DEPARTMENT OF TECHNICAL EDUCATION

ANDHRA PRADESH
Name : G. Rama Krishna Rao
Designation : Lecturer
Branch : Electronics and Communication Engg.,
Institution : Govt. Polytechnic, Anantapur
Year/Semester : 1year
Subject : Electronic components& devices
Subject Code : EC-105
Topic : Semiconductor Diode
Sub Topic : V-I Characteristics
Duration : 50 minutes
Teaching Aids : Device samples.
EC105.126 1
Recap

We have been discussed the following topics

• P-N Junction Diode with Reverse bias (RB).

• Working of Diode under Reverse Bias.

EC105.126 2
OBJECTIVES

• Junction Properties.

• V-I Characteristics P-N Junction Diode.

• Forward, reverse resistance.

EC105.126 3
P-N JUNCTION

Fig 1.
EC105.126 4
JUNCTION PROPERTIES

• The junction contains immobile ions i.e. this region is

depleted of mobile charges.

• This region is called the depletion region, the space

charge region, or transition region.

• It is in the order of 1 micron width.

• The cut-in voltage is 0.3v for Ge, 0.6v for Si.

EC105.126 5
(Contd..)

5. The reverse saturation current doubles for every 10

degree Celsius rise in temperature.

6. Forward resistance is in the order ohms, the reverse

resistance is in the order mega ohms.

7. The Transition region increases with reverse bias this

region also considered as a variable capacitor and
known as Transition capacitance

EC105.126 6
V-I Characteristics of P-N Junction Diode

Fig 2.
EC105.126 7
 (Contd…)

IF(mA)
Forward bias
Breakdown voltage

VR(V) VF(V)

Cutin voltage

Reverse Bias
IR(uA) Fig 3.
EC105.126 8
EC105.126 9
Diode Current

The expression for Diode current is

V

I = I 0 (e − 1)
nVt

Where Io=Reverse Saturation current.

V=Applied Voltage.
Vt=Volt equivalent temperature=T(K)/11600.
n=1 for germanium and 2 for silicon.

EC105.126 10
 Resistance calculation

IF(mA)
Forward bias
Breakdown voltage

ΔV
If
Vr ΔI
VR(V) VF(V)
Vf
Ir Cutin voltage

Reverse Bias
IR(uA) Fig 4.
EC105.126 11
Resistance calculation

Forward Resistance
1. Dynamic resistance (rf)= ΔV/ ΔI ..ohms.

Where ΔV, ΔI are incremental voltage and current values

on Forward characteristics.

2. Static resistance (Rf)= Vf /If …ohms.

Where Vf, If are voltage and current values on Forward

characteristics.
EC105.126 12
(Contd..)

Reverse Resistance:

Static resistance = Vr /Ir …ohms

Where Vr, Ir are voltage and current values on Reverse

characteristics.

EC105.126 13
 Summary

On completion this period, you would be able to

• Understand the Junction Properties.

• Know the V-I Characteristics P-N Junction Diode.

• Calculate the Forward, reverse resistance.

EC105.126 14
 Quiz
1. The cut-in voltage for Si is……
( Ans: 0.6 v ).

2. The cut-in voltage for Ge is……

( Ans: 0.3 v ).

3. The reverse junction constitutes a …..

( Ans: a variable capacitance ).

4. The P-N junction act as a……. Device.

( Ans: non-linear ).

5. The Io doubles for every …….. rise in temperature

( Ans: 10 C ). EC105.126 15
Frequently Asked Questions

1. State the salient features of P-N junction.

2. Draw and explain the V-I characteristics of

P-N junction.

3. Explain the temperature dependence of the diode.

4. Discuss the junction capacitance effect.

EC105.126 16