Department Of Technical Education

Andhra Pradesh
Name : G Sudhakar Reddy.
Designation : Senior Lecturer.
Branch: : DECE
Institute : Government Polytechnic Narsipatnam.
Year/Semester : III semester.
Subject : ELECTRONICS CIRCUITS-I.
Subject Code : EC-302.
Topic : FET&UJT.
DURATION : 50 MIN
SUB TOPIC : INTRODUCTION OF MOSFET

TEACHING AIDS :ANIMATION & PHOTOGRAPHS

EC302.34 1
RECAP

All ready we discussed about the

• symbols of FET.

• Advantages of FET over BJT.

• Disadvantages of FET over BJT.

• Applications of JFET.

EC302.34 2
OBJECTIVES

On completion of this period you would be able to know

• The terminals of MOSFETs

• Classification of MOSFETs

EC302.34 3
DO YOU KNOW

JFET N CHANNEL P CHANNEL

JFET JFET

EC302.34 4
Classification of MOSFETs

MOSFET

Depletion type Enhancement type

p-channel N-channel
p-channel N-channel

EC302.34 5
 Metal oxide semiconductor field effect
transistor (MOSFET)
Drain • MOSFET is an important
semiconductor device and is
widely used in many circuit
Oxide application.
layer
Substrate
p • The input impedance of a
MOSFET is much more than
Gate that if a FET because of very
small leakage current.
• MOSFETs has much greater
Source commercial Importance
than JFET
N Channel EC302.34 6
 MOSFET (contd)

Drain •The MOSFET can be used

in any of the circuits covered
for the FET.
Oxide
layer
Substrate •Therefore all the equations
p
apply equally well to the
Gate MOSFET and FET in
amplifier connections.

Source
N Channel
EC302.34 7
 MOSFET (contd)

Drain

•MOSFETs uses a metal

Oxide gate electrode (instead of
layer p-n junction in JFET),
Substrate separated from the semi
p
conductor by an Insulating
Gate thin layer sio2 to modulate
the resistance of the
conduction channel.

Source
N Channel
EC302.34 8
 MOSFET (contd)

Drain
• It is also called as
insulated gate FET (IGFET)
Oxide
layer
Substrate •MOSFETs operates both
p in the depletion mode as well
as an the enhancement
Gate mode

Source
N Channel
EC302.34 9
CIRCUIT SYMBOLS OF MOSFET

D
D

G
G
S S

N channel P channel

EC302.34 10
 Differences between MOSFET and FET

• There is only a single p-region. This is called substrate.

• A thin layer of metal oxide is deposited over the left side of

the channel. A metallic gate is deposited over the oxide layer.
As silicon dioxide is an insulator, therefore a gate is insulated
from the channel. For this reason MOSFET is some times
called insulated gate FET.

EC302.34 11
SUMMARY
• MOSFET stands for

Metal Oxide Semiconductor Field Effect Transistor

• In MOSFETs the gate is insulated from channel .

• MOSFETs operates both in the depletion mode as well as in

the enhancement mode.

EC302.34 12
QUIZ

1. Which statement about MOSFETs is false

(c) Depletion mode only.

(e) Enhancement mode only

(g) Both of above

(i) None of the above

EC302.34 13
1. IGFET is a
(a)Square law device

(c)Half power law device

(e)3/2 power law device

(g)Linear device

EC302.34 14
Frequently asked question

1. What is meant by MOSFETs ?

3. List the types MOSFETs ?

5. What are the modifications in FET to make

MOSFET?

EC302.34 15