AFM TECHNIQUES

PRESENTED BY BARUN KUMAR JHA

Non Linearity
Nonlinearity is the behavior of a circuit, particularly an amplifier, in which the output signal strength does not vary in direct proportion to the input signal strength.  In a nonlinear device, the output-to-input amplitude ratio (also called the gain) depends on the strength of the input signal.


Non Linearity

Non Linearity
Suppose the applied voltages start from zero and gradually increase to some finite value.  If the extension of the piezoelectric material is plotted as a function of the applied voltage, the plot is not a straight line, but an s-shaped curve.  The straight line in the graph is a linear fit to the data.


Non Linearity

Hysteresis


It refers to the system that exhibit path dependence or rate independent memory.

Hysteresis means lagging of an effect behind its cause. It occurs in magnetic, ferromagnetic materials as well as in elastic, electric behavior of materials in which a lag occur in application and removal of force or field.

Hysteresis Graph

Hysteresis

FIB (Focused Ion Beam)

It is a technique used particularly in the semiconductor materials.  An FIB setup uses a focused beam of ions.  The ion beam allows the milling of small holes in the sample at well localized sites, so that crosssectional images of the structure can be obtained or that modifications in the structures can be made.


Focused Ion Beam

Focused Ion Beam Technology for

Local material removal down to sub-100 nm scale  Local deposition of conducting and insulating layers in direct writing mode  Process control by high resolution secondary electron imaging.  Used in semiconductor and material science field for site specific analysis. deposition and ablation of material.


Applications of FIB
     

Cross-sectional imaging through semiconductor devices (or any layered structure) Modification of the electrical routing on semiconductor devices Preparation for physico-chemical analysis Preparation of specimens for transmission electron microscopy (TEM) Preparation of samples for Atom Probe analysis Non-semiconductor applications

Scanning Capacitance Microscopy

 

  

Scanning capacitance Microscopy is a technique for imaging of surface capacitance distribution. Measures capacitance variations between a conductive probe and semiconductor sample while scanning in contact mode Produces a 2D image. Sample prep is critical due to sensitivity of the technique. Surface must be able to withstand contact mode imaging.

SCM

Scanning Capacitance Microscopy - Implementation

SCM can function even through an insulating layer, a finite conductivity is not required to measure electrical properties  Use Contact Mode AFM System.  Use Metal Coated (Conducting) Tip  Add Capacitance Resonator Circuit  Measure Capacitance of Tip/Sample System at Frequency of Applied Bias.  Resolution of SCM is about 2 nm.  SCM require careful preparation of analyzed surface which is supposed to be almost flat.

Scanning Spreading Resistance Microscopy (SSRM)

SSRM
Scanning spreading resistance microscope is used for material characterization in terms of local resistance.  In SSRM, conductive probe is used and a bias voltage is applied to the tip and resulting current through the sample is measured.  R(x,y)= V/I


Where, R (x,y)= Resistance of sample at point (x,y) V = applied voltage I= Current

Scanning Thermal Microscopy (SThM)

Scanning Thermal Microscopy (SThM) is an advanced SPM mode intended for simultaneous obtaining nanoscale thermal and topography images.  The cantilever used in SThM is made up of two different materials which respond differently against changes in thermal conductivity of the sample and cause the cantilever to deflect.  This gives the SThM image.  Operates in contact mode AFM using specially modified silicon nitride cantilevers.


SThM.
  1.
2. 3. 4. 5. 6. 7.

SThM allows thermal measurements at the nanoscale. These measurements can include:Temperature. Thermal properties of materials. Thermal conductivity. Heat capacity. Glass transition temperature. Latent Heat. Enthalpy.

SThM..


NT-MDTs thermal probes provide better than 100 nm lateral resolution for both topography and thermal images.

At NT-MDT system, we have the possibility to scan a sample at a wide temp range of -30c to +300c

SNOM
A type of SPM.  The probe is a sharp tip of optical fiber put to the surface close enough to provide near field effects.  Fiber conduct light which is passing through a sub wave aperture, forms an image free of far field optics limitation.  Allows nano-scale object optical investigation overcoming the optics diffraction limits.


Modes of SNOM
  

Luminescence Mode Reflection Mode Transmission Mode

Transmission Mode SNOM

Reflection Mode SNOM

Luminescence Mode SNOM

Limitation of SNOM
Very low working distance and extremely shallow depth of field.  Limited to study of surfaces.  Not conducive for studying soft materials, especially under shear force mode.  Long scan times for large sample areas or high resolution imaging.


RAMAN EFFECT


Raman scattering or the Raman effect is the inelastic scattering of a photon.

It was discovered by Sir Chandrasekhar Venkata Raman.  He received the NOBEL Prize in 1930 for his work on scattering of light.  Two Type of Raman scattering:Stokes scattering Anti Stoke scattering


RAMAN SCATTERING

HOPG
 

Highly Ordered Pyrolytic Graphite.

HOPG is a pyrolytic graphite with an angular spread of the c-axes of the crystallites of less than 1 degree.  HOPG, is a relatively new form of high purity carbon and provides microscopists with a renewable and smooth surface.


Unlike mica, HOPG is completely non-polar, and for samples where elemental analysis will also be done, it provides a background with only carbon in the elemental signature.

HOPG
The modern-day material known as HOPG can be traced back to what at one time was called "Kish graphite"  Atomic-level images of HOPG can be used to calibrate the STM for high-resolution imaging.  The extreme smoothness of HOPG gives results in a featureless background, except at atomic levels of resolution.


 Can also serve as a substrate for other materials

that can be image by STM.

Force Modulation
Based on contact mode AFM.  The probe is scanned over the surface in x-y raster scan rate.  The feedback loop maintains a constant cantilever deflection, and consequently a, substantial constant force on the sample.


Force Modulation
On the stiff areas of the sample surface depth of indentation will be smaller, and on the compliant areas larger.  Tracing of the sample surface relief height is conducted by the usage of the averaged cantilever deflection in the feedback circuit.  s= (Dz/D - 1) .  By finding elasticity of sample surface one can also find modulus of elasticity.


Phase Imagining
  

A powerful extension of tapping Mode AFM. Provides nanometer scale about surface structure. Phase imaging is a powerful tools for mapping variation in sample properties at very high resolution. Oscillate the cantilever at its resonant frequency. The amplitude is used as a feedback signal.

 

Phase Imagining
The phase lag is dependent on several things, including composition, adhesion, friction and viscoelastic properties  Identify two-phase structure of polymer blends  Identify surface contaminants that are not seen in height images  Less damaging to soft samples than lateral force microscopy


Phase Imagining

Magnetic Force Microscopy

  

  

A two pass Technique. Used for analysis of magnetic properties of sample. Special probes are used for MFM. These are magnetically sensitized by sputter coating with a ferromagnetic material. The cantilever is oscillated near its resonant frequency (around 100 kHz). The tip is oscillated 10s to 100s of nm above the surface Gradients in the magnetic forces on the tip shift the resonant frequency of the cantilever .

MFM

MFM
Monitoring this shift, or related changes in oscillation amplitude or phase, produces a magnetic force image.  Many applications for data storage technology.  Two passes are made over the sample. The first measures topography while the second measures a material property (magnetic, electric, etc.)  Eliminates cross-contamination of the images.


C-AFM
C-AFM uses the probe of an AFM to contact the sample surface, and measures the current through a sample for a given applied potential. Provides current images simultaneously with topographic images. Provides I-V curves. Specially suitable to find micro shunting in solar cells. Main advantage: High spatial resolution (down to 10 nm, but highly dependent on the sample).

C-AFM

Piezo Force Microscopy

Piezo response microscopy is a SPM technique based on reverse piezo electric effect.  where a material expands (if parallel) or contracts (if anti-parallel) upon applying an electric field.  PFM measures the mechanical response when an electrical voltage is applied to the sample surface


with a conductive tip of an AFM.

 In response to the electrical stimulus, the sample

then locally expands or contracts.

PFM

Multi Pass Technique

 

  

In multi pass technique; there are two or more than two passes of scanning. During first pass surface topography is measured using either semi-contact or contact mode and subsequent passes (usually done in non contact mode) gives the additional information e.g. electrical, magnetic and other sample characteristics. EFM and MFM both are two pass Technique. MFM is a technique for imaging of magnetic field spatial distribution on the sample surface. EFM is a technique for imaging of electric fields and electric charge distribution on the sample surface

Q-Control
Q-control is a hardware, used to improve the resolution of the system by improving the Q-factor of cantilever.  The Q-Control is an add-on module for atomic force microscopes.  The electronic system adds an additional feedback circuit to AFM, giving control over the quality factor (Q) of dynamic force mode AFM.  This control enables to improve the resolution of system or increase the maximum scan speed by varying the AFM cantilever's Q factor.


Q- Control
By reducing the damping of the cantilever in a dynamic force mode AFM, the Q control increases the effective quality factor of the system.  The result is minimized forces exerted by the tip and improved resolution on sensitive surface structures.  This has been shown to resolve features that were not possible with standard tapping mode AFM.


Q-Control Application
    

Minimizing the force exerted by the probing tip on the surface. Improving the overall sensitivity in MFM or EFM. Increases the signal to noise ratio. Increase the maximum scan speed by reducing quality factor. Reducing the time constant of oscillating probe.

MAC Mode ( Magnetic AC Mode)

Agilant Technology has patented MAC Mode of AFM.  A gentle , non destructive technique for AFM.  Designed for imaging extremely delicate samples.


MAC


With MAC Mode, a magnetically coated cantilever called a MAC Lever is driven by an oscillating magnetic field. The magnetic field is applied directly to the MAC Lever from either above (Top-MAC) or below (MAC Stage) the cantilever.

Features and Benefits of MAC

Patented technique optimized or high resolution AFM imaging in fluids.  Intelligent design facilitate simple operation in air or fluid.  DSP lock in from 200-1MHz ensure true phase and amplitude.  Easy tuning provides a simple resonance peak.


MAC..
 

Wide range of operating frequency afford greater versatility. Operates simultaneously with Environment control. Temperature control. Electrochemical control. Control fluid exchange.

DNA
Deoxyribonucleic Acid  Contain the genetic instruction used in development.  DNA size radius- 1 nanometer pitch- 3.4 nanometer


DNA

DNA

Units
        

Millimeter Represented by mm. 1mm= (10)^(-3) Micro meter Represented by um 1 um= (10)^(-6) Nano meter. Represented by nm. 1 nm= (10)^(-9). A degree= (10)^-10