor acts as a diode, passing current in one direction only. The
voltage at the gate controls the flow of current between the anode and the
cathode. When a momentary positive voltage of approximately 2 volts is
applied to the gate, a large current will flow from anode to cathode even
if the voltage at the gate is removed. The thyristor can be turned off by
Interrupting the power supply. This can be done using a switch in the +ve
power supply rail or bypassing the thyristor anode to cathode with a
switch. Gate current is limited by the use of a series resistor. The thyristor
also needs a load resistor otherwise it may be damaged.
Thyristor Parameters
Parameter Typical Values

On-state Current, IT 0.8 – 25 A

Peak off-state Voltage, VDRM 30 - 800 V

Peak Surge Current, ITSM 8 - 300 A

Gate Trigger Current, IGT 0.075 – 30 mA

What you should know
 You have learnt the basic differences between
diodes, transistors, Mosfets, Igbt and Thyristors.
Consider these as the family names.
 You should be able to identify a device and
classify it correctly to its family.
 You should remember the different members
within each device family.
 You should also know some important
characteristics about each family and its members.
How to use this information
 You now have a general background to
understand the different devices in the
Semiconductor Discrete Portfolio
 You should use this material as a reference