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1. Quantum Lasers a) b) c) d) e) f) 2. 3. QL SQW L MQW L SCH L GRINSCH L QC L QD L
Single-Quantum Well Laser Multiple-Quantum Well Laser Separate Confinement Heterostructure Laser Graded-Index SCH Laser Quantum Cascade Laser Quantum Dot Laser
1. Quantum Lasers
LASER = Light Amplification by Stimulated Emission of Radiation
V>0 P p N Eel EC
EFn
hf
EFp
EV
Ehole
f C ( EV + hf ) > 1 fV ( EV )
Quantum Lasers, M. Momeni
or, alternatively,
p+ n
n+
n+
optical field
lower Ith
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P
EC
P
EV
mini bands
MQW DFB
hf
hf
hf
hf
EC
InGaAsP
hf
EV
cladding
Quantum Lasers, M. Momeni
5 nm
InGaAs InGaAsP
10 nm
50 nm
SCH region
MQW region
SCH region
cladding
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EC
EV n x
Eappl
intersubband transition:
Tunneling rate >> 3 = 1 ps and 2 = 0.3 ps << 32 > 1 ps population inversion Quantum Lasers, M. Momeni 9
QC Laser -Tailoring
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QC Laser Data
Data [15]:
Pout
[mW] 200 300 (CW) up to 1000 (PM)
[ m] 3.4 80
$$$
Material systems: GaAs based, InP based, Si / SiGe on GaSb, InAs / AlSb on GaSb
CW = continuous wave; PM = pulse mode
Applications [16]: Military and Security Commercial, Medical Free-Space Optical Communication Systems and Astronomy Gas detection based on laser spectroscopy with CW or pulsed QC DFB lasers (chemical sensors)
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QD L 2. Principle
electrons
n-cladding
p-cladding
OCL
OCL
QD
b) Limit case
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2. Summary
Quantum Lasers use the structures we have discussed so far in order to 1. optimize the properties of a simple Fabry-Perot Laser (L, R, g, ), 2. Increase efficiency ( ) 3. reduce the threshold current (Ith ) and its temperature dependency, 4. change the wavelength of the laser beam ( ), 5. achieve continuous wave (CW) operation @ RT, and 6. increase the output power (P). Fabrication: 1. 2. Metallorganic chemical vapor deposition MOCVD Molecular beam epitaxy MBE
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R&D: Blue Lasers or GaN Lasers Tunable Lasers (TL) or Tunable Diode Lasers (TDL) Vertical Cavity Surface Emitting Lasers (VCSEL) Strained heterostructure QW lasers 15
3. References (QC L)
[1] Sirtori C., Nagle J., Quantum Cascade Lasers: the quantum technology for semiconductor lasers in the mid-far-infrared. Comptes Rendus Physique, In Press, Corrected Proof, Sep. 2003 http://www.sciencedirect.com/science/article/B6X19-49FGMWM-6/2/299ee308e587b6215f4731fbe5cfd566 [2] Garciaa M., Normand E., Stanley C.R., Ironside C.N., Farmer C.D., Duxbury G., Langford N., "An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Optics Communications, In Press, Uncorrected Proof, Sep. 2003. http://www.sciencedirect.com/science/article/B6TVF-49FXMFB-3/2/607fb52178f815aca3c266c7cf670524 [3] Khler, R., Tredicucci A., Beltram F., Beere H.E., Linfield E.H., Davies A.G., Ritchie D.A., Iotti, R.C., Rossi F., "Terahertz semiconductor-heterostructure laser" letters to nature, vol. 417 no. 6885, pp. 156 159, May 2002. [4] Sirtori C., "Applied physics: Bridge for the terahertz gap." Nature news and views, vol. 417, no. 6885, pp. 132133, May 2002. [5] Beck M., Hofstetter D., Aellen T., Faist J., Oesterle U., Ilegems M., Gini E., Melchior H., Continuous wave operation of a mid-infrared semiconductor laser at room temperature. Science, vol. 295, issue 5553, pp. 301305, Jan. 2002. [6] Kosterev A.A., Tittel F.K., "Chemical Sensors Based on Quantum Cascade Lasers." IEEE Journal of Quantum Electronics, vol. 38, no. 6, , pp. 582591, June 2002. Quantum Lasers, M. Momeni 16
4. References (QD L)
[7] Asryan L.V., Luryi S., "Tunneling-Injection Quantum-Dot Laser: Ultrahigh Temperature Stability" IEEE Journal of Quantum Electronics, vol. 37, no. 7, pp. 905910, July 2001. http://www.ee.sunysb.edu/~serge/177.pdf http://www.ee.sunysb.edu/~serge/publist.pdf [8] Asryan L.V., Luryi S., Suris R.A., "Internal Efficiency of Semiconductor Lasers With a QuantumConfined Active Region." IEEE Journal of Quantum Electronics, vol. 39, no. 3, pp. 404418, March 2003. http://www.ee.sunysb.edu/~serge/191.pdf [9] Pelton M., Yamamoto Y., "Ultralow threshold laser using a single quantum dot and a microsphere cavity." Physical Review A, vol. 59, no. 3, pp. 22182241, March 1999. [10] Maximov M.V., Asryan L.V., Shernyakov Yu.M., Tsatsulnikov A.F., Kaiander I.N., Nikolaev V.V., Kovsh A.R., Mikhrin S.S., Ustinov V.M., Zhukov A.E., Alferov Zh.I., Ledenstov N.N., Bimberg D., "Gain and Threshold Characteristics of Long Wavelength Lasers Based on InAs/GaAs Quantum Dots Formed by Activated Alloy Phase Separation." IEEE Journal of Quantum Electronics, vol. 37, no. 5, pp. 676683, May 2001. [11] Luryi S., Xu J.M., Zaslavsky A., Future Trends in Microelectronics: the Nano Millennium, Wiley-IEEE Press, 2002, pp. 219230. http://www.ee.sunysb.edu/~serge/180.pdf [12] Bludau, W. Halbleiter-Optoelektronik, Mnchen, Wien: Hanser, 1995, pp. 122123, 151155, 180 187. Quantum Lasers, M. Momeni 17
History of Lasers
Welch D.F., A Brief History of High-Power Semiconductor Lasers. IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, no. 6, pp. 1470 1477, Dec. 2000.
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10.000 15.000 US $
HIGHLIGHT!
Quantum Lasers, M. Momeni 22
n E
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24.00 189.70
8.00 (for each of 50) 26.00 (for a single one) 1,795.00 2,695.00 2,195.00 9,495.00
VCSEL
Sources:
INTELITE, Inc. Thorlabs GmbH Laser Components Instrument Group Axcel Photonics, Inc.
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