DEPARTMENT OF TECHNICAL

EDUCATION,A.P.
Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code : EE-305
Topic : Special devices(4/6)
Duration : 50Mts.
Sub Topic : Classifications & construction of FET
Teaching Aids : Diagrams

EE-305.45
 Recap

• Already we discussed about the SCR construction and

working.

• SCR two transistor analogy circuit.

EE-305.45 2
 Objectives

Upon completion of this period the student will be

able to know

• Classification of FETs

• Construction

EE-305.45 3
 Do you know

• The working principle of Bipolar junction transistor.

• The factors effecting the output current of BJT.

• The differences between majority carriers and minority

carriers.

EE-305.45 4
 (FIELD EFFECT TRANSISTOR)

FET

JFET MOSFET

n-channel p-channel Depletion type Enhancement type

p-channel n-channel p-channel n-channel

EE-305.45 5
 Drain(D)
n
• Let us consider n channel
p p
FET.
Gate(G)
•It consists of an N- type semi
n conductor bar sandwiched between
two heavily doped P-type regions.
Source(S)

N-Channel EE-305.45 6
 Drain(D)
n
•ohmic contacts are made at the
two ends of N-channel bar.
p p
Gate(G) •This N-type bar termed as a
n channel

Source(S)

N-Channel EE-305.45 7
 Drain(D)

n •In this channel current flowing

from one end to another end.

p p •Application of voltage between two

Gate(G)
ends.

n •It has three terminals

• source, drain and gate.
Source(S)

N-Channel EE-305.45 8
• SOURCE :It is the terminal from
which the majority carriers enter
the bar. D

G
• DRAIN : It is the terminal from which
the majority carriers leave
the bar. S
SYMBOL
• GATE: The two sides of a N-type bar
contains heavily doped P-region
called gate.
EE-305.45 9
 D
• The gate and channel form a
P-N junction. G

• Circuit Symbols: Arrow S

indicates direction of current
flowing. SYMBOL

EE-305.45 10
BASIC CONSTRUCTION OF FET

+Vdd

Vgg

EE-305.45 11
CONSTRUCTION OF JFETF

EE-305.45 12
 Construction of FET
.

• Let us consider n channel FET

• It consists of an N- type semi

conductor bar sandwiched
between two heavily doped P-
type regions.

• Ohmic contacts are made at

the two ends of N-channel
bar.

• This N-type bar termed asEE-305.45

a 13
channel
 Junction field effect transistor

• CIRCUIT SYMBOL

• N CHANNEL FET

EE-305.45 14
 TAP ANALOGUS TO FET
.

EE-305.45 15
 •Let us consider p channel FET .
Drain(D)
P •It consists of a p- type semi
conductor bar sandwiched between
two heavily doped n-type regions.
N N
Gate(G) •Ohmic contacts are made at the
P two ends of p-channel bar.

• This p-type bar termed as a

Source(S)
channel.
P-Channel EE-305.45 16
 Drain(D)
•In this channel current
P
flowing from one end to
another end on application of
voltage between two ends.
N N
Gate(G) •It has three terminals source,
P drain and gate.

Source(S)

P-Channel EE-305.45 17
 SUMMARY

• We have discussed about

• Classification of FETS

• Construction of FET

EE-305.45 18
 Quiz

1) In the field effect transistors conduction

carriers are

• Electrons

• Holes

• Either electrons or holes

• None of the above

EE-305.45 19
 Quiz

• The Field effect transistor is a

(c) Bipolar device

(e) Passive device

(g) Unipolar device

(i) None

EE-305.45 20
 Frequently asked questions

2. Draw the layer diagram of JFET?

2. Explain the constructional details of JFET?

3. List various types of FET s available?

EE-305.45 21