IE Module-1

EL 502: Industrial Electronics/ Power Devices
UNIT-1
MUHSIN C.A.
Govt. Poly Technic, Chelari
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Industrial Electronics
MOSFET Circuit
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MOSFET Symbol Circuit
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Structure of MOSFET
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Schematic structure of MOSFET
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Working principle of MOSFET

modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated an oxide, such as silicon dioxide.
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Working principle of MOSFET
If
dielectrics
other
than
an
oxide
:>>
metalinsulator
semiconductor FET (MISFET).
Compared to the MOS capacitor, the MOSFET includes two additional terminals (source and drain), each connected to
individual highly doped regions that are separated by the body region.
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N and P channel of MOSFET
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N and P channel of MOSFET
If the MOSFET is an n-channel or nMOS FET, then the source and drain are 'n+' regions and the body is a 'p' region.
If the MOSFET is a p-channel or pMOS FET, then the source and drain are 'p+' regions and the body is a 'n' region.
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Cross section of NMOS with channel- OFF state
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Cross section of NMOS without channel- OFF state
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Basic MOSFET (n-channel)

The gate electrode is placed on top of a very thin insulating layer. There are a pair of small n-type regions just under the drain & source electrodes. If apply a +ve voltage to gate, will push away the holes inside the p-type substrate and attracts the moveable electrons in the n-type regions under the source & drain electrodes.
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Basic MOSFET (n-channel)
Increasing the +ve gate voltage pushes the ptype holes further away and enlarges the thickness of the created channel. As a result increases the amount of current which can go from source to drain this is why this kind of transistor is called an enhancement mode device.
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Cross-section and circuit symbol of an n-type MOSFET.
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An n-channel MOS transistor. The gate-oxide thickness, TOX, is approximately 100 angstroms (0.01 m). A typical transistor length, L = 2 . The bulk may be either the substrate or a well. The diodes represent pn-junctions that must be reverse-biased
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Basic MOSFET (p-channel)
These behave in a similar way, but they pass current when a -ve gate voltage creates an effective p-type channel layer under the insulator. By swapping around p-type for n-type we can make pairs of transistors whose behaviour is similar except that all the signs of the voltages and currents are reversed. Pairs of devices like this care called complimentary pairs.
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In an n-channel MOSFET, the channel is made of n-type semiconductor, so the charges free to move along the channel are negatively charged (electrons). In a p-channel device the free charges which move from end-to-end are positively charged (holes).
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Illustrates the behaviour of a typical complimentary pair of power MOSFETs made by Hitachi for use in hi-fi amplifiers.
Note that with a n-channel device we apply a +ve gate voltage to allow source-drain current, with a p-channel device we apply a -ve gate voltage.
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Structure and principle of operation where the A top view of MOSFET,

gate length, L, and gate width, W. Note that L does not equal the physical dimension of the gate, but rather the distance between the source and drain regions underneath the gate. The overlap between the gate and the source/drain region is required to ensure that the inversion layer forms a continuous conducting path between the source and drain Top view of an n-type region. MOSFET Typically this overlap is made as small as possible in order to minimize its parasitic capacitance.
Industrial Electronics 21
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MOSFET-Basic Structure
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I-V Characteristics of MOSFET
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Ideal Output Characteristics of MOSFET
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Ideal Transfer Characteristics of MOSFET
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Types of MOSFET
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Types of MOSFET
Enhancement Mode
Enhancement Mode
Depletion Mode
Depletion Mode
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Power Supply Voltage
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Threshold Voltage
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Threshold Voltage
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Gate Oxide Thickness
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Channel Profile Evolution
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MOSFET Capacitances
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MOSFET Capacitances
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Comparing with
BJT, MOSFET has..
High Switching Speed ON state Voltage Drop High input impedence Integral Reverse Diode Gate VOLTAGE to control
Insulated Gate Bipolar Transistors (IGBT)
InsulatedDraw Equivalent Circuit ? Can you Gate Bipolar Transistor (IGBT)
MOSFET STRUCTUR E This is a PNP Transistor
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Construction & Operation of IGBT

The operation of the IGBT simply can be treated as a partitioning of an N-channel MOSFET and a PNP bipolar transistor. The IGBT functions as a bipolar transistor that is supplied base current by a MOSFET.
GATE EMITTER COLLECTOR
NGATE
N+ P+
COLLECTOR
EMITTER
Structure Of IGBT
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Equivalent Circuit
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What`s a IGBT ?
IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar to the power MOSFET in operation and construction. These devices offer superior performance to the bipolar-transistors. They are core costeffective solution in high power, wide range of frequency applications
COMPARISON TABLE
ITEM SYMBOL
CONTROL PARAMETER CONTROL POWER CONTROL CIRCUIT ON-RESISTANCE SWITCHING SPEED SWITCHING LOSS CURRENT HIGH COMPLEX LOW SLOW HIGH VOLTAGE LOW SIMPLE LOW MEDIUM MEDIUM VOLTAGE LOW SIMPLE HIGH FAST LOW
T R
IGBT
MOSFET
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Absolute Maximum Rating of IBGT

Symbol BVCES BVGES ICmax ICpeak PCmax Descriptions Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited) Maximum voltage applicable between G-E Maximum DC current can flow into the collector. Indicated by radiation condition (ex: TC=25C) Maximum Peak current can flow into the collector. Indicated by current pulse width(ex:10s) and Duty-cycle(ex:below 1%), and Radiation condition. Allowable collector loss and maximum current consumption. In usual case, at the temperature of TC (ex : 25C), the thermal resistance P (max)
C
Tj(max) - TC Rjc = --------------------FBSOA
becomes and usually indicated by its upper limit.
Forward Bias Safe Operating Area It is the maximum pulse responding operation range to the voltageVce between C-E and the graph of the collector current. The characteristics of the high voltage part is deteriorated due to the thermal loss and the over concentration of current. SCSOA It is because of the phenomena called the second breakdown mode. Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to human fault then the flow of the abnormally high current would destroy the device, so the current sensing and the feedback to the control block become the necessity. Which requires the IGBT should withstand the short- circuit condition for about 3~5s. ex: If the load is short-circuited when the applied voltage between the C-E is about 300~500V, then the current upto 8-12 times higher than the rated current will flow which would destroy the device within 20~30s. Thus the protective circuit is designed to be about 10s with the consideration of the feedback delay time. 16 July 2011 Industrial Electronics
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Thermal Resistance
Symbol Descriptions
RJ-C (I)Thermal resistance between IGBT's junction to case Thermal resistance between FRD's junction to case RJ-C (F) RC-S Thermal resistance between the case of IGBT to the heat sink
Electerical Characteristics
Symbol Descriptions
Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited) BVCES The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated current (ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined. Gate(th) VGE Threshold Voltage The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex: 1mA). The minimum and the maximum value is given. Collector Cutoff Current The maximum collector current when the gate and the emitter is short-circuited and IC theESrated voltage is applied to the collector. Gate - Emitter Leakage Current The maximum gate current when the collector and the emitter is short-circuited and IG theESrated voltage is applied between the gate-emitter. 16 July 2011 Industrial Electronics 41
Symbol
Descriptions
Collector - Emitter Saturation Voltage VCE (sat) The saturation voltage between the collector and the emitter when the rated current is applied to the collector and the rate voltage is applied between the gate and the emitter. Total Gate Charge Qg The amount of the gate electric charge needed for the IGBT to be completely On. The amount of the driving current needed can be decided. Input Capacitance Cies Output Capacitance Coes Reverse Capacitance Cres Turn on Delay Time Td The time for the output to reach the 10% of the maximum of the output current waveform after the pulse is applied to the gate. Turn on Rise Time Tr The time to reach from 10% to 90% of the output current waveform. Turn on Time Ton The time for the output to reach the 90% of the maximum of the output current waveform after the pulse is applied to the gate. Turn off Falling Time Tf The time to reach from 10% to 90% of the output current waveform. Turn off Time Toff The time for the output to reach the 10% of the maximum of the output current waveform after the pulse is removed from the gate.
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IGBT Operation Area

25 KW
HIGH VOLTAGE HIGH CURRENT
10
GTO
HIGH FREQUENCY
POWER
IGBT BJT
0.1 1
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MOSFET
70 FREQUENCY
1000KHZ
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Characteristics
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Industrial Applications of IGBT

IGBT Module & Discrete
Elevator F.A. - Inverter, AC servo, Robotics Welding machine Power Supply - UPS, SMPS Transportation -Ignition control, Battery charger
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Consumer Applications of IGBT

IGBT Module & Discrete
IH-Jar (Rice Cooker)
IH-Cooker
MWO
|0
Camera Strobo Washing machine
Inverter Air-conditioner
: 3
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Examples of Application Circuit (I)

home appliance (IH-JAR, IH-Cooker, MWO..) Package Type : TO-220, TO-3P, TO-264 (SGP.., SGH..., SGL...) Current rating : 30 ~ 80A
2*IGBT DISCRETE
1*IGBT DISCRETE
SINGLE ENDED TYPE

(VCE : 900 ~ 1700V)
HALF BRIDGE TYPE

(VCE : 600V)
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Examples of Application Circuit (II)

Industrial Equipment (Welding, UPS, IH Heater) Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....) Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A
4*1-PAK IGBT MODULE 2*2-PAK IGBT MODULE
FULL BRIDGE TYPE

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Examples of Application Circuit (III)

3Phase Motor Drive.(Inverter,Frequency Converter) Package Type : 6-Pak,2-Pak,1-Pak Module(FM6G...,FM2G...,FM1G....) Current Rating : 600V : 50 ~ 600A, 1200V : 50A ~ 200A
6*Discrete CO-PAK 1*6-PAK IGBT MODULE 2*2-PAK IGBT MODULE 6*1-PAK IGBT MODULE
3PHASE BRIDGE TYPE

Examples of Application Circuit ()

DC Chopper
DC.M
DC Servo (NC, ROBOT)
From Rectifier
DC.M From Rectifier
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Low Output CVCF Inverter
CVCF Inverter (UPS)
Filter
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VVVF Inverter (PAM)
VVVF Inverter (PWM)
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Block Diagram of Inverter System

. Using the Conventional IGBT Modules
Constant Voltage & Constant Frequency
Diode Rectifier or PFC Unit DC Link Capacitors
Variable Voltage & Variable Frequency
IGBT Modules IGBT Modules

AC Motors
AC Source
Isolated Multi Sen sin g Unit Gate Drivers Power Supply for Gate Driving
Isolation Unit
Isolation Unit
CPU
Power Supply for Control
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Home Appliances Application

. Using the Conventional IPMs
Variable Voltage & Variable Frequency
Constant Voltage & Constant Frequency
IGBTs
AC Source 100 ~ 250 V
Diode Rectifier or PFC Unit
DC Link Capacitors
Gate Drivers Sen sin g Unit AC Motors
Isolation Unit
Power Supply for Control
CPU
Isolated Multi Power Supply for Gate Driving
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Welding Machine type-1

Full Bridge Topology
50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity
Voltage Current
Welding Output
PWM
To Gate
Starter
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2 IGBT Forward Topology
20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage Current
Welding Output
PWM
* Normally IGBT using by parallel connection Parallel numbers depend on output power * Need Vce(sat) matching tightly (with in 0.1V)
To Gate
Starter

Half Bridge Topology
50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity 20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage Current
Welding Output To Gate
PWM
Starter
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Un-interruptible Power Supply

Application
Personal Use 10~50A / 600V,1200V(Depend on Battery Design)(Discrete) For Group Source 50~600A / 600V,1200V(2Module,1Module)
Voutput
Ac
AC-DC Converter Output Battery Pack
Control Circuit
To IGBT Output
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Power Factor Correction

Application
20~40A/600V(Discrete) Home Appliance, Air-conditioner For Telecommunication Power and industrial power
Vout Regulated DC Output T
AC Controller
To Load
V,I P.F > 0.99
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Camera Strobe
- SCRs previously used in cameras change to IGBTs . - By using IGBTs in strobe of cameras, flash control for exact focusing and red-eye protection can be possible. - Strobe application needs low Vce(sat), high peak current capability of IGBT because of the relatively long switching period of a couple of milli-seconds. - Industry needs trench IGBT for low-voltage operating battery system from 3V source.
1 + +
A method of using SCRs

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A method of using IGBT

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Induction Heating JAR & Cooker

This single ended resonant inverter is developed for the rice cooker because of simple construction, high efficiency and low cost. IGBTSolutions
Half & Full Bridge Type Single Ended Type - SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D
Features
- Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD
AC
Current Feedback
IH -Controller
Gate Drive Circuit
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Micro Wave Oven (ZVS type)

This single ended resonant inverter is developed for food cooker because of simple construction, high efficiency and low cost. IGBTSolutions
Half & Full Bridge Type Single Ended Type - SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D
DISPLAY
Features
- Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD
AC
Input Key PAD

4 |0 0
u-Com (4-Bit)
Control Circuit & Gate Driver
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IGBT Gate Drive Solutions-1

VCC1 2
1 VCC 2
1 DRIVE IC 1
2 2 1
- Home Appliance(IH jar/cooker) - Single ended topology - General analog drive IC - Device :AN6711(Panasonic) TA8316S(Toshiba) FAN8800(FSC)
2 3
VCC2 2
- Small/Medium Power application - Bridge topology(half/full) - Photo coupler with analog drive IC - Device :HP3120 TLP250
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2 1 1 2
1 2 1 1
1 3
HVIC HIGH SIDE
HVIC
- Small power application - Bridge topology(half/full) - High voltage analog process with bootstrap circuit - Device : IR2112(IR) ?(Toshiba) Harris
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2 2
1 2 1
2 2
1
- Small Power application - Bridge topology & High side switch - High voltage analog process with bootstrap circuit - Device : IR2117(IR) ?(Toshiba) Harris
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VCC1 1 2
VCC1 1 2
DRIVE IC PROTECTION 3 1 2 1 2
DRIVE IC PROTECTION
3
VCC2 1 2
VCC2 1 2
2
DRIVE IC PROTECTION 1 2 1
DRIVE IC PROTECTION
- Medium power application - Bridge topology(half/full) - Photo coupler + analog driver with de-saturation network - Device : Photo coupler + MC33153(Motorola) FAN8800(FSC)
- Medium/High Power application - Bridge topology (half/full) - Hybrid : photo coupler + discrete driver One chip : photo coupler with analog driver - Device : One chip, HP316J(HP) Hybrid, EXB841(Fuji) M57962(Mitsubishi)
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Power Loss
= Switching Loss + Conduction Loss Switching Loss = Turn On Loss + Turn Off Loss
Ic
Vce
Vce(sat)
Leakage Current
Off Time
Turn On Time
On Time
Turn Off Time
Off Time
Conduction Loss Turn On Loss Turn Off Loss
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Switching Test of IGBT

Inductive Load
G Vge
Same D.U.T. Load -15V
Ic G
+
Rg
+ 15V - 15V
D.U.T.
Vce
-
Half Bridge Test Circuit
Waveform
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Question : What is a difference between CO-PAK and DISCRETE in IGBT? Answer :

- CO-PAK IGBT have a parallel DIODE. freewheeling current can flow through a parallel DIODE. - CO-PAK is commonly used in Bridge Topology and DISCRETE is used in Single Ended Topology. CO-PAK IGBT => IGBT + DIODE in one PACKAGE DISCRETE IGBT => Only IGBT
Application Example
Discrete IGBT CO-PAK
Transformer
-Forward SMPS -Fly-back SMPS

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-DC Motor Control
- Induction Heating
- Lamp Ballast
- Induction Motor
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Question : What is the Short Circuit Withstand Time(Tsc) ? Answer :

- IGBTs are need to be protected from over current caused by Motor destruction or fault by noise. Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time under Short circuit condition - Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc.
Control & Driver
Over Current Detect & Feedback Delay time 3~7uS SC --> Detecting abnormal condition --> (Over Vce(sat),DC line current)
Feedback
-->
Gate Turn-off (Soft Turn-off)

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Question : What is a difference between RUF and UF/XF SERIES ? Answer :

- IGBT application is mainly divided into two parts. . One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR). and the other is power conversion application(SMPS,UPS, CONVERTER). - product line-up and characteristics are as follow. Series UF/UFD XF/XFD ** NO Suffix Application SMPS(<50khz),UPS SMPS(>100khz) IH Cooker, Strobo Design key point Rugged,SC Rated High performance High Speed depend on System Characteristics Vce(sat)=2.2V,tf=120nS Vce(sat)=2.0V,tf=80nS Vce(sat)=2.5V,tf=30nS depend on Device Example SGP5N60RUFD SGP23N60UFD ????? SGL40N150D SGR15040L ** : under developing - The ordering system of IGBT Module is not classified as applications but is follows US series for convenience. But basic characteristics of Module is identified with that of Discrete IGBT RUF Series. (Rugged,SC Rated)
RUF/RUFD Motor
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Question : In place of MOSFET, IGBT can be used in power conversion application? Answer :
* IGBT can take the place of MOSFET in power conversion applications because of the same gate drive method, voltage driving. * Take care of the specific characteristic of your system before applying IGBT. * Especially, in bridge topologies, do use the CO-PAK IGBT including diode. 1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems) - RUF/RUFD : UP TO 30KHZ - UF/UFD : UP TO 70KHZ (for hard switching) - XF/XFD : UP TO 100KHZ 2) GATE DRIVE CIRCUIT - Lower gate-resistance is possible in bridge topologies than that of MOSFET because there is any limitation of gate-resistance which can destroying devices by dv/dt and di/dt. - Lower gate-resistance offers lower turn-on loss.
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Question : Whats the IGBTs Current Rating? Answer :

* Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 . * In motor applications, Fairchild IGBT offers the current value defined at the condition of Tc = 100 and in the power conversion applications, offers the value at Tc = 25 . * The current rating of Tc = 25 is about double comparing with that of Tc = 100 .
SGP40N60UF(40A at Tc=25) SGP20N60RUF(20A at Tc=100)
Same current rating
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Question : Whats Turn off Energy (Eoff) ? Answer :

* Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates and how to design the thermal management. * Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and switching frequency of systems * Eoff can provide more valuable information to designer than the turn-off falling time, tf. Ic Vce
Turn off Waveform
Turn off Power (P=V*I)
S/W Loss=on loss+off loss =(Eon+Eoff) * f
Turn off Energy (E= P(t) )

Question : How come Voltage Ratings are 600V / 1200V ? Answer :

* The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V. * For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC power source, and 2200/3300V rating for several kind of railway systems. * Industry needs 400/900/1500V rating IGBTs more and more.
1. IGBT VOLTAGE RATING ( Bridge Topology ) AC 220 --> DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V ) AC 380 --> DC (400*1.4=560V) --> ( 560*1.8 = 1008V )
2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching ) AC 220 --> DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V ) AC 110 --> DC(110*1.4=155V) --> (155*3.14 =490V) --> (490*1.5=750V )
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FAIRCHILD IGBTs Solution

We only recommend to use Fairchild IGBT to people who have used IGBT made in some where else. Thats the only how they can well the superior quality of Fairchild IGBT.
Fairchild offers...
High Performance
- Low Saturation Voltage - High Speed Switching - Low Turn-off Energy
Performance Curve
100
80
60
- Latch-Free Characteristics - Short-Circuit Immunity
Eoff [uJ/A]
High Ruggedness
1200V @ Vce=600V
40
600V @ Vce=300V
20
High Current
- Easy to Parallel Operation - Positive Temperature Coefficient
0 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Vce(sat) [V]
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Ordering Information of IGBT

Discrete
S G P 10 N 60 R UF D
Built in FRD UF : Ultra Fast S/W R : Short Circuit Rated Voltage Rating(X 10) N : N-Channel Current Rating Package Type P: TO-220 R: D-PAK S: TO-220F U: I-PAK H: TO-3P W: D2-PAK F: TO-3PF I : I2-PAK L: TO-264 Device Type G:IGBT S: SEMICONDUCTOR F: FAIRCHILD
Ordering Information of IGBT

Module
FM E 6 G 30 US 60
Voltage Rating(X 10) Die characteristics US : Ultra Fast & SC Rated Current Rating G: IGBT Circuit Type 1 : Single 2 : Half Bridge 6 : 3Phase Bridge 7 : Complex Module Type Blank : Standard Type E : Econo Type C : Complex Type FAIRCHILD Module
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IGBT Line-up
High Performance IGBT
High Performance IGBT

Symbol Vces [V] 1.2 3 7 Ic [A] @ Tc=100 13 20 40 80
600
SGR2N60UF
SGR6N60UF
SGP13N60UF
SGP23N60UF
SGP40N60UF
SGH80N60UF
SGP6N60UF
SGS13N60UF
SGS23N60UF
SGS40N60UF
600
SGR2N60UFD
SGP6N60UFD
SGP13N60UFD
SGP23N60UFD
SGH40N60UFD
SGH80N60UFD
SGL160N60UFD
SGS6N60UFD
SGS13N60UFD
SGS23N60UFD
SGF40N60UFD
SGW6N60UFD
SGW13N60UFD
SGW23N60UFD
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Rugged IGBT
Symbol Vces [V] 5 600V 10 15 Ic [A] @ Tc=100 20 25 30 50
SGP5N60RUF SGW5N60RUF
SGP10N60RUF SGW10N60RUF
SGP15N60RUF
SGP20N60RUF
SGH30N60RUF
1200V
SGH5N120RUF
SGH10N120RUF
SGH15N120RUF
SGH20N120RUF
SGH25N120RUF
600V
SGP5N60RUFD SGS5N60RUFD SGW5N60RUFD
SGP10N60RUFD SGS10N60RUFD SGW10N60RUFD
SGH15N60RUFD
SGH20N60RUFD
SGH30N60RUFD
SGL50N60RUFD
1200V
SGH5N120RUFD
SGH10N120RUFD SGH15N120RUFD SGH20N120RUFD SGL25N120RUFD
D-PAK
I-PAK
D2-PAK
I2-PAK
TO-220
TO-220F
TO-3P
TO-3PF
TO-264
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Compact / PIM Type IGBT Module

Vces [V] Ic [A] @ Tc=100 5 10
FME6G10US60
15
FME6G15US60
20
FME6G20US60
25
30
FME6G30US60
50
PKG Type
600V
Compact
FMC6G10US60 FMC7G10US60
PIM
1200V
FME6G5US120
FME6G10US120
FME6G15US120
FME6G20US120
FME6G25US120
Compact
FMC7G5US120
FMC7G10US120
FMC7G15US120
FMC7G20US120
FMC7G25US120
PIM
Molding Type IGBT Module

Vces [V] Ic [A] @ Tc=100 50
FM2G50US60
75
FM2G75US60
100
FM2G100US60
150
FM2G150US60
200
FM2G200US60
300
FM2G300US60
400
PKG Type
600V
FMBH1G50US60
FMBH1G75US60
FMBH1G100US60
FMBH1G150US60
FMBH1G200US60
FMBH1G300US60
FMBH1G400US60
FMBL1G50US60
FMBL1G75US60
FMBL1G100US60
FMBL1G200US60
FMBL1G200US60
FMBL1G300US60
FMBL1G400US60
1200V
FM2G50US120
FM2G75US120
FM2G100US120
FM2G150US120
FM2G200US120
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Camera Strobe Application

Symbol Vces [V] 400 Ic[A] pk 130
SGR15N40L (D-PAK) SGU15N40L (I-PAK)
150
SGR20N40L (D-PAK) SGU20N40L (I-PAK) FGS20N40L (8-SOP)
PKG Type
D-PAK I-PAK
Induction Heating Application

Symbol Vces [V] 900 1500 1700 Ic[A] 15
SGF15N90D (TO-3PF) SGL40N150D (TO-264) FGL60N170D (TO-264)
8 -SOP A of the Logic level Gate Drive ll
40
60
SGL60N90DG3 (TO-264)
80
PKG Type
TO-3PF
FGL80N170D (TO-264)
1500V
SGL40N150 (TO-264)
TO-264 81
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IGBT Module Packages & Equivalent Circuits
FMBL series
FME6G series
FME6G series
FME6G series
FMBH series
FMC6G series
FMC6G series FMC7G series
FMC6G series FMC7G series
FM2G series
FMC7G series
FM2G series FMBL series FMBH series
16 July 2011
82

IE Module-1

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EL 502: Industrial Electronics/ Power Devices

MOSFET Symbol Circuit

Schematic structure of MOSFET

Working principle of MOSFET

Working principle of MOSFET

semiconductor FET (MISFET).

N and P channel of MOSFET

N and P channel of MOSFET

Cross section of NMOS with channel- OFF state

Cross section of NMOS without channel- OFF state

Basic MOSFET (n-channel)

Basic MOSFET (n-channel)

Cross-section and circuit symbol of an n-type MOSFET.

Basic MOSFET (p-channel)

Structure and principle of operation where the A top view of MOSFET,

I-V Characteristics of MOSFET

Ideal Output Characteristics of MOSFET

Ideal Transfer Characteristics of MOSFET

Power Supply Voltage

Gate Oxide Thickness

Channel Profile Evolution

BJT, MOSFET has..

Insulated Gate Bipolar Transistors (IGBT)

InsulatedDraw Equivalent Circuit ? Can you Gate Bipolar Transistor (IGBT)

MOSFET STRUCTUR E This is a PNP Transistor

Construction & Operation of IGBT

Absolute Maximum Rating of IBGT

Tj(max) - TC Rjc = --------------------FBSOA

becomes and usually indicated by its upper limit.

IGBT Operation Area

HIGH VOLTAGE HIGH CURRENT

Industrial Applications of IGBT

Consumer Applications of IGBT

Camera Strobo Washing machine

Examples of Application Circuit (I)

SINGLE ENDED TYPE

HALF BRIDGE TYPE

Examples of Application Circuit (II)

FULL BRIDGE TYPE

Examples of Application Circuit (III)

3PHASE BRIDGE TYPE

Examples of Application Circuit ()

DC Servo (NC, ROBOT)

DC.M From Rectifier

Examples of Application Circuit ()

CVCF Inverter (UPS)

Examples of Application Circuit ()

VVVF Inverter (PWM)

Block Diagram of Inverter System

Variable Voltage & Variable Frequency

IGBT Modules IGBT Modules

Power Supply for Control

Home Appliances Application

Constant Voltage & Constant Frequency

AC Source 100 ~ 250 V

Diode Rectifier or PFC Unit

Gate Drivers Sen sin g Unit AC Motors

Power Supply for Control

Isolated Multi Power Supply for Gate Driving

Welding Machine type-1

Welding Machine type-2

Welding Machine type-3

Welding Output To Gate