Nano-electronics

Nanoelectronics?


Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Nanoelectronics often refer to transistor devices

Carbon nanotubes:
Structure:  Carbon nanotubes are extremely thin (their diameter is about 10,000 times smaller than a human hair), hollow cylinders made of carbon atoms.
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Carbon nanotubes:
  

Nanotubes, depending on their structure, can be metals or semiconductors. They are also extremely strong materials and have good thermal conductivity. The above characteristics have generated strong interest in their possible use in nanoelectronic and nano-mechanical devices. For example, they can be used as nano-wires or as active components in electronic devices such as the field-effect transistor
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WHY SHOULD WE GO FOR NANOELCTRONICS?



It promises the devices that will provide significant cost advantages as well as performance ,increases in speed, less power consumption, more sensitive and device density Enables new classes of devices and functionality
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Involves :
Nano-circuitry  Nano-electronic devices  Nano-manipulation  Nano-fabrication  Present scenario  Future challenges


NANO-CIRCUITRY:
   

MOORES LAW: The more transistors one can fit on a circuit, the faster the computer will be The first aspect of organization begins with transistors which are produced at nanoscale second aspect of nanocircuit is its interconnection. In nanocircuits, nanotubes and other wires as narrow as one nanometer are used to link transistors together transistors and nanowires are already pre-wired

Nanoelectronics Approaches:

A) Diodes and transistors based on metal and semiconductor nanowires; B) Carbon nanotube transistors; C) FETs based small organic molecules; D) Large biomolecules as digital storage elements

Nanotube field-effect transistor:



Transistors are the basic building blocks of integrated circuits. To use nanotubes in future circuits it is essential to be able to make transistors from them. We have fabricated and tested nanotube transistors using individual multi-wall or single-wall nanotubes as the channel of a field-effect transistor (FET).
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EXTERNAL STRUCTURE OF FET USING NANO TUBE:

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REPRESENTATION OF FET:

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MEASUREMENT OF THE ELECTRICAL CHARACTERISTICS:



We can measure the electrical characteristics of our nanotube-FETs and find that we can change the amount of current flowing through the nanotube channel by a factor of 100,000 by changing the voltage applied to a gate (VG), as can be seen in our data below. G is the low bias conductance of the tube.
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GRAPH:

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NANODEVICES:
 1)

2)

Divided into Solid-state quantum-effect nanoelectronic device, Molecular electronic devices

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Solid-state quantum-effect nanoelectronic device:

  

Is alternative to increase speed and density of information processing Smaller the size speed will be more produce ultra-fast, low power integrated circuits with as many as 100 billion or even 1 trillion switching devices on a single CPU chip "island composed of semiconductor or metal in which electrons may be confined, which is the essential structural feature in all these quantumeffect, solid-state nanoelectronic devices. Island is similar to channel in FET
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SOLID STATE NANODEVICES

Quantum Dots (QDs)

Resonant Tunneling Devices

Single-Electron Transistors (SETs)

Resonant tunneling Diodes (RTDs)

Resonant Tunneling Transistors (RTTs)

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Quantum Dots:

Single quantum dot and ordered arrays of quantum dots as active optoelectronic device elements
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Single-Electron Transistors (SETs)



As we cool the FET down from room temperature to 4 degree Kelvin (minus 460 degree Fahrenheit) we see the device behavior change dramatically. While the device acts like a field-effect transistor at room temperature, at 4K it behaves like a single-electron transistor (SET).

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RESONANT TUNNELING DIODES:



Is made by placing two insulating barriers in a semiconductor, creating between them an island or potential well where electrons can reside. center islands are ~10 nanometers in width This confinement makes electron to tunnel through the barriers
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OPERATION:
 

 

If voltage increases, electron tunnels through the islands Diode will be switched on ,if electron is in resonance with any one energy level in the island If voltage increased further, diode will be switched OFF, If still increased resonance once again happens and diode is switched on

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RESONANT TUNNELING DIODES:

Advantages: Multi-state switching behavior permits each device to "count higher"  represent more logic states.


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RESONANT TUNNELING TRANSISTOR:

By adding a small gate electrode over the island of an RTD one may construct a resonant tunneling transistor  a small gate voltage can control a large current across the device  RTT can perform as both switch and amplifier  RTTs can have several switching states

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MOLECULAR ELECTRONIC DEVICES:

 Molecular

electronics-uses individual covalently bonded molecules to act as wires and switching devices
molecular switching devices could be as small as 1.5 nanometers.

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MOLECULAR ELECTRONIC DEVICES:

Advantage:


molecular electronics is that molecules are naturally nanometer-scale structures which makes nanometer-scale devices possible. individual molecules can conduct electrical current to function as wires and that they also can act as switches to turn the current on and off
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Nanotube manipulation:


In order to make devices out of nanotubes, it is important to be able to manipulate the nanotubes in a controlled way. We have developed the capability of changing a nanotube's position, shape and orientation, as well as cutting it. To accomplish this, we use an atomic force microscope (AFM).
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Nanotube manipulation:
The AFM is first used in "non-contact mode to obtain an image of the nanotube by scanning the AFM tip, shown in red in the schematic on the left, just above the surface. The AFM tip is then brought down to the surface and is used like a tiny plow to move the nanotube. Because of the strong interaction between the nanotube and the surface via van der Waals forces, the bent Nanotube stays where it has been placed and maintains its shape, rather than snapping back to its preferred straight configuration.

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Nanotube manipulation:


Below is a series of AFM images illustrating the stepwise positioning of a nanotube across an insulating barrier so as to be able to pass current through it. A single nanotube (in red) originally on an insulating substrate (SiO2, shown in green) is manipulated in a number of steps onto a tungsten film thin wire (in blue), and finally is streched across an insulating tungsten oxide barrier (in yellow).

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ManMov.mpeg
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NANOFABRICATION:
Present techniques for nanoscale fabrication are: LITHOGRAPHY:  This technique uses a beam of light to form a pattern on a surface which is then refined or developed into a structure using chemical process MOLECULAR BEAM EPITAXYL:  This technique uses a precision beam of atoms or molecules to deposit a structure on a surface layer by layer

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New techniques for Nano-fabrication

MECHANO-SYNTHESIS:

 Its a fabrication atom by atom or molecule by molecule using small mechanical system to control the chemical reaction at specific sites.

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CHEMO-SYNTHESIS:
This technique takes the advantage that, due to the speed of the chemical reaction the interaction between atoms or molecule make nano-structures.  Large scale production is possible in this method.


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OTHER TYPES OF FABRICATION:

Layer deposition  Mask, resolution improvement  Nano-imprint  Various CMOS steps


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Nanoelectronics applications:
Memory devices & logic devices  passive optical components (POCs)  optoelectronic components (OECs)  field emission devices (FEDs) & flat panel displays (FPDs)  light-emitting diodes (LEDs)  chemical and biosensors

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Time-To-Market
Logic Memory LEDs/OECs POCs Chemical & Biosensors FEDs/FPDs
2001 2003 2005 2007 2009 2011

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Development Activities:
          

International Business Machine (IBM) Hewlett Packard (HP) Motorola Nanoelectronic Chip Fabrication Companies Nanoelectronic Memory Chip Companies Nanoelectronic Display Companies Nanoelectronics Optoelectronic Companies Nanotech Industry Associations National Nanotechnology Initiative (NNI) Nano Science & Technology Institute (NSTI) Nano Business Alliance
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PRESENT SCENARIO:
Micro electronics. At present in which we are working  Intel i7 processor is using transistors which are about 65nm  This doesnt falls under nano category since nano-transistors are at ~10nm


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FUTURE CHALLENGES:
    

Without the proper tools it is doubtful that a theoretically well structure could be fabricated well efficient and reliable structure is questioning one Working temperature is also one of the main problem capability to built logic structure at large scale is not available yet no attention is provided for large scale production
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THANK YOU

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